MBRD835LG, MBRD835LT4G, SBRD8835LG, SBRD8835LT4G SWITCHMODE Power Rectifier http://onsemi.com SCHOTTKY BARRIER RECTIFIER 8.0 AMPERES, 35 VOLTS DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. DPAK CASE 369C Features • • • • • • • Low Forward Voltage 150°C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in Compact Size Lead Formed for Surface Mount SBRD8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant* 1 MARKING DIAGRAM YWW B 835LG B835LG Y WW G Mechanical Characteristics • Case: Epoxy, Molded • Weight: 0.4 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • • = Specific Device Number = Year = Work Week = Pb−Free Device ORDERING INFORMATION • Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped 75 Units Per Plastic Tube ESD Rating: ♦ Machine Model = C (> 400 V) ♦ Human Body Model = 3B (> 8000 V) 4 3 Package Shipping† MBRD835LG DPAK (Pb−Free) 75 Units / Rail SBRD8835LG DPAK (Pb−Free) 75 Units / Rail MBRD835LT4G DPAK (Pb−Free) 2,500 / Tape & Reel ** SBRD8835LT4G DPAK (Pb−Free) 2,500 / Tape & Reel ** Device ** 16 mm Tape, 13” Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 November, 2012 − Rev. 11 1 Publication Order Number: MBRD835L/D MBRD835LG, MBRD835LT4G, SBRD8835LG, SBRD8835LT4G MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 35 V Average Rectified Forward Current (At Rated VR, TC = 88°C) IF(AV) Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 80°C) IFRM Non−Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) IFSM Repetitive Avalanche Current (Current Decaying Linearly to Zero in 1 s, Frequency Limited by TJmax) IAR Storage / Operating Case Temperature Tstg −65 to +150 TJ −65 to +150 °C dv/dt 10,000 V/s Operating Junction Temperature (Note 1) Voltage Rate of Change (Rated VR) 8.0 16 75 2.0 A A A A °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance − Junction−to−Case RJC 2.8 °C/W Thermal Resistance − Junction−to−Ambient (Note 2) RJA 80 °C/W Symbol Value Unit 2. Rating applies when surface mounted on the minimum pad size recommended. ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 3) (iF = 8 Amps, TC = + 25°C) (iF = 8 Amps, TC = +125°C) VF Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TC = + 25°C) (Rated dc Voltage, TC = +100°C) IR 3. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2%. http://onsemi.com 2 0.51 0.41 1.4 35 V mA MBRD835LG, MBRD835LT4G, SBRD8835LG, SBRD8835LT4G IF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (mA) TYPICAL CHARACTERISTICS 10 TJ = 125°C 25°C 1 0.1 0.01 0 0.1 0.2 0.3 0.4 0.5 vF, INSTANTANEOUS VOLTAGE (VOLTS) 0.6 10 TJ = 125°C 1 75°C 0.1 25°C 0.01 0 Figure 1. Maximum Forward Voltage 0.1 0.2 0.3 0.4 0.5 VF, INSTANTANEOUS VOLTAGE (VOLTS) 0.6 Figure 2. Typical Forward Voltage 1000 100 10 100°C I R, REVERSE CURRENT (mA) I R, REVERSE CURRENT (mA) 100 TJ = 125°C 1 25°C 0.1 TJ = 125°C 100°C 10 1 75°C 0.1 0.01 0.001 25°C 0 5 10 15 20 25 VF, REVERSE VOLTAGE (VOLTS) 30 0.01 35 0 Figure 3. Maximum Reverse Current 5 10 15 20 25 VR, REVERSE VOLTAGE (VOLTS) 30 Figure 4. Typical Reverse Current http://onsemi.com 3 35 MBRD835LG, MBRD835LT4G, SBRD8835LG, SBRD8835LT4G TYPICAL CHARACTERISTICS C, CAPACITANCE (pF) TJ = 25°C TYPICAL MAXIMUM 1000 100 1 10 VR, REVERSE VOLTAGE (VOLTS) IF(AV), AVERAGE FORWARD CURRENT (AMPS) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 5. Maximum and Typical Capacitance 16 14.4 TJ = 125°C 12.8 RJA = 6°C/W dc (RESISTIVE LOAD) 11.2 9.6 SQUARE WAVE (CAPACITIVE IPK +5 LOAD) IAV 8 6.4 4.8 10 3.2 1.6 0 20 80 85 90 95 100 105 110 115 TC, CASE TEMPERATURE (°C) 120 125 130 8 TJ = 125°C 7 dc 6 (RESISTIVE LOAD) 5 P F(AV), AVERAGE FORWARD POWER DISSIPATION (WATTS IF(AV), AVERAGE FORWARD CURRENT (AMPS) 4 TJ = 125°C (RESISTIVE LOAD) 3.5 3 SQUARE WAVE 2.5 RJA = 80°C/W SURFACE MOUNTED ON MINIMUM RECOMMENDED PAD SIZE (CAPACITIVE IPK +5 LOAD) IAV 2 1.5 10 1 20 0.5 0 0 10 20 (CAPACITIVE IPK +5 LOAD) IAV SQUARE WAVE 3 2 10 1 20 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 TA, AMBIENT TEMPERATURE (°C) Figure 7. Current Derating 5 dc SURFACE MOUNTED ON MINIMUM RECOMMENDED PAD SIZE 4 Figure 6. Current Derating, Infinite Heatsink 4.5 RJA = 40°C/W 30 40 50 60 70 80 90 100 110 120 130 TA, AMBIENT TEMPERATURE (°C) 8 TJ = 125°C 7 (RESISTIVE LOAD) (CAPACITIVE IPK +5 LOAD) IAV 6 SQUARE WAVE dc 5 10 4 20 3 2 1 0 0 Figure 8. Current Derating, Free Air 1.5 3 4.5 6 7.5 9 10.5 12 13.5 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 9. Forward Power Dissipation http://onsemi.com 4 15 MBRD835LG, MBRD835LT4G, SBRD8835LG, SBRD8835LT4G PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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