AP10N012H
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
D
▼ Simple Drive Requirement
▼ Lower On-resistance
100V
RDS(ON)
12.5mΩ
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
48A
S
Description
AP4604 series
AP10N012
series
are
arefrom
fromAdvanced
AdvancedPower
Power innovated
innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-220 package is widely preferred for all commercialindustrial package
TO-252
through is hole
widely
applications.
preferred for
Theall low
commercialthermal
resistance surface
industrial
and lowmount
package
applications
cost contribute
usingtoinfrared
the worldwide
reflow
popular
package.
technique
and suited for high current application due to the
low connection resistance.
G
D
S
TO-252(H)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
.
Parameter
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Drain Current, VGS @ 10V
48
A
ID@TC=100℃
Drain Current, VGS @ 10V
30
A
160
A
52
W
2
W
128
mJ
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
PD@TA=25℃
Total Power Dissipation
4
3
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
Value
Units
2.4
℃/W
62
℃/W
1
201708211
AP10N012H
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
100
-
-
V
VGS=10V, ID=30A
-
-
12.5
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
5
V
gfs
Forward Transconductance
VDS=5V, ID=30A
-
30
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=30A
-
41
65.6
nC
Qgs
Gate-Source Charge
VDS=50V
-
14
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
16
-
nC
td(on)
Turn-on Delay Time
VDS=50V
-
16
-
ns
tr
Rise Time
ID=30A
-
85
-
ns
td(off)
Turn-off Delay Time
RG=7.5Ω
-
30
-
ns
tf
Fall Time
VGS=10V
-
70
-
ns
Ciss
Input Capacitance
VGS=0V
-
2250 3600
pF
Coss
Output Capacitance
VDS=50V
-
710
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
25
-
pF
Rg
Gate Resistance
-
1
2
Ω
Min.
Typ.
IS=30A, VGS=0V
-
-
1.3
V
.
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=30A, VGS=0V
-
51
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
62
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
o
3.Starting Tj=25 C , VDD=50V , L=1mH , RG=25Ω, VGS=10V
4.Surface mounted on 1 in 2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP10N012H
160
100
o
120
V G =6.0V
80
10V
9.0V
8.0V
7.0V
V G =6.0V
80
ID , Drain Current (A)
ID , Drain Current (A)
T C =150 o C
10V
9.0V
8.0V
7.0V
T C = 25 C
60
40
40
20
0
0
0
2
4
6
8
0
10
Fig 1. Typical Output Characteristics
4
6
8
10
Fig 2. Typical Output Characteristics
24
2.4
I D =30A
I D =30A
V G =10V
T C =25 o C
16
.
Normalized RDS(ON)
2.0
20
RDS(ON) (mΩ)
2
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
1.6
1.2
12
0.8
0.4
8
4
5
6
7
8
9
-100
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
60
I D =250uA
50
Normalized VGS(th)
1.6
IS(A)
40
30
T j =150 o C
T j =25 o C
1.2
0.8
20
0.4
10
0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-100
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP10N012H
f=1.0MHz
4000
I D =30A
V DS =50V
10
3000
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
C iss
2000
4
1000
2
C oss
C rss
0
0
0
10
20
30
40
1
50
21
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
61
81
101
121
Fig 8. Typical Capacitance Characteristics
1000
Operation in this area
limited by RDS(ON)
10
10us
1
.
100us
1ms
10ms
DC
0.1
T C =25 o C
Single Pulse
Normalized Thermal Response (Rthjc)
1
100
ID (A)
41
V DS ,Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.01
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
80
100
V DS =5V
ID , Drain Current (A)
ID , Drain Current (A)
80
60
40
60
40
T j =150 o C
20
o
T j =25 C
20
o
T j = -55 C
0
0
25
50
75
100
T C , Case Temperature (
125
o
C)
Fig 11. Drain Current v.s. Case
Temperature
150
0
2
4
6
8
10
V GS , Gate-to-Source Voltage (V)
Fig 12. Transfer Characteristics
4
AP10N012H
80
80
o
PD, Power Dissipation(W)
T j =25 C
RDS(ON) (mΩ)
60
40
20
60
40
20
V GS =10V
0
0
0
20
40
60
0
80
50
100
150
T C , Case Temperature( o C)
I D , Drain Current (A)
Fig 13. Typ. Drain-Source on State
Resistance
Fig 14. Total Power Dissipation
.
5
AP10N012H
MARKING INFORMATION
Part Number
10N012
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
6