ON MBRD835LT4G Switchmode power rectifier Datasheet

MBRD835LG,
MBRD835LT4G,
SBRD8835LG,
SBRD8835LT4G
SWITCHMODE
Power Rectifier
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SCHOTTKY BARRIER
RECTIFIER
8.0 AMPERES, 35 VOLTS
DPAK Surface Mount Package
This SWITCHMODE power rectifier which uses the Schottky
Barrier principle with a proprietary barrier metal, is designed for use
as output rectifiers, free wheeling, protection and steering diodes in
switching power supplies, inverters and other inductive switching
circuits.
DPAK
CASE 369C
Features
•
•
•
•
•
•
•
Low Forward Voltage
150°C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
Compact Size
Lead Formed for Surface Mount
SBRD8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant*
1
MARKING DIAGRAM
YWW
B
835LG
B835LG
Y
WW
G
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 0.4 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•
•
= Specific Device Number
= Year
= Work Week
= Pb−Free Device
ORDERING INFORMATION
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped 75 Units Per Plastic Tube
ESD Rating:
♦ Machine Model = C (> 400 V)
♦ Human Body Model = 3B (> 8000 V)
4
3
Package
Shipping†
MBRD835LG
DPAK
(Pb−Free)
75 Units / Rail
SBRD8835LG
DPAK
(Pb−Free)
75 Units / Rail
MBRD835LT4G
DPAK
(Pb−Free)
2,500 /
Tape & Reel **
SBRD8835LT4G
DPAK
(Pb−Free)
2,500 /
Tape & Reel **
Device
**
16 mm Tape, 13” Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. 11
1
Publication Order Number:
MBRD835L/D
MBRD835LG, MBRD835LT4G, SBRD8835LG, SBRD8835LT4G
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
35
V
Average Rectified Forward Current
(At Rated VR, TC = 88°C)
IF(AV)
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC = 80°C)
IFRM
Non−Repetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
IFSM
Repetitive Avalanche Current
(Current Decaying Linearly to Zero in 1 s, Frequency Limited by TJmax)
IAR
Storage / Operating Case Temperature
Tstg
−65 to +150
TJ
−65 to +150
°C
dv/dt
10,000
V/s
Operating Junction Temperature (Note 1)
Voltage Rate of Change (Rated VR)
8.0
16
75
2.0
A
A
A
A
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance − Junction−to−Case
RJC
2.8
°C/W
Thermal Resistance − Junction−to−Ambient (Note 2)
RJA
80
°C/W
Symbol
Value
Unit
2. Rating applies when surface mounted on the minimum pad size recommended.
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
(iF = 8 Amps, TC = + 25°C)
(iF = 8 Amps, TC = +125°C)
VF
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, TC = + 25°C)
(Rated dc Voltage, TC = +100°C)
IR
3. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2%.
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2
0.51
0.41
1.4
35
V
mA
MBRD835LG, MBRD835LT4G, SBRD8835LG, SBRD8835LT4G
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
iF, INSTANTANEOUS FORWARD CURRENT (mA)
TYPICAL CHARACTERISTICS
10
TJ = 125°C
25°C
1
0.1
0.01
0
0.1
0.2
0.3
0.4
0.5
vF, INSTANTANEOUS VOLTAGE (VOLTS)
0.6
10
TJ = 125°C
1
75°C
0.1
25°C
0.01
0
Figure 1. Maximum Forward Voltage
0.1
0.2
0.3
0.4
0.5
VF, INSTANTANEOUS VOLTAGE (VOLTS)
0.6
Figure 2. Typical Forward Voltage
1000
100
10
100°C
I R, REVERSE CURRENT (mA)
I R, REVERSE CURRENT (mA)
100
TJ = 125°C
1
25°C
0.1
TJ = 125°C
100°C
10
1
75°C
0.1
0.01
0.001
25°C
0
5
10
15
20
25
VF, REVERSE VOLTAGE (VOLTS)
30
0.01
35
0
Figure 3. Maximum Reverse Current
5
10
15
20
25
VR, REVERSE VOLTAGE (VOLTS)
30
Figure 4. Typical Reverse Current
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3
35
MBRD835LG, MBRD835LT4G, SBRD8835LG, SBRD8835LT4G
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
TJ = 25°C
TYPICAL
MAXIMUM
1000
100
1
10
VR, REVERSE VOLTAGE (VOLTS)
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Maximum and Typical Capacitance
16
14.4
TJ = 125°C
12.8
RJA = 6°C/W
dc
(RESISTIVE LOAD)
11.2
9.6
SQUARE WAVE
(CAPACITIVE
IPK
+5
LOAD)
IAV
8
6.4
4.8
10
3.2
1.6
0
20
80
85
90
95 100 105 110 115
TC, CASE TEMPERATURE (°C)
120
125
130
8
TJ = 125°C
7
dc
6
(RESISTIVE LOAD)
5
P F(AV), AVERAGE FORWARD POWER DISSIPATION (WATTS
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
4
TJ = 125°C
(RESISTIVE LOAD)
3.5
3
SQUARE WAVE
2.5
RJA = 80°C/W
SURFACE MOUNTED ON
MINIMUM RECOMMENDED
PAD SIZE
(CAPACITIVE
IPK
+5
LOAD)
IAV
2
1.5
10
1
20
0.5
0
0
10
20
(CAPACITIVE
IPK
+5
LOAD)
IAV
SQUARE WAVE
3
2
10
1
20
0
0
10
20
30 40 50 60 70 80 90 100 110 120 130
TA, AMBIENT TEMPERATURE (°C)
Figure 7. Current Derating
5
dc
SURFACE MOUNTED ON
MINIMUM RECOMMENDED
PAD SIZE
4
Figure 6. Current Derating, Infinite Heatsink
4.5
RJA = 40°C/W
30 40 50 60 70 80 90 100 110 120 130
TA, AMBIENT TEMPERATURE (°C)
8
TJ = 125°C
7
(RESISTIVE LOAD)
(CAPACITIVE
IPK
+5
LOAD)
IAV
6
SQUARE WAVE
dc
5
10
4
20
3
2
1
0
0
Figure 8. Current Derating, Free Air
1.5
3
4.5
6
7.5
9 10.5 12 13.5
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 9. Forward Power Dissipation
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4
15
MBRD835LG, MBRD835LT4G, SBRD8835LG, SBRD8835LT4G
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MBRD835L/D
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