CJP04N60 TO-220-3L Plastic-Encapsulate MOSFETS CJP04N60 600V N-Channel Power MOSFET TO-220-3L General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode wigh fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. 1. GATE 2. DRAIN 3. SOURCE FEATURE z High Current Rating Lower Rds(on) z Lower Capacitance z z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS 600 Gate-Source Voltage VGSS ±30 Continuous Drain Current ID 4.0 Continuous Drain-Source Diode Forward Current IS 4.0 Single Pulsed Avalanche Energy (note1) EAS 260 mJ Thermal Resistance fromJunction to Ambient RθJA 62.5 ℃/W TJ, TSTG -55 ~+150 TL 260 Operating and Storage Temperature Range Maximum lead temperure for soldering purposes , 1/8”from case for 5 seconds [email protected] www.zpsemi.com Units V A ℃ 1 of 3 CJP04N60 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 600 Drain-source diode forward voltage(note2) VSD VGS = 0V, IS =4.0A 1.5 Zero gate voltage drain current IDSS VDS =600V, VGS =0V 25 Gate-body leakage current, forward(note2) IGSSF VDS =0V, VGS =30V 100 Gate-body leakage current, reverse(note2) IGSSR VDS =0V, VGS =-30V -100 Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA Static drain-source on-resistance RDS(on) VGS =10V, ID =2.0A V µA nA On characteristics (note2) Forward transconductance gfs VDS =50V, ID =2A 2.0 2.0 2.0 4.0 V 3.0 Ω 2.6 S Dynamic characteristics (note 3) Input capacitance Ciss 540 760 Output capacitance Coss 125 180 Reverse transfer capacitance Crss 8.0 20 Total gate charge Qg 5.0 10 Gate-source charge Qgs Gate-drain charge Qgd 2.0 Turn-on delay time (note3) td(on) 12 20 VDD=300V, VGS=10V, 7.0 10 RG=9.1Ω, ID =4.0A 19 40 10 20 VDS =25V,VGS =0V,f =1MHz pF Switching characteristics Turn-on rise time (note3) Turn-off delay time (note3) Turn-off fall time (note3) tr td(off) VDS =480V,VGS =10V,ID =4.0A tf nC 2.7 ns Notes : 1. L=30mH, IL=4 A, VDD=100V, VGS=10V,RG=25Ω,Starting TJ=25℃. 2. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. 3. These parameters have no way to verify. [email protected] www.zpsemi.com 2 of 3 CJP04N60 Output Characteristics Transfer Characteristics 8 1.0 Ta=25℃ Pulsed Ta=25℃ Pulsed 0.8 6V (A) (A) 6 VGS=4.5V 2 ID 5V 4 0.6 DRAIN CURRENT DRAIN CURRENT ID 5.5V 0.4 0.2 0 0.0 0 10 20 30 40 DRAIN TO SOURCE VOLTAGE VDS 50 0 2 (V) 4 6 GATE TO SOURCE VOLTAGE VGS 8 (V) RDS(ON) —— VGS RDS(ON) —— ID 15 5 Ta=25℃ Pulsed Ta=25℃ Pulsed 12 RDS(ON) 3 VGS= 10V ON-RESISTANCE ON-RESISTANCE RDS(ON) () () 4 2 1 9 6 ID=2A 3 0 0 0 1 2 DRAIN CURRENT 3 ID 4 0 2 4 6 GATE TO SOURCE VOLTAGE (A) 8 VGS 10 (V) IS —— VSD 4 Ta=25℃ Pulsed SOURCE CURRENT IS (A) 1 0.1 0.01 1E-3 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE [email protected] 1.0 1.2 VSD (V) www.zpsemi.com 3 of 3