Niuhang LLDB3 Silicon bidirectional diac Datasheet

Niu Hang
Electronic Co. Ltd
Production
Data Sheet
LLDB3,LLDC34,LLDB4,LLDB6
SILICON BIDIRECTIONAL DIAC
VOLTAGE
LL-34
150mWatts
DISSIPATION
28-56Volts
Unit:Inch(mm)
FEATURES
The three-layer, two-terminal, axial-lead, hermetically sealed diacs are
designed specifically for triggering thyristors. They demonstrate low breakover
current at breakover voltage as they withstand peak pulse current. The breakover
symmetry is within three volts(DB3,DC34,DB4) or four volts(DB6). These diacs are
intended for use in thyrisitors phase control , circuits for lamp dimming, universal
motor speed control and heat control.
NH's DB3/DC34/DB4/DB6 are bi-directional triggered diode designed to operate
in conjunction with Triacs and SCR's
High temperature soldering guaranteed:260℃/10 seconds at terminals
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
MECHANICAL DATA
Case: MiniMELF glass case(SOD-80)
Weight: Approx. 0.05 gram
Ƶ
ABSOLUTE MAXIMUM RATINGS
Value
Parameters
Symbols
Units
LLDB3
PC
Power Dissipation on Printed
Circuit(L=10mm)
TA=50 C
ITRM
Repetitive Peak on-state
Current
tp=10ms
f=100Hz
TSTG/TJ
Ƶ
LLDB4
LLDC34
LLDB6
mW
150
Storage and Operating Junction Temperature
A
1.6
2.0
C
-40 to+125
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Value
Symbols
Parameters
Units
Test Condition
LLDB3
VBO
│+VBO││-VBO│
│+
V│
Breakover Voltage (Note 2 )
C=22nF(Note 2)
See diagram 1
Min
Typ
Max
Breakover Voltage Symmetry
C=22nF(Note 2)
See diagram 1
Max
I=(IBO to IF=10mA)
See Diagram 1
Dynamic Breakover Voltage (Note1)
28
32
36
LLDC34
LLDB4
35
40
45
LLDB6
56
60
70
V
+3
+4
V
Min
5
10
V
V
30
34
38
VO
Output Voltage (Note 1 )
See Diagram 2
Min
5
IBO
Breakover Current (Note1)
C=22nF(Note 2)
Max
100
mA
See Diagram 3
Typ
1.5
ms
VB=0.5 VBO max
see diagram 1
Max
10
mA
tr
IB
Rise Time (Note1)
Leakage Current (Note1)
Notes: 1.Electrical characteristics applicable in both forward and reverse directions.
2.Connected in parallel with the devices.
http://www.dgniuhang.com
Date:2014/10/20
Rev.:AA
Page: 1 of 5
Niu Hang
Electronic Co. Ltd
Production
Data Sheet
LLDB3,LLDC34,LLDB4,LLDB6
SILICON BIDIRECTIONAL DIAC
RATINGANDCHARACTERISTICCURVES
(TA=25°C(UNLESS OTHERWISE NOTED)
+IF
10mA
IBO
IB
0.5 VBO
-V
+V
V
10KW
P
220V
50Hz
VBO
500KW
D.U.T
VO
R=20W
0.1mF
-IF
DIAGRAM 1: Current-voltage characteristics
DIAGRAM 2: Test circuit for output voltage
P (mW)
160
140
IP
90%
120
100
80
60
40
0
tr
DIAGRAM 3: Test circuit see diagram2 adjust R for I =0.5A
1.08
Tamb( C)
20
10%
0 10 20 30 40 50 60 70 80 90 100 110 120 130
FIG.1-Power dissipation versus ambient
temperature (maximum values)
VBO(TJ)
VBO(TJ=25 C)
ITRM(A)
2
f=100Hz
TJ initial=25 C
1
1.06
1.04
0.1
tp(ms)
1.02
1.00
25
0.01
TJ125
( C)
50
75
100
FIG.2-Relative variation of VBO versus junction
temperature(typical values)
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10
100
1000
10000
125
FIG.3-Peak pulse current versus pulse duration
(maximum values)
Date:2014/10/20
Rev.:AA
Page: 2 of 5
Niu Hang
Electronic Co. Ltd
Production
Data Sheet
LLDB3,LLDC34,LLDB4,LLDB6
SILICON BIDIRECTIONAL DIAC
02817,1*3$'/$<287
LL-34
Unit:inch(mm)
0.167
(4.25)
0.038
(0.97)
0.048
(1.22)
0.091
(2.31)
25'(5,1)250$7,21
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Quantity
Product code
Pack
Reel Size
(mm)
(pcs/reel)
LL-34
T/R
Φ180
3000
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Box Size
L×W×H
(mm)
îî
Date:2014/10/20
Quantity
(reel/box)
Rev.:AA
Carton Size
L×W×H
(mm)
Quantity
(box/carton)
îî
Page: 3 of 5
Niu Hang
Electronic Co. Ltd
Production
Data Sheet
LLDB3,LLDC34,LLDB4,LLDB6
SILICON BIDIRECTIONAL DIAC
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
Soldering Time
5 +1/-1 seconds
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
http://www.dgniuhang.com
Date:2014/10/20
Rev.:AA
Page: 4 of 5
Niu Hang
Electronic Co. Ltd
Production
Data Sheet
LLDB3,LLDC34,LLDB4,LLDB6
SILICON BIDIRECTIONAL DIAC
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•
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from niuhang Electronics co., LTD
•
Niuhang Electronics co., LTD. reserves the rights to make changes of the content herein
the document anytime without notification.
•
Niuhang Electronics co., LTD. disclaims any and all liability arising out of the application or
use of any product including damages incidentally and consequentially occurred.
•
Niuhang Electronics co., LTD. does not assume any and all implied warranties,
including warranties of fitness for particular purpose,non-infringement and merchantability.
•
Applications shown on the herein document are examples of standard use and operation.
Customers are responsible in comprehending the suitable use in particular applications.
Niuhang Electronics co., LTD.makes no representation or warranty that such applications will
be suitable for the specified use without further testing or modification.
•
The products shown herein are not designed and authorized for equipments requiring high
level of reliability or relating to human life and for any applications concerning life-saving or
life-sustaining,such as medical instruments.transportation equipment,aerospae machinery
et cetera.Customers usin or selling these products for use in such applications do so at their
own rish and agree to fully indemnify Niuhang Electronics co., LTD.for any damages resulting
resulting from such improper use or sale.
•
When the appearance of the product and chip size does not change, in order to product
quality, change the internal structure and the production process Niuhang can not notify
the customer.
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Date:2014/10/20
Rev.:AA
Page: 5 of 5
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