MOTOROLA MRF21125S Rf power field effect transistor Datasheet

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by MRF21125/D
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for W–CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2–carrier W–CDMA Performance for VDD = 28 Volts, IDQ = 1600
mA, f1 = 2.1125 GHz, f2 = 2.1225 GHz, Channel bandwidth = 3.84 MHz,
adjacent channels at ± 5 MHz , ACPR and IM3 measured in 3.84 MHz
bandwidth. Peak/Avg = 8.5 dB @ 0.01% probability on CCDF.
Output Power — 20 Watts
Efficiency — 18%
Gain — 13 dB
IM3 — –43 dBc
ACPR — –45 dBc
• 100% Tested under 2–carrier W–CDMA
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 125 Watts (CW)
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
2170 MHz, 125 W, 28 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465B–03, STYLE 1
(NI–880)
(MRF21125)
CASE 465C–02, STYLE 1
(NI–880S)
(MRF21125S)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
+15, –0.5
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
330
1.89
Watts
W/°C
Storage Temperature Range
Tstg
–65 to +150
°C
Operating Junction Temperature
TJ
200
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
RθJC
0.53
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2002
MRF21125 MRF21125S MRF21125SR3
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
—
—
Vdc
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
µAdc
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
gfs
—
10.8
—
S
Gate Threshold Voltage
(VDS = 10 V, ID = 300 µA)
VGS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(VDS = 28 V, ID = 1300 mA)
VGS(Q)
2.5
3.9
4.5
Vdc
Drain–Source On–Voltage
(VGS = 10 V, ID = 1 A)
VDS(on)
—
0.12
—
Vdc
Crss
—
5.4
—
pF
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 µAdc)
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
FUNCTIONAL TESTS (In Motorola Test Fixture) 2–carrier W–CDMA, 3.84 MHz Channel Bandwidth, IM3 measured in 3.84 MHz Bandwidth.
Peak/Avg = 8.5 dB @ 0.01% probability on CCDF.
Common–Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 20 W Avg, 2–carrier W–CDMA, IDQ = 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
Gps
12
13
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 20 W Avg, 2–carrier W–CDMA, IDQ = 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
η
17
18
—
%
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 20 W Avg, 2–carrier W–CDMA, IDQ = 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz; IM3 measured at f1 –15 MHz and f2 +15 MHz referenced to
carrier channel power.)
IM3
—
–43
–40
dBc
Adjacent Channel Power Ratio
(VDD = 28 Vdc, Pout = 20 W Avg, 2–carrier W–CDMA, IDQ = 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz; ACPR measured at f1 –10 MHz and f2 +10 MHz referenced to
carrier channel power.)
ACPR
—
–45
–40
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 20 W Avg, 2–carrier W–CDMA, IDQ = 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
IRL
—
–12
–9.0
dB
Output Mismatch Stress
(VDD = 28 Vdc, Pout = 125 W CW, IDQ = 1600 mA, f = 2170 MHz,
VSWR = 5:1, All Phase Angles at Frequency of Test)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
MRF21125 MRF21125S MRF21125SR3
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Common–Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz,
f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Gps
—
12
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz,
f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
