SUNMATE BYT56J Fast recover y rectifier diode Datasheet

BYT56A - BYT56M
FAST RECOVERY RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 3.0 A
Features
! Highcurrent capability
! High surge current capability
! High reliability
! Low reverse current
! Low forward voltage drop
! Fast switching for high efficiency
B
A
A
C
D
Mechanical Data
! Case: DO-201AD, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 1.2 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
DO-201AD
Dim
Min
A
25.40
Max
¾
B
7.20
9.50
C
1.20
1.30
D
4.80
5.30
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
TA = 25C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol BYT56A BYT56B BYT56D BYT56G BYT56J BYT56K BYT56M Unit
Maximum recurrent peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forw ard rectified current
9.5mm lead length,
@TA=75
IF(AV)
3.0
A
IFSM
150.0
A
VF
1.4
V
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load @TJ=125
Maximum instantaneous forw ard voltage
@ 3.0A
Maximum reverse current
at rated DC blocking voltage
@TA=25
@TA=100
IR
10.0
150.0
Maximum reverse recovery time
(Note1)
trr
100
Typical junction capacitance
(Note2)
CJ
Typical thermal resistance
(Note3)
Operating junction temperature range
Storage temperature range
75
A
ns
50
RθJA
30
TJ
- 55 ---- + 150
TSTG
- 55 ---- + 150
pF
/W
NOTE: 1. Measured with IF=0.5A, IR=1A, I rr=0.25A.
2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
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FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50 Ω
Trr
10 Ω
+ 0.5
D.U.T.
+
0
PULSE
GENERATOR
( NOTE 2 )
50 Vdc
(approx)
1Ω
- 0.25
OSCILLOSCOPE
( NOTE 1 )
- 1.0 A
SET TIME BASE FOR 25-35 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
1
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
FIG.3 - MAXIMUM THERMAL RESISTANCE
vs. LEAD LENGTH
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
50
VR = VRRM
half sinewave
RthJA = 45K/W
L = 10 mm
4
RthJA - Therm. Resist.
Junction/Ambient (K/W)
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
5
3
2
1
0
40
30
20
25
50
75
100
125
150
175
L
TL = constant
10
0
0
L
0
5
10
15
20
25
30
35
40
L , Lead Length (mm)
AMBIENT TEMPERATURE, ( °C)
FIG.5 - REVERSE CURRENT
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
vs. JUNCTION TEMPERATURE
100
IR, REVERSE CURRENT(µA)
FORWARD CURRENT, AMPERES
10
TJ = 25 °C
10
1
0.1
10
VR = VRRM
1
0.1
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3.0
25
50
75
100
125
150
175
200
Tj, JUNCTION TEMPERATURE
FORWARD VOLTAGE, VOLTS
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