IRF IRF8852TRPBF ultra low on-resistance Datasheet

PD - 96246
IRF8852PbF
l
l
l
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HEXFET® Power MOSFET
Ultra Low On-Resistance
Dual N-Channel MOSFET
Very Small SOIC Package
Low Profile (< 1.1mm)
Available in Tape & Reel
Lead-Free
VDSS
RDS(on) max
11.3m @VGS = 10V
15.4m @VGS = 4.5V
:
:
25V
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that
International Rectifier is well known for, provides the
designer with an extremely efficient and reliable
device for battery and load management.
'
6
6
*
'
6
6
*
Id
7.8A
6.2A
TSSOP-8
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space is
at a premium. The low profile (<1.2mm) allows it to fit easily
into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Max.
Units
25
V
Drain-to-Source Voltage
Continuous Drain Current, VGS @ 10V
7.8
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
62.4
6.2
c
PD @TA = 70°C
f
Power Dissipation f
VGS
Linear Derating Factor
Gate-to-Source Voltage
0.01
± 20
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
PD @TA = 25°C
Power Dissipation
A
1.0
W
0.64
W/°C
V
°C
Thermal Resistance
Parameter
RθJL
Junction-to-Drain Lead
RθJA
Junction-to-Ambient
Notes  through
f
g
Typ.
Max.
–––
53
–––
125
Units
°C/W
are on page 10
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
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1
07/30/09
IRF8852PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
∆ΒVDSS/∆TJ
Min. Typ. Max. Units
25
–––
–––
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
0.02
9.2
–––
11.3
VGS(th)
Gate Threshold Voltage
–––
1.35
12.5
1.8
15.4
2.35
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
1.0
150
µA
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 70°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
–––
–––
100
-100
nA
VGS = 20V
VGS = -20V
gfs
Qg
Forward Transconductance
Total Gate Charge
19
–––
–––
9.5
–––
–––
S
nC
VDS = 10V, ID = 7.8A
ID = 7.8A,VDS= 13V, VGS = 4.5V
Qg
Qgs
Total Gate Charge
Gate-to-Source Charge
–––
–––
17.4
3.1
26.1
–––
nC
ID = 7.8A
VDS = 13V
Qgd
RG
Gate-to-Drain Charge
Gate Resistance
–––
–––
2.9
2.8
–––
–––
Ω
td(on)
tr
Turn-On Delay Time
Rise Time
–––
–––
11.4
10.9
–––
–––
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
70.8
28.9
–––
–––
Ciss
Coss
Input Capacitance
Output Capacitance
–––
–––
1151
295
–––
–––
Crss
Reverse Transfer Capacitance
–––
134
–––
RDS(on)
V
Conditions
Drain-to-Source Breakdown Voltage
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 7.8A
mΩ
VGS = 4.5V, ID = 6.2A
V VDS = VGS, ID = 25µA
e
e
VGS = 10V
ns
pF
VDD = 13V, VGS = 10V
ID = 1.0A
e
RD =13 Ω
RG =30 Ω
VGS = 0V
VDS = 20V
ƒ = 1.0MHz
Avalanche Characteristics
EAS
Parameter
Single Pulse Avalanche Energy
IAR
Avalanche Current
c
d
Typ.
–––
Max.
