NEC NESG2031M16 Npn sige rf transistor for low noise, high-gain amplification 6-pin lead-less minimold (m16, 1208 pkg) Datasheet

DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
NESG2031M16
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
FEATURES
• The device is an ideal choice for low noise, high-gain amplification
NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.2 GHz
• Maximum stable power gain: MSG = 21.5 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 2 GHz
• High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V
• 6-pin lead-less minimold (M16, 1208 PKG)
<R>
ORDERING INFORMATION
Part Number
Order Number
NESG2031M16
NESG2031M16-A
NESG2031M16-T3
Package
Quantity
6-pin lead-less minimold
50 pcs
• 8 mm wide embossed taping
(M16, 1208 PKG)
(Non reel)
• Pin 1 (Collector), Pin 6 (Emitter) face the
(Pb-Free)
NESG2031M16-T3-A
Supplying Form
perforation side of the tape
10 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
13.0
V
Collector to Emitter Voltage
VCEO
5.0
V
Emitter to Base Voltage
VEBO
1.5
V
IC
35
mA
175
mW
Collector Current
Total Power Dissipation
Ptot
Note
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
2
Note Mounted on 1.08 cm × 1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PU10394EJ03V0DS (3rd edition)
Date Published September 2009 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2003, 2009
NESG2031M16
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
−
−
100
nA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
−
−
100
nA
VCE = 2 V, IC = 5 mA
130
190
260
−
VCE = 3 V, IC = 20 mA, f = 2 GHz
20
25
−
GHz
⏐S21e⏐
VCE = 3 V, IC = 20 mA, f = 2 GHz
16.0
18.0
−
dB
Noise Figure (1)
NF
VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
−
0.8
1.1
dB
Noise Figure (2)
NF
VCE = 2 V, IC = 5 mA, f = 5.2 GHz,
ZS = ZSopt, ZL = ZLopt
−
1.3
−
dB
Associated Gain (1)
Ga
VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
15.0
17.0
−
dB
Associated Gain (2)
Ga
VCE = 2 V, IC = 5 mA, f = 5.2 GHz,
ZS = ZSopt, ZL = ZLopt
−
10.0
−
dB
VCB = 2 V, IE = 0 mA, f = 1 MHz
−
0.15
0.25
pF
VCE = 3 V, IC = 20 mA, f = 2 GHz
19.0
21.5
−
dB
−
13
−
dBm
−
23
−
dBm
DC Current Gain
hFE
Note 1
RF Characteristics
Gain Bandwidth Product
fT
2
Insertion Power Gain
Note 2
Reverse Transfer Capacitance
Cre
Maximum Stable Power Gain
MSG
Gain 1 dB Compression Output Power
Note 3
PO (1 dB)
VCE = 3 V, IC (set) = 20 mA (RF OFF),
f = 2 GHz, ZS = ZSopt, ZL = ZLopt
Output 3rd Order Intercept Point
OIP3
VCE = 3 V, IC (set) = 20 mA (RF OFF),
f = 2 GHz, ZS = ZSopt, ZL = ZLopt
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MSG =
S21
S12
hFE CLASSIFICATION
<R>
2
Rank
FB/YFB
Marking
zF
hFE Value
130 to 260
Data Sheet PU10394EJ03V0DS
NESG2031M16
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Mounted on Glass Epoxy PCB
(1.08 cm2 × 1.0 mm (t) )
250
200
175
150
100
50
0
25
50
75
100
125
Reverse Transfer Capacitance Cre (pF)
Total Power Dissipation Ptot (mW)
300
0.3
f = 1 MHz
0.2
0.1
0
150
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 1 V
10
1
0.1
0.01
0.001
0.0001
0.4
8
10
10
1
0.1
0.01
0.001
0.5
0.6
0.7
0.8
0.9
1.0
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
35
VCE = 3 V
200 μ A
180 μ A
160 μ A
140 μ A
120 μ A
30
Collector Current IC (mA)
10
1
0.1
0.01
0.001
0.0001
0.4
6
VCE = 2 V
Base to Emitter Voltage VBE (V)
100
4
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Collector Current IC (mA)
Collector Current IC (mA)
100
2
Collector to Base Voltage VCB (V)
Ambient Temperature TA (°C)
Collector Current IC (mA)