η
—
34
—
%
Intermodulation Distortion
(VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz,
f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
IMD
—
–30
—
dBc
Common–Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 125 W CW, IDQ = 1600 mA, f1 = 2170.0 MHz)
Gps
—
11.5
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 125 W CW, IDQ = 1600 mA, f = 2170.0 MHz)
η
—
46
—
%
TYPICAL TWO–TONE PERFORMANCE (In Motorola Test Fixture)
TYPICAL CW PERFORMANCE
MOTOROLA RF DEVICE DATA
MRF21125 MRF21125S MRF21125SR3
3
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
1.212″ x 0.082″ Microstrip
0.236″ x 0.082″ Microstrip
0.086″ x 0.254″ Microstrip
0.357″ x 0.082″ Microstrip
0.274″ x 1.030″ Microstrip
0.466″ x 0.050″ Microstrip
0.501″ x 0.050″ Microstrip
0.600″ x 1.056″ Microstrip
Z9
Z10
Z11
Z12
Z13
Raw Board
Material
0.179″ x 0.219″ Microstrip
0.100″ x 0.336″ Microstrip
0.534″ x 0.142″ Microstrip
0.089″ x 0.080″ Microstrip
0.620″ x 0.080″ Microstrip
0.030″ Glass Teflon, 2 oz Copper,
3″ x 5″ Dimensions,
Arlon GX0300–55–22, εr = 2.55
Figure 1. MRF21125 Test Circuit Schematic
Table 1. MRF21125 Test Circuit Component Designations and Values
Designators
Description
B1
Ferrite Bead (Square), Fair Rite #2743019447
C1
9.1 pF Chip Capacitor, B Case, ATC #100B9R1CCA500X
C2, C4, C11, C12
22 µF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394
C3, C7
20000 pF Chip Capacitors, B Case, ATC #100B203JCA50X
C5, C14
5.1 pF Chip Capacitors, B Case, ATC #100B5R1CCA500X
C6
100000 pF Chip Capacitor, B Case, ATC #100B104JCA50X
C8
10000 pF Chip Capacitor, B Case, ATC #100B103JCA50X
C9
7.5 pF Chip Capacitor, B Case, ATC #100B7R5CCA500X
C10
1.2 pF Chip Capacitor, B Case, ATC #100B1R2CCA500X
C13
0.1 µF Chip Capacitor, Kemet #CDR33BX104AKWS
C15
16 pF Chip Capacitor, B Case, ATC #100B160KP500X
C16
0.6 – 4.5 pF Variable Capacitor, Johanson Gigatrim #27271SL
R1
1.0 kΩ, 1/8 W Chip Resistor
R2
560 kΩ, 1/8 W Chip Resistor
R3
4.7 Ω, 1/8 W Chip Resistor
R4
12 Ω, 1/8 W Chip Resistor
W1
Solid Copper Buss Wire, 16 AWG
MRF21125 MRF21125S MRF21125SR3
4
MOTOROLA RF DEVICE DATA
Figure 2. MRF21125 Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
MRF21125 MRF21125S MRF21125SR3
5
)
)
%1(
)
)
)
)
) ) ), @
, @
< &' < &' ) @
< &' @
< &' ) 13 # 2 4, 2 < &' 2 < &'
>6++? -963*+: %>6++? 6+15*10>(A &' @ < &' 6BC,:< 2 < 1 @ < = 8.D6D*?*0E %(
η
97
η
./0
1 2 1 2 97
*+ " %,-(
η ,""$%=( 97 " ,%1(
./0 "%,-(
η ,""$%=( 97 " ,%1(
) ) )
)
97 " ,%1(
";,-%13(
) 97
4,
4,
4,
4,
./0 " %,-( "
Figure 7. Intermodulation Distortion versus
Output Power
MRF21125 MRF21125S MRF21125SR3
6
) 2 13
./0 2 %"(
# 2 4,
5.).+ 67/84+0 &' .+ -963*+:
13
2 < &' 2 < &'
5.).+ 67/84+0 &' .+ -963*+:
)
;
"#"$ %&'(
)
4,
4,
4,
4,
2 13
2 < &' 2 < &'
5.).+ 67/84+0 &' .+ -963*+:
)
)
)
Figure 6. Broadband Linearity Performance
)
)
< %),((
η
2
)
./0 " %,- ,
)
) )
)
,
)
Figure 5. CW Performance
)
)
Figure 4. 2 Carrier W–CDMA ACPR, IM3,
Power Gain and Drain Efficiency versus
Output Power
)
Figure 3. 2 Carrier (10 MHz spacing)
W–CDMA Spectrum
13
# 2 4,
2
&'
)
)
) 2
) "#"$ %&'(
) 2
± %13( ± ,%13(
< &'
>6++? )
; ";--%1(
";,-%13(
) η ,""$%=( 97 " ,%1(
TYPICAL CHARACTERISTICS
./0 " %,-( "
Figure 8. Power Gain versus Output Power
MOTOROLA RF DEVICE DATA
2
&'
*+
&'
2 # 2 4, ./0 2 %,:<(
)688*8 ),
f
MHz
.2
2
Ω
&'
Zin
;F
Zin
Ω
ZOL*
Ω
2110
3.81 + j6.86
1.56 – j1.58
2140
4.33 + j7.90
1.53 – j1.90
2170
4.84 + j8.46
1.48 – j2.26
= Complex conjugate of source impedance.