6.5
Units
mJ
–––
7.8
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
–––
–––
62.4
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
1.0
V
trr
Reverse Recovery Time
–––
32
48
ns
Qrr
Reverse Recovery Charge
–––
17
26
nC
2
c
–––
–––
Conditions
MOSFET symbol
1.3
A
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 1.3A, VGS = 0V
TJ = 25°C, IF = 1.3A, VDD = 20V
di/dt = 100A/µs
e
e
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IRF8852PbF
1000
1000
100
BOTTOM
10
VGS
10V
8.0V
6.0V
4.5V
3.5V
3.0V
2.7V
2.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
100
1
0.1
2.5V
BOTTOM
10
2.5V
1
≤60µs PULSE WIDTH
Tj = 25°C
≤60µs PULSE WIDTH
0.01
Tj = 150°C
0.1
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1.6
RDS(on) , Drain-to-Source On Resistance
(Normalized)
100
ID, Drain-to-Source Current (A)
VGS
10V
8.0V
6.0V
4.5V
3.5V
3.0V
2.7V
2.5V
T J = 150°C
10
T J = 25°C
1
VDS = 15V
≤60µs PULSE WIDTH
1.4
ID = 7.8A
VGS = 10V
1.2
1.0
0.8
0.6
0.1
1
2
3
4
5
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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6
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3
IRF8852PbF
10000
14.0
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C, Capacitance (pF)
C oss = C ds + C gd
Ciss
1000
Coss
Crss
100
ID= 7.8A
12.0
VDS= 20V
VDS= 13V
10.0
8.0
6.0
4.0
2.0
10
0.0
1
10
100
0
VDS, Drain-to-Source Voltage (V)
12
16
20
24
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
100
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
8
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
10
TJ = 150°C
1
T = 25°C
J
100µsec
10
1msec
1
0.1
10msec
T A = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.1
0.0
0.6
1.2
1.8
2.4
3.0
3.6
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
4
4.2
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF8852PbF
RDS(on), Drain-to -Source On Resistance (m Ω)
9
8
ID, Drain Current (A)
7
6
5
4
3
2
1
0
25
50
75
100
125
25
ID = 7.8A
20
T J = 125°C
15
T J = 25°C
10
5
2
150
T A , Ambient Temperature (°C)
4
6
8
10
VGS, Gate -to -Source Voltage (V)
Fig 9. Maximum Drain Current vs.
Ambient Temperature
Fig 10. Typical On-Resistance Vs.
Gate Voltage
Thermal Response ( Z thJA ) °C/W
1000
100
D = 0.50
0.20
0.10
0.05
10
Ri (°C/W)
0.02
0.01
1
0.1
2.65337
1E-005
0.0001
18.2380
0.027128
74.5829
0.64107
29.5446
11.11
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
τi (sec)
0.00011
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
2.5
18
VGS(th) , Gate Threshold Voltage (V)
RDS(on), Drain-to -Source On Resistance ( mΩ)
IRF8852PbF
16
Vgs = 4.5V
14
12
Vgs = 10V
10
2.0
ID = 250µA
1.5
ID = 25µA
1.0
0.5
8
0
10
20
30
40
50
60
-75 -50 -25
70
50
75 100 125 150
45
30
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Typical Threshold Voltage
vs. Junction Temperature
35
30
Power (W)
25
Fig 12. Typical On-Resistance vs.
Drain Current
40
25
20
15
10
5
0
0.001
ID
TOP
2.7A
3.2A
BOTTOM 7.8A
25
20
15
10
5
0
0.01
0.10
1
10
Time (sec)
Fig 14. Typical Power Vs. Time
6
0
TJ , Temperature ( °C )
ID, Drain Current (A)
100
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy
vs. Drain Current
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IRF8852PbF
V(BR)DSS
15V
tp
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
A
0.01Ω
tp
I AS
Fig 16a. Unclamped Inductive Test Circuit
Id
Fig 16b. Unclamped Inductive Waveforms
Vds
Vgs
L
Vgs(th)
Qgodr
Qgd
1K
20K
V GS
RG
S
Qgs2 Qgs1
Fig 17. Gate Charge Test Circuit
Fig 17. Gate Charge Waveform
V DS
VCC
DUT
0
RD
VDS
90%
D.U.T.
+
- V DD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
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10%
VGS
td(on)
tr
td(off) tf
Fig 18b. Switching Time Waveforms
7
IRF8852PbF
TSSOP8 Package Outline
Dimensions are shown in milimeters (inches)
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRF8852PbF
TSSOP8 Part Marking Information
(;$03/( 7+,6,6$1,5)3%)
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TSSOP-8 Tape and Reel Information
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
IRF8852PbF
Orderable part number
Package Type
IRF8852TRPbF
TSSOP-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Note
Qualification Information†
Qualification level
Moisture Sensitivity Level
Consumer
†††
(per JEDEC JESD47F
†††
guidelines)
MSL1
TSSOP-8
(per JEDEC J-STD-020D
†††
)
Yes
RoHS Compliant
†
††
††
Qualification standards can be found at International Rectifier’s web site http://ww.irf.com
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 0.214mH, RG = 25Ω, IAS = 7.8A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board.
Rθ is measured at TJ of approximately 90°C.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/2009
10
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