<R>
25
20
100 μ A
15
80 μ A
10
60 μ A
40 μ A
5
IB = 20 μ A
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
Collector to Emitter Voltage VCE (V)
Base to Emitter Voltage VBE (V)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10394EJ03V0DS
3
NESG2031M16
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
1 000
100
10
0.1
VCE = 2 V
DC Current Gain hFE
DC Current Gain hFE
VCE = 1 V
1
10
100
100
10
0.1
Collector Current IC (mA)
1 000
DC Current Gain hFE
VCE = 3 V
100
1
10
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
4
10
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
10
0.1
1
Data Sheet PU10394EJ03V0DS
100
NESG2031M16
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
Gain Bandwidth Product fT (GHz)
VCE = 1 V,
f = 2 GHz
25
20
15
10
5
0
1
10
VCE = 3 V,
f = 2 GHz
10
5
10
100
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Gain Bandwidth Product fT (GHz)
10
5
10
100
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
0
1
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
15
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
15
35
VCE = 1 V,
IC = 10 mA
30
25
MSG
MAG
20
15
|S21e|2
10
5
0
0.1
1
10
100
Collector Current IC (mA)
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
40
VCE = 2 V,
IC = 10 mA
35
30
MSG
MAG
20
MAG
15
2
MSG
|S21e|
10
5
0
0.1
20
Collector Current IC (mA)
20
25
25
Collector Current IC (mA)
30
25
VCE = 2 V,
f = 2 GHz
0
1
100
1
10
100
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Gain Bandwidth Product fT (GHz)
30
Frequency f (GHz)
40
VCE = 3 V,
IC = 10 mA
35
30
MSG
MAG
25
20
MAG
15
2
MSG
|S21e|
10
5
0
0.1
1
10
100
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10394EJ03V0DS
5
NESG2031M16
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
VCE = 1 V,
f = 1 GHz
25
MSG
20
MAG
|S21e|2
15
10
5
0
1
10
100
30
25
MSG
MAG
20
15
|S21e|2
10
5
0
1
10
100
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
VCE = 1 V,
f = 3 GHz
25
MSG
20
MAG
15
2
|S21e|
10
5
0
1
10
100
20
MSG
MAG
15
10
|S21e|2
5
0
1
10
100
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
MSG
10
5
1
25
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
15
0
VCE = 1 V,
f = 5 GHz
Collector Current IC (mA)
|S21e|2
20
30
Collector Current IC (mA)
VCE = 2 V,
f = 1 GHz
25
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current IC (mA)
10
100
30
VCE = 2 V,
f = 2 GHz
25
MSG
MAG
20
|S21e|2
15
10
5
0
1
10
Collector Current IC (mA)
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
6
VCE = 1 V,
f = 2 GHz
Collector Current IC (mA)
30
Insertion Power Gain |S21e|2 (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Data Sheet PU10394EJ03V0DS
100
NESG2031M16
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
VCE = 2 V,
f = 3 GHz
MSG
MAG
20
15
|S21e|2
10
5
0
1
10
100
Insertion Power Gain |S21e|2 (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
25
20
MSG
MAG
15
10
|S21e|2
5
0
1
10
100
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
VCE = 3 V,
f = 1 GHz
MSG
20
|S21e|
15
2
10
5
0
VCE = 2 V,
f = 5 GHz
Collector Current IC (mA)
30
25
30
Collector Current IC (mA)
1
10
100
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
25
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
30
VCE = 3 V,
f = 2 GHz
25
MSG
MAG
20
|S21e|2
15
10
5
0
10
1
100
Collector Current IC (mA)
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
VCE = 3 V,
f = 3 GHz
25
MSG
MAG
20
15
|S21e|2
10
5
0
1
10
100
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
VCE = 3 V,
f = 5 GHz
25
20
MSG
MAG
15
10
Collector Current IC (mA)
