Kexin DTA114TM Digital transistor Datasheet

Transistors
SMD Type
Digital Transistors
DTA114TM
Features
PNP Epitaxial Planar Silicon Transistor (Resistor Built-In Typ.)
Built-In Bias Resistors Enable The Configuration of An Inverter
Circuit Without Connecting External Input Resistors
(See Equivalent Circuit).
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-100
mA
Collector Power Dissipation
PC
150
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
BVCBO
IC = -50 A
-50
Collector-Emitter Breakdown Voltage
BVCEO
IC = -1mA
-50
V
Emitter-Base Breakdown Voltage
BVEBO
IE = -50 A
-5
V
ICBO
VCB = -50V
IEBO
VEB = -4V
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
V
-0.5
-0.5
VCE(sat) IC = -10mA , IB = -1mA
hFE
Input Resistance
R1
Transistion Frequency
fT *
VCE = -5V , IC = -1mA
-0.3
100
7
VCE = -10V , IE = 5mA , f = 100MHz
A
250
600
10
13
250
A
V
k
MHz
* Characteristics of built-in transistor
Marking
Marking
94
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1
Transistors
SMD Type
DTA114TM
Equivalent Circuit
Electrical Characteristics Curves
2
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