IXFR 21N100Q HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM IAR Maximum Ratings 1000 1000 V V ±20 ±30 V V TC = 25°C TC = 25°C, Note 1 TC = 25°C 18 84 21 A A A EAR EAS TC = 25°C TC = 25°C 60 2.5 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 10 V/ns PD TC = 25°C 350 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 2500 V~ 5 g TJ TJM Tstg TL 1.6 mm (0.063 in.) from case for 10 s VISOL 50/60 Hz, RMS = 1000 V = 18 A = 0.50 Ω trr ≤ 250 ns N-Channel Enhancement Mode, Low Qg, High dv/dt, Low trr, HDMOSTM Family Symbol VDSS ID25 RDS(on) t = 1 min ISOPLUS 247TM E153432 Isolated backside* G = Gate S = Source * Patent pending Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z IXYS advanced low Qg process z Low gate charge and capacitances - easier to drive -faster switching z Low drain to tab capacitance(<30pF) z Weight D = Drain z Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure z Rated for Unclamped Inductive Load Switching (UIS) z Fast intrinsic Rectifier Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 1mA 1000 V VGS(th) VDS = VGS, ID = 4mA 3 5 V IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT Notes 2, 3 © 2003 IXYS All rights reserved ±100 nA TJ = 125°C 100 µA 2 mA 0.5 Ω Applications z DC-DC converters z z z z Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages z Easy assembly z z Space savings High power density DS98723B(01/03) IXFR 21N100Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = IT Notes 2, 3 22 S 5900 pF 550 pF Crss 90 pF td(on) 21 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 16 tr VGS = 10 V, VDS = 0.5 • VDSS, ID = IT 18 ns td(off) RG = 1 Ω (External), Notes 2, 3 60 ns 12 ns 170 nC 38 nC 75 nC tf QG(on) QGS VGS = 10 V, VDS = 0.5 • VDSS, ID = IT Notes 2, 3 QGD ISOPLUS 247 OUTLINE 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Dim. RthJC 0.35 0.15 RthCK Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 21 A ISM Repetitive; Note 1 84 A VSD IF = IT, VGS = 0 V, Notes 2, 3 1.5 V 250 ns trr QRM IF = IS,-di/dt = 100 A/µs, VR = 100 V 1.4 µC 8 A IRM A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 Note: 1. Pulse width limited by TJM 2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 3. IT = 10.5A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXFR 21N100Q 30 40 VGS = 9V 8V 7V 6V ID - Amperes 30 TJ = 125OC V GS = 9V 8V 7V 6V 25 ID - Amperes TJ = 25OC 20 5V 20 15 10 5V 10 5 4V 0 0 5 10 15 4V 0 20 0 5 10 VDS - Volts 30 35 2.6 VGS = 10V VGS = 10V 2.4 RDS(ON) - Normalized RDS(ON) - Normalized 25 Fig.2 Output Characteristics @ Tj = 125°C 2.8 O T J = 125 C 2.0 1.6 T J = 25OC 1.2 0 10 20 2.2 1.8 ID =21A ID =10.5A 1.4 1.0 25 30 50 100 125 150 Fig.4 Temperature Dependence of Drain to Source Resistance Fig.3 RDS(on) vs. Drain Current 24 25 20 ID - Amperes 20 15 10 16 12 T J = 125oC 8 TJ = 25oC 5 0 75 TJ - Degrees C ID - Amperes ID - Amperes 20 VDS - Volts Fig.1 Output Characteristics @ Tj = 25°C 0.8 15 4 -50 -25 0 25 50 75 100 125 150 TC - Degrees C Fig.5 Drain Current vs. Case Temperature © 2003 IXYS All rights reserved 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VGS - Volts Fig.6 Drain Current vs Gate Source Voltage 6.5 IXFR 21N100Q 10 30000 Capacitance - pF VGS - Volts 6 4 f = 100kHz Ciss 10000 VDS = 500 V ID = 21 A IG = 10 mA 8 Coss 1000 Crss 2 100 0 0 40 80 120 160 60 200 0 5 10 15 20 25 30 35 40 VDS - Volts Gate Charge - nC Fig. 7 Gate Charge Characteristic Curve Fig. 8 Capacitance Curves 90 ID - Amperes 75 60 45 30 TJ = 125OC TJ = 25OC 15 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD - Volts Fig. 9 Drain Current vs Drain Source Voltage R(th)JC - K/W 1.000 0.100 0.010 0.001 10-4 10-3 10-2 10-1 100 Pulse Width - Seconds Fig. 10 Transient Thermal Impedance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1