MBRF2060CT SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency switching power supplies, free wheeling diodes and polarity protection diodes. Features • • • • • • • • • • Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop Matched Dual Die Construction High Junction Temperature Capability High dv/dt Capability Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection Epoxy Meets UL 94 V−0 @ 0.125 in Electrically Isolated. No Isolation Hardware Required. Pb−Free Package is Available* Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.9 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal www.kersemi.com SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 60 VOLTS 1 2 3 ISOLATED TO−220 CASE 221D STYLE 3 1 2 3 MARKING DIAGRAM Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds AYWW B2060G AKA A Y WW B2060 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Polarity Designator ORDERING INFORMATION Device 1 Package Shipping MBRF2060CT TO−220FP 50 Units/Rail MBRF2060CTG TO−220FP (Pb−Free) 50 Units/Rail MBRF2060CT MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 60 V IF(AV) 10 20 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz), TC = 133°C IFRM 20 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 0.5 A TJ, Tstg − 65 to +175 °C dv/dt 10000 V/ms Viso1 4500 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR), TC = 133°C Total Device Operating Junction and Storage Temperature Range (Note 1) Voltage Rate of Change (Rated VR) RMS Isolation Voltage (t = 0.3 second, R.H. ≤ 30%, TA = 25°C) (Note 2) Per Figure 3 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS (Per Leg) Rating Maximum Thermal Resistance, Junction−to−Case Lead Temperature for Soldering Purposes: 1/8 in from Case for 5 Seconds Symbol Value Unit RqJC 4.0 °C/W TL 260 °C Symbol Max Unit ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Maximum Instantaneous Forward Voltage (Note 3) (iF = 10 Amp, TC = 25°C) (iF = 10 Amp, TC = 125°C) (iF = 20 Amp, TC = 25°C) (iF = 20 Amp, TC = 125°C) vF Maximum Instantaneous Reverse Current (Note 3) (Rated DC Voltage, TC = 25°C) (Rated DC Voltage, TC = 125°C) iR V 0.85 0.75 0.95 0.85 mA 0.15 150 50 TJ = 150°C 150°C 20 I R, REVERSE CURRENT (mA) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. 2. Proper strike and creepage distance must be provided. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0% 100°C 10 5.0 TJ = 25°C 3.0 1.0 10 TJ = 125°C TJ = 100°C 1.0 0.1 0.01 0.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 vF, INSTANTANEOUS VOLTAGE (VOLTS) 0.9 1.0 TJ = 25°C 0 Figure 1. Typical Forward Voltage Per Diode 20 40 60 80 100 VR, REVERSE VOLTAGE (VOLTS) 120 Figure 2. Typical Reverse Current Per Diode www.kersemi.com 2 MBRF2060CT TEST CONDITION FOR ISOLATION TEST* FULLY ISOLATED PACKAGE LEADS HEATSINK 0.110, MIN Figure 3. Mounting Position *Measurement made between leads and heatsink with all leads shorted together. MOUNTING INFORMATION CLIP HEATSIN K Clip−Mounted Figure 4. Typical Mounting Technique www.kersemi.com 3 MBRF2060CT PACKAGE DIMENSIONS TO−220 FULLPAK CASE 221D−03 ISSUE K −T− −B− F SEATING PLANE C S Q U A 1 2 3 H −Y− K G N L D J R 3 PL 0.25 (0.010) M B M Y NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE http://onsemi.com www.kersemi.com 4 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88