|S21e|2
5
0
1
10
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10394EJ03V0DS
7
NESG2031M16
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
20
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
50
50
20
40
30
Pout
IC
5
20
10
0
–5
–30
–25
–20
–15
–10
10
IC
5
10
–20
–5
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
50
40
Pout
30
IC
5
20
10
0
–15
–10
–5
0
0
5
Output Power Pout (dBm)
VCE = 3 V, f = 5.2 GHz,
Icq = 20 mA
15
10
0
0
50
20
Collector Current IC (mA)
Output Power Pout (dBm)
–10
Input Power Pin (dBm)
VCE = 3 V, f = 3 GHz,
Icq = 20 mA
40
15
Pout
10
30
IC
5
20
10
0
–5
–15
Input Power Pin (dBm)
–10
–5
0
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
8
–15
Input Power Pin (dBm)
20
–5
–20
20
0
–5
–25
0
–5
30
Pout
Data Sheet PU10394EJ03V0DS
5
0
10
Collector Current IC (mA)
10
40
15
Collector Current IC (mA)
15
Output Power Pout (dBm)
VCE = 3 V, f = 2 GHz,
Icq = 20 mA
Collector Current IC (mA)
Output Power Pout (dBm)
VCE = 3 V, f = 1 GHz,
Icq = 20 mA
NESG2031M16
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
4
Ga
3
20
2
15
10
1
NF
10
5
100
20
2
15
1
0
1
10
VCE = 2 V,
f = 1 GHz
10
5
100
Collector Current IC (mA)
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
30
5
30
4
25
4
25
3
20
Ga
2
15
10
NF
0
1
VCE = 1 V,
f = 2 GHz
10
Noise Figure NF (dB)
5
1
3
20
Ga
2
15
1
10
NF
0
5
100
1
VCE = 2 V,
f = 2 GHz
10
5
100
Collector Current IC (mA)
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
25
5
25
4
20
4
20
3
15
Ga
10
2
NF
1
0
5
VCE = 1 V,
f = 5.2 GHz
1
10
0
100
Noise Figure NF (dB)
Noise Figure NF (dB)
25
3
NF
Associated Gain Ga (dB)
Noise Figure NF (dB)
0
1
VCE = 1 V,
f = 1 GHz
Ga
3
15
Ga
10
2
NF
1
0
Associated Gain Ga (dB)
25
Associated Gain Ga (dB)
4
30
5
Associated Gain Ga (dB)
5
Noise Figure NF (dB)
30
Associated Gain Ga (dB)
5
Associated Gain Ga (dB)
Noise Figure NF (dB)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
VCE = 2 V,
f = 5.2 GHz
1
Collector Current IC (mA)
10
0
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10394EJ03V0DS
9
NESG2031M16
30
5
30
4
25
4
25
Ga
3
20
2
15
10
1
NF
0
1
VCE = 3 V,
f = 1 GHz
10
Noise Figure NF (dB)
5
20
3
Ga
2
15
10
1
NF
5
100
0
1
VCE = 3 V,
f = 2 GHz
10
Associated Gain Ga (dB)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Associated Gain Ga (dB)
Noise Figure NF (dB)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
100
Collector Current IC (mA)
Collector Current IC (mA)
5
25
4
20
3
15
Ga
10
2
NF
1
0
5
Associated Gain Ga (dB)
Noise Figure NF (dB)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
VCE = 3 V,
f = 5.2 GHz
1
10
0
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
<R>
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import
of the parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.necel.com/microwave/en/
10
Data Sheet PU10394EJ03V0DS
NESG2031M16
PACKAGE DIMENSIONS
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) (UNIT: mm)
1.0±0.05
3
0.15±0.05
6
5
0.125+0.1
–0.05
0.5±0.05
4
2
0.4
0.4
0.8
zF
1.2+0.07
–0.05
1
0.8+0.07
–0.05
PIN CONNECTIONS
1.
2.
3.
4.
5.
6.
Collector
Emitter
Emitter
Base
Emitter
Emitter
Caution All four Emitter-pins should be connected to PWB in order to obtain better Electrical performance
and heat sinking.
Data Sheet PU10394EJ03V0DS
11
NESG2031M16
• The information in this document is current as of September, 2009. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products
and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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M8E0904E