Preliminary Data Sheet N0601N R07DS0557EJ0100 Rev.1.00 Nov 07, 2011 N-CHANNEL MOSFET FOR SWITCHING Description The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.2 mΩ MAX. (VGS = 10 V, ID = 50 A) • Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V) • High current ID(DC) = ±100 A • RoHS Compliant Ordering Information Part No. N0601N-ZK-E1-AY ∗1 Lead Plating Pure Sn (Tin) N0601N-ZK-E2-AY ∗1 Packing Tape 800 p/reel Package TO-263 1.39 g TYP. Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) Absolute Maximum Ratings (TA = 25°C, all terminals are connected) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) ∗1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current ∗2 Single Avalanche Energy ∗2 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS Ratings 60 ±20 ±100 ±400 156 1.5 150 −55 to +150 55 300 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case (Drain) Thermal Resistance Channel to Ambient Thermal Resistance ∗2 Rth(ch-C) Rth(ch-A) 0.80 83.3 °C/W °C/W Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1% ∗ 2. Starting Tch = 25°C, RG = 25 Ω, VDD = 30 V, VGS = 20 → 0 V, L = 100 μH R07DS0557EJ0100 Rev.1.00 Nov 07, 2011 Page 1 of 6 N0601N Chapter Title Electrical Characteristics (TA = 25°C, all terminals are connected) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance ∗1 Symbol IDSS IGSS VGS(off) | yfs | MIN. TYP. MAX. 1 ±100 4.0 Drain to Source On-state Resistance ∗1 RDS(on) 3.3 4.2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss 7730 560 290 pF pF pF VDS = 25 V, VGS = 0 V, f = 1 MHz Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage ∗1 Reverse Recovery Time td(on) tr td(off) tf QG QGS QGD VF(S-D) trr 35 12 76 14 133 38 38 VDD = 30 V, ID = 50 A, VGS = 10 V, RG = 0 Ω 44 ns ns ns ns nC nC nC V ns Reverse Recovery Charge Qrr 61 nC 2.0 35 1.5 Unit μA nA V S mΩ Test Conditions VDS = 60 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 50 A VGS = 10 V, ID = 50 A VDD = 48 V, VGS = 10 V, ID = 100 A IF = 100 A, VGS = 0 V IF = 50 A, VGS = 0 V, di/dt = 100 A/μ s ∗ Note: 1. Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L 50 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% BVDSS IAS VDS ID VDS 0 10% 10% tr td(off) Wave Form τ VDD Starting Tch 90% VDS VGS 0 τ = 1 μs Duty Cycle ≤ 1% td(on) ton tf toff TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω R07DS0557EJ0100 Rev.1.00 Nov 07, 2011 RL VDD Page 2 of 6 N0601N Chapter Title Typical Characteristics (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE TOTAL POWER DISSIPATION vs. OPERATING AREA CASE TEMPERATURE 200 120 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 140 100 80 60 40 20 150 100 50 0 0 0 25 50 75 100 125 150 0 175 TC - Case Temperature - °C 25 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 ID - Drain Current - A RDS(on) Limited PW = 300 µs 1 ms 100 10 ms 10 Power Dissipation Limited 1 TC = 25°C Single Pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 1000 Single pulse Rth(ch-A) = 83.3°C/W 100 10 Rth(ch-C) = 0.80°C/W 1 0.1 0.01 0.1 m 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s R07DS0557EJ0100 Rev.1.00 Nov 07, 2011 Page 3 of 6 N0601N Chapter Title DRAIN CURRENT vs. FORWARD TRANSFER CHARACTERISTICS DRAIN TO SOURCE VOLTAGE 100 VGS = 10 V 300 TA = 125°C 75°C 25°C −25°C 10 ID - Drain Current - A ID - Drain Current - A 400 200 100 Pulsed 0 1 0.1 0.01 VDS = 10 V Pulsed 0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 3 4 5 GATE TO SOURCE CUT-OFF VOLTAGE vs. FORWARD TRANSFER ADMITTANCE vs. DRAIN CHANNEL TEMPERATURE CURRENT 4 100 3 2 1 VDS = 10 V ID = 1.0 mA 0 -50 0 50 100 150 TA = 125°C 75°C 25°C −25°C 10 1 0.1 VDS = 10 V Pulsed 0.01 0.01 0.1 1 10 100 Tch - Channel Temperature - °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 10 VGS = 10 V 8 6 4 2 Pulsed 0 1 10 100 ID - Drain Current - A R07DS0557EJ0100 Rev.1.00 Nov 07, 2011 1000 RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ 2 VGS - Gate to Source Voltage - V | yfs | - Forward Transfer Admittance - S VGS(off) - Gate to Source Cut-off Voltage - V VDS - Drain to Source Voltage - V 1 25 ID = 50 A Pulsed 20 15 10 5 0 0 5 10 15 20 VGS - Gate to Source Voltage - V Page 4 of 6 N0601N Chapter Title DRAIN TO SOURCE ON-STATE RESISTANCE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 8 100000 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ vs. CHANNEL TEMPERATURE 6 4 2 VGS = 10 V ID = 50 A Pulsed 0 50 100 150 1000 Coss VGS = 0 V f = 1.0 MHz Crss 0.1 1 10 100 VDS - Drain to Source Voltage - V Tch - Channel Temperature - °C SWITCHING CHARACTERISTICS DYNAMIC INPUT CHARACTERISTICS 1000 14 VGS - Gate to Source Voltage - V td (on), tr, td (off), tf - Switching Time - ns Ciss 100 0.01 0 -50 10000 tf td(off) 100 td(on) 10 tr VDD = 30 V VGS = 10 V RG = 0 Ω 12 VDD = 12 V 30 V 48 V 10 8 6 4 2 ID = 100 A 0 1 0.1 1 10 0 100 20 40 60 80 100 120 140 QG - Gate Charge - nC ID - Drain Current - A REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 1000 100 10 trr - Reverse Recovery Time - ns IF - Diode Forward Current - A VGS = 10 V 0V 1 0.1 Pulsed 0.01 0 0.4 0.8 1.2 VF(S-D) - Source to Drain Voltage - V R07DS0557EJ0100 Rev.1.00 Nov 07, 2011 1.6 10 VGS = 0 V di/dt = 100 A/µs 1 0.1 1 10 100 IF - Diode Forward Current - A Page 5 of 6 N0601N Chapter Title Package Drawing (Unit: mm) TO-263 4.8 MAX. 1.2±0.3 10.0±0.3 7.8 MIN. 1.3±0.2 0 to 0.25 2.00 1.27±0.2 2.4±0.2 0.5±0.2 2.54 1 0.8±0.1 2 2.3±0.3 9.2±0.3 15.3±0.5 6.7±0.3 4 0.254 3 1. Gate 2. Drain 3. Source 4. Fin (Drain) Equivalent Circuit Drain Body Diode Gate Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. R07DS0557EJ0100 Rev.1.00 Nov 07, 2011 Page 6 of 6 Revision History N0601N Data Sheet Rev. Date Page 1.00 Nov 07, 2011 − Description Summary First Edition Issued All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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