SMD Switching Diode CDSW19-G/20-G/21-G High Speed RoHS Device SOD-123 Features -Fast Switching Speed 0.110 (2.80) 0.098 (2.50) -Surface Mount Package Ideally Suited for Automatic Insertion 0.028 (0.70) 0.071 (1.80) 0.019 (0.50) 0.055 (1.40) -For General Purpose Switching Applications 0.154 (3.90) 0.141 (3.60) Mechanical data -Case: SOD-123, Molded Plastic 0.008 (0.20)max 0.053 (1.35) -Terminals: Solderable per MIL-STD-202, Method 208 0.037 (0.95) 0.005 (0.12)max 0.016 (0.40)min -Weight: 0.01 gram(approx.). Dimensions in inches and (millimeters) Maximum Rating (at Ta=25°C unless otherwise noted) Symbol Parameter CDSW19-G CDSW20-G CDSW21-G Unit Non-Repetitive peak reverse voltage VRM 120 200 250 V Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage VRRM VRWM VR 100 150 200 V VR(RMS) 71 106 141 V RMS reverse voltage Forward continuous current Average rectified output current Peak forward surge current @1.0mS @1.0S Repetitive peak forward current Power dissipation IFM 400 mA Io 200 mA IFSM 2.5 0.5 A IFRM 625 mA PD 250 Thermal Resistance (Junction to ambient) R Storage temperature TSTG JA mW O C/W 500 -65 ~ +150 O C Electrical Characteristics (at Ta=25°C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit IF = 0.1 A IF = 0.2 A VF 1.0 1.25 V VR=100 V VR=150 V VR=200 V IR 0.1 0.1 0.1 uA Capacitance between terminals f = 1 MHZ, VR=0V CT 5 PF Reverse recovery time IF = IR=30 mA, RL =100 Ω, Irr = 0.1 X IR tRR 50 nS Forward voltage Reverse current CDSW19-G CDSW20-G CDSW21-G REV:A QW-B0018 Page 1 SMD Switching Diode Typical Characteristics (CDSW19-G/20-G/21-G) Fig.2 - Typical Reverse Characteristics 1 0.1 TA=25 OC 0.01 TA=75 OC OO TA=75 =-40 CC O TA=125 C O TA=150 C 0.001 0 0.2 O TA=0 C 0.4 0.6 0.8 1.0 1.2 1.4 I R ,Ins tant ane ous R eve r se Cur rent (µA ) IF , I nst a nt aneous For w ar d C ur ren t (A ) Fig.1 - Forward Characteristics TA=150 OC TA=125 OC 10 O 1 TA=75 C 0.1 TA=25 C O O TA=0 C 0.01 TTAA=-40 =75 OOC C 0.001 0.0001 0 50 100 150 200 250 VF, Instantaneous Forward Voltage (V) VR, Instantaneous Reverse Voltage (V) Fig.3 - Power Derating Curve Fig.4 - Typical Capacitance V.S. Reverse Voltage 4.0 ( F) CT , Tot al Capaci t a nce p 300 P D , Power Dissipation, (mW) 100 250 200 150 100 3.5 3.0 2.5 2.0 1.5 1.0 50 0.5 0 0 25 50 75 100 125 TA, Ambient Temperature (°C) 150 0 0 10 20 30 40 VR, Reverse Voltage (V) REV:A QW-B0018 Page 2