ZOL* = Complex conjugate of the optimum load
impedance at a given output power, voltage,
IMD, bias current and frequency.
&'
.0 A ;F 567 3>.7+ D671 .+ 0861.7 D05+ :6*+ ./09/0
9.58 186*+ *3*+3E 6+1 *+084.1/?60*.+ 1*70.80*.+<
.0 A 67/84+07 58 06B+ .+ 0> 070 3*83/*0
5*0> -, ;6/+3>87<
+9/0
603>*+:
05.8B
/09/0
603>*+:
05.8B
*3
+18 70
Z
in
Z
*
OL
Figure 9. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF21125 MRF21125S MRF21125SR3
7
NOTES
MRF21125 MRF21125S MRF21125SR3
8
MOTOROLA RF DEVICE DATA
NOTES
MOTOROLA RF DEVICE DATA
MRF21125 MRF21125S MRF21125SR3
9
NOTES
MRF21125 MRF21125S MRF21125SR3
10
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
B
4
G
2X
1
Q
DDD
,
"-A
< "- , ;", " ,-
$ <) <
< ;; "-A &<
< "- & - ",-" < %< ( ,,$
,G, " $<
< """ ; "" "- < % <( ,-" -"<
B
(FLANGE)
3
K
2
DDD
D
,
M
DDD
,
,
333
N
333
R
(INSULATOR)
,
S
(LID)
666
,
(LID)
(INSULATOR)
H
C
T
A
A
(FLANGE)
INCHES
MIN
MAX
<
<
<
<
< < <
<
<
<
<
<
< -
<
<
< < <
<
<
<
< < < < < < <"
< "
< "
SEATING
PLANE
CASE 465B–03
ISSUE C
(NI–880)
(MRF21125)
B
"-A
< "- , ;", " ,-
$ <) <
< ;; "-A &<
< "- & - ",-" < %< ( ,,$
,G, " $<
1
B
(FLANGE)
K
2
DDD
D
,
MILLIMETERS
MIN
MAX
<
< <
<
<
<
<
<
<
< <
< <-
<
<
<
<
< <
<
<
<
<
< <
< <
< "
< "
< "
-$;" A
< ,
< ,"
< -"
F
E
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
DDD
,
333
,
M
(INSULATOR)
N
R
333
,
666
,
S
(LID)
(LID)
(INSULATOR)
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
<
< <
<
< < <
<
<
<
<
<
<
<
< < <
<
<
<
< < < < <"
< "
< "
MILLIMETERS
MIN
MAX
<
< <
<
<
<
<
<
<
< <
< <
<
<
<
< <
<
<
< <
< <
< "
< "
< "
-$;" A
< ,
< ,"
< -"
H
C
F
E
T
A
A
(FLANGE)
MOTOROLA RF DEVICE DATA
SEATING
PLANE
CASE 465C–02
ISSUE A
(NI–880S)
(MRF21125S)
MRF21125 MRF21125S MRF21125SR3
11
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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Motorola was negligent regarding the design or manufacture of the part. Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
MOTOROLA and the
logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners.
E Motorola, Inc. 2002.
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MRF21125 MRF21125S MRF21125SR3
◊
12
MOTOROLA RF DEVICE MRF21125/D
DATA