TM Ultra FRFET FDB12N50U tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS(on) = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( Typ. 21nC) • Low Crss ( Typ. 11pF) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant D D G S G D2-PAK TO-263AB S FDB Series MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current -Continuous (TC = 25oC) Units V ±30 V 10 -Continuous (TC = 100oC) - Pulsed Ratings 500 A 6 IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 10 A EAR Repetitive Avalanche Energy (Note 1) 16.5 mJ dv/dt Peak Diode Recovery dv/dt 4.5 V/ns 40 A (Note 2) 456 mJ (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL (Note 1) - Derate above 25oC 165 W 1.33 W/oC -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter Ratings RθJC Thermal Resistance, Junction to Case 0.75 RθJA Thermal Resistance, Junction to Ambient 62.5 ©2007 Fairchild Semiconductor Corporation FDB12N50U Rev. A2 1 Units o C/W www.fairchildsemi.com FDB12N50U N-Channel MOSFET March 2008 Device Marking FDB12N50U Device FDB12N50UTM_WS Package D2-PAK Reel Size 330mm Tape Width 24mm Quantity 800 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units ID = 250µA, VGS = 0V, TJ = 25oC 500 - - V ID = 250µA, Referenced to 25oC - 0.7 - V/oC VDS = 500V, VGS = 0V Off Characteristics BVDSS ∆BVDSS ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current - - 25 VDS = 400V, TC = 125oC - - 250 VGS = ±30V, VDS = 0V - - ±100 3.0 - 5.0 V - 0.65 0.8 Ω - 11 - S - 1050 1395 pF - 140 190 pF - 11 17 pF - 21 30 nC - 6 - nC - 9 - nC µA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250µA Static Drain to Source On Resistance VGS = 10V, ID = 5A gFS Forward Transconductance VDS = 40V, ID = 5A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 400V, ID = 10A VGS = 10V (Note 4, 5) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 250V, ID = 10A RG = 25Ω (Note 4, 5) - 35 80 ns - 45 100 ns - 60 130 ns - 35 80 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 10 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 40 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 12A - - 1.6 V trr Reverse Recovery Time - 60 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 12A dIF/dt = 100A/µs - 0.1 - µC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 9mH, IAS = 10A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 10A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDB12N50U Rev. A2 2 www.fairchildsemi.com FDB12N50U N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 1. On-Region Characteristics VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 Figure 2. Transfer Characteristics 30 ID,Drain Current[A] ID,Drain Current[A] 30 10 o 150 C o 25 C *Notes: 1. 250µs Pulse Test *Notes: 1. VDS = 20V 2. 250µs Pulse Test o 1 2. TC = 25 C 1 10 VDS,Drain-Source Voltage[V] 1 4.0 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 7.0 100 1.2 IS, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 5.0 5.5 6.0 6.5 VGS,Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 1.4 1.0 VGS = 10V VGS = 20V 0.8 0.6 o 150 C o 25 C 10 *Notes: 1. VGS = 0V o *Note: TJ = 25 C 0 5 10 15 ID, Drain Current [A] 20 1 0.0 25 Figure 5. Capacitance Characteristics *Note: 1. VGS = 0V 2. f = 1MHz 1000 Coss 500 Crss 0 0.1 FDB12N50U Rev. A2 1 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Ciss 2.5 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1500 2. 250µs Pulse Test 0.5 1.0 1.5 2.0 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 2000 Capacitances [pF] 4.5 6 4 2 0 30 3 VDS = 100V VDS = 250V VDS = 400V 8 *Note: ID = 10A 0 5 10 15 20 Qg, Total Gate Charge [nC] 25 www.fairchildsemi.com FDB12N50U N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. Maximum Safe Operating Area 100 20µs ID, Drain Current [A] BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 10 1ms 10ms DC 1 Operation in This Area is Limited by R DS(on) *Notes: 0.1 0.9 -50 0 50 100 150 o TJ, Junction Temperature [ C] o 1. TC = 25 C *Notes: 1. VGS = 0V 2. ID = 250µA 0.8 -100 100µs o 0.01 200 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 9. Maximum Drain Current vs. Case Temperature 12 ID, Drain Current [A] 10 8 6 4 2 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 10. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.2 0.1 0.1 0.05 t1 0.01 0.01 t2 *Notes: Single pulse o 1E-3 -5 10 FDB12N50U Rev. A2 PDM 0.02 1. ZθJC(t) = 0.75 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 0 10 1 10 www.fairchildsemi.com FDB12N50U N-Channel MOSFET Typical Performance Characteristics (Continued) FDB12N50U N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDB12N50U Rev. A2 5 www.fairchildsemi.com FDB12N50U N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as DUT V DD • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/ d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDB12N50U Rev. A2 6 www.fairchildsemi.com FDB12N50U N-Channel MOSFET Mechanical Dimensions Dimensions in Millimeters FDB12N50U Rev. A2 7 www.fairchildsemi.com The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 FDB12N50U Rev. A2 8 www.fairchildsemi.com FDB12N50U N-Channel MOSFET TRADEMARKS