MBR735 - MBR7150 CREAT BY ART 7.5 AMPS. Schottky Barrier Rectifiers TO-220AC Pb RoHS COMPLIANCE Features Plastic material used carriers Underwriters Laboratory Classification 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Guard-ring for overvoltage protection High temperature soldering guaranteed: 260℃/10 seconds, 0.25"(6.35mm) from case Green compound with suffix "G" on packing code & prefix "G" on datecode Mechanical Data Dimensions in inches and (millimeters) Marking Diagram Case: JEDEC TO-220AC molded plastic body Terminals: Pure tin plated, lead free, solderable per MIL-STD-750, Method 2026 MBR7XX G = Green Compound Polarity: As marked Y = Year Mounting position:Any WW = Work Week Mounting torque: 5 in. - lbs, max Weight: 1.85 grams = Specific Device Code Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% MBR 745 45 MBR 750 50 MBR 760 60 MBR 790 90 MBR 7100 100 MBR 7150 150 Maximum Recurrent Peak Reverse Voltage VRRM MBR 735 35 Maximum RMS Voltage VRMS 24 31 35 42 63 70 105 V Maximum DC Blocking Voltage VDC 35 45 50 60 90 100 150 V Maximum Average Forward Rectified Current IF(AV) 7.5 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20KHz) IFRM 15 A Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC method) IFSM 150 A Peak Repetitive Reverse Surge Current (Note 1) IRRM 1.0 - 0.75 0.92 0.95 VF 0.57 0.65 0.82 0.92 0.84 - - - 0.72 - - - Type Number Maximum Instantaneous Forward Voltage at (Note 2) IF=7.5A, T A=25℃ IF=7.5A, T A=125℃ IF=15A, T A=25℃ IF=15A, T A=125℃ Maximum Instantaneous Reverse Current @ T A=25 ℃ at Rated DC Blocking Voltage @ T A=125 ℃ Symbol IR Voltage Rate of Change (Rated V R) dV/dt Typical Junction Capacitance Cj RθJC Typical Thermal Resistance Operating Junction Temperature Range Storage Temperature Range Units V 0.5 A 0.1 15 10 360 280 V mA 5 10000 V/us 200 160 pF RθJA 5 15 TJ - 65 to + 150 O - 65 to + 175 O TSTG O C/W C C Note 1: 2.0uS Pulse Width, f=1.0KHz Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle Version:G11 RATINGS AND CHARACTERISTIC CURVES (MBR735 THRU MBR7150) FIG.1- FORWARD CURRENT DERATING CURVE FIG. 2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 175 RESISTIVE OR INDUCTIVELOAD 8 PEAK FORWARD SURGE CURRENT (A) AVERAGE FORWARD A CURRENT (A) 10 6 4 2 MBR735-MBR745 MBR750-MBR7150 8.3mS Single Half Sine Wave JEDEC Method 150 125 100 75 50 0 25 0 50 100 150 1 10 NUMBER OF CYCLES AT 60 Hz CASE TEMPERATURE (oC) FIG. 4- TYPICAL REVERSE CHARACTERISTICS FIG. 3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISRICS 100 MBR735-745 MBR750-7150 Pulse Width=300uS 1% Duty Cycle TA=125℃ 1 TA=25℃ 0.1 MBR735-MBR745 MBR750-MBR760 MBR790-MBR7150 INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS FORWARD CURRENT (A) 100 10 10 TA=125℃ 1 0.1 TA=75℃ 0.01 TA=25℃ 0.001 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 FORWARD VOLTAGE (V) 1 0 1.1 1.2 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 5- TYPICAL JUNCTION CAPACITANCE FIG. 6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS 10000 100 TA=25℃ f=1.0MHz Vsig=50mVp-p TRANSIENT THERMAL IMPEDANCE (℃/W) JUNCTION CAPACITANCE (pF) A 100 1000 10 100 MBR735-MBR745 MBR750-MBR760 MBR790-MBR7150 10 0.1 1 1 0.1 10 REVERSE VOLTAGE (V) 100 0.01 0.1 1 10 T-PULSE DURATION. (sec) Version:G11 100