Comchip CDSW20-G Smd switching diode Datasheet

SMD Switching Diode
CDSW19-G/20-G/21-G
High Speed
RoHS Device
SOD-123
Features
-Fast Switching Speed
0.110 (2.80)
0.098 (2.50)
-Surface Mount Package Ideally Suited for
Automatic Insertion
0.028 (0.70)
0.071 (1.80)
0.019 (0.50)
0.055 (1.40)
-For General Purpose Switching Applications
0.154 (3.90)
0.141 (3.60)
Mechanical data
-Case: SOD-123, Molded Plastic
0.008 (0.20)max
0.053 (1.35)
-Terminals: Solderable per MIL-STD-202, Method
208
0.037 (0.95)
0.005 (0.12)max
0.016 (0.40)min
-Weight: 0.01 gram(approx.).
Dimensions in inches and (millimeters)
Maximum Rating (at Ta=25°C unless otherwise noted)
Symbol
Parameter
CDSW19-G
CDSW20-G
CDSW21-G
Unit
Non-Repetitive peak reverse voltage
VRM
120
200
250
V
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
VRRM
VRWM
VR
100
150
200
V
VR(RMS)
71
106
141
V
RMS reverse voltage
Forward continuous current
Average rectified output current
Peak forward surge current
@1.0mS
@1.0S
Repetitive peak forward current
Power dissipation
IFM
400
mA
Io
200
mA
IFSM
2.5
0.5
A
IFRM
625
mA
PD
250
Thermal Resistance (Junction to ambient)
R
Storage temperature
TSTG
JA
mW
O
C/W
500
-65 ~ +150
O
C
Electrical Characteristics (at Ta=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
IF = 0.1 A
IF = 0.2 A
VF
1.0
1.25
V
VR=100 V
VR=150 V
VR=200 V
IR
0.1
0.1
0.1
uA
Capacitance between terminals
f = 1 MHZ, VR=0V
CT
5
PF
Reverse recovery time
IF = IR=30 mA, RL =100 Ω, Irr = 0.1 X IR
tRR
50
nS
Forward voltage
Reverse current
CDSW19-G
CDSW20-G
CDSW21-G
REV:A
QW-B0018
Page 1
SMD Switching Diode
Typical Characteristics (CDSW19-G/20-G/21-G)
Fig.2 - Typical Reverse Characteristics
1
0.1
TA=25 OC
0.01
TA=75 OC
OO
TA=75
=-40 CC
O
TA=125 C
O
TA=150 C
0.001
0
0.2
O
TA=0 C
0.4
0.6
0.8
1.0
1.2
1.4
I R ,Ins tant ane ous R eve r se Cur rent (µA )
IF , I nst a nt aneous For w ar d C ur ren t (A )
Fig.1 - Forward Characteristics
TA=150 OC
TA=125 OC
10
O
1
TA=75 C
0.1
TA=25 C
O
O
TA=0 C
0.01
TTAA=-40
=75 OOC
C
0.001
0.0001
0
50
100
150
200
250
VF, Instantaneous Forward Voltage (V)
VR, Instantaneous Reverse Voltage (V)
Fig.3 - Power Derating Curve
Fig.4 - Typical Capacitance V.S.
Reverse Voltage
4.0
( F)
CT , Tot al Capaci t a nce p
300
P D , Power Dissipation, (mW)
100
250
200
150
100
3.5
3.0
2.5
2.0
1.5
1.0
50
0.5
0
0
25
50
75
100
125
TA, Ambient Temperature (°C)
150
0
0
10
20
30
40
VR, Reverse Voltage (V)
REV:A
QW-B0018
Page 2
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