MOTOROLA MUN5333DW1T1 Dual bias resistor transistor Datasheet

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by MUN5311DW1T1/D
SEMICONDUCTOR TECHNICAL DATA
NPN and PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
Motorola Preferred Devices
The BRT (Bias Resistor Transistor) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base resistor and a
base–emitter resistor. These digital transistors are designed to replace a single
device and its external resistor bias network. The BRT eliminates these
individual components by integrating them into a single device. In the
MUN5311DW1T1 series, two complementary BRT devices are housed in the
SOT–363 package which is ideal for low power surface mount applications
where board space is at a premium.
6
5
4
1
2
3
CASE 419B–01, STYLE 1
SOT–363
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
(3)
(2)
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
R1
(1)
R2
Q1
Q2
R2
(4)
R1
(5)
(6)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2, – minus sign for Q2 (PNP) omitted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
Value
Unit
VCBO
VCEO
50
Vdc
50
Vdc
IC
100
mAdc
RθJA
833
°C/W
TJ, Tstg
PD
– 65 to +150
°C
*150
mW
THERMAL CHARACTERISTICS
Thermal Resistance — Junction-to-Ambient (surface mounted)
Operating and Storage Temperature Range
Total Package Dissipation @ TA = 25°C(1)
DEVICE MARKING AND RESISTOR VALUES: MUN5311DW1T1 SERIES
Device
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1(2)
MUN5316DW1T1(2)
MUN5330DW1T1(2)
MUN5331DW1T1(2)
MUN5332DW1T1(2)
MUN5333DW1T1(2)
MUN5334DW1T1(2)
MUN5335DW1T1(2)
Marking
R1 (K)
R2 (K)
11
12
13
14
15
16
30
31
32
33
34
35
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
10
22
47
47
∞
∞
1.0
2.2
4.7
47
47
47
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
Small–Signal
Transistors, FETs and Diodes Device Data
Motorola
Motorola, Inc.
1997
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2, – minus sign for Q2 (PNP) omitted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
—
—
100
nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
—
—
500
nAdc
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
mAdc
Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0)
V(BR)CBO
50
—
—
Vdc
Collector-Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
—
—
Vdc
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
—
—
—
—
—
—
—
—
—
—
—
—
VCE(sat)
—
—
0.25
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
OFF CHARACTERISTICS
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
ON CHARACTERISTICS(3)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MUN5330DW1T1/MUN5331DW1T1
(IC = 10 mA, IB = 1 mA) MUN5315DW1T1/MUN5316DW1T1
MUN5332DW1T1/MUN5333DW1T1/MUN5334DW1T1
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ)
VOL
MUN5311lDW1T1
MUN5312DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
MUN5313DW1T1
Vdc
Vdc
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2, – minus sign for Q2 (PNP) omitted)
(Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
VOH
4.9
—
—
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
kΩ
R1/R2
0.8
0.17
—
0.8
0.055
0.38
0.038
1.0
0.21
—
1.0
0.1
0.47
0.047
1.2
0.25
—
1.2
0.185
0.56
0.056
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ)
MUN5330DW1T1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ)
MUN5315DW1T1
MUN5316DW1T1
MUN5333DW1T1
Input Resistor
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
Resistor Ratio MUN5311DW1T1/MUN5312DW1T1/MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1/MUN5316DW1T1
MUN5330DW1T1/MUN5331DW1T1/MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
PD , POWER DISSIPATION (MILLIWATTS)
250
200
150
100
50
0
– 50
RθJA = 833°C/W
0
50
100
TA, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
1
1000
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5311DW1T1 NPN TRANSISTOR
TA = –25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
IC, COLLECTOR CURRENT (mA)
VCE = 10 V
TA = 75°C
25°C
–25°C
100
10
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
100
2
1
0
25°C
75°C
f = 1 MHz
IE = 0 V
TA = 25°C
IC, COLLECTOR CURRENT (mA)
Cob , CAPACITANCE (pF)
4
3
100
TA = –25°C
10
1
0.1
0.01
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
VO = 5 V
0.001
0
1
2
5
6
7
3
4
Vin, INPUT VOLTAGE (VOLTS)
8
9
10
Figure 5. Output Current versus Input Voltage
Figure 4. Output Capacitance
10
V in , INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA = –25°C
25°C
75°C
1
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 6. Input Voltage versus Output Current
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1000
1
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5311DW1T1 PNP TRANSISTOR
IC/IB = 10
TA = –25°C
0.1
25°C
75°C
0.01
0
20
100
–25°C
IC, COLLECTOR CURRENT (mA)
10
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
50
1
100
3
2
1
0
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
100
25°C
75°C
f = 1 MHz
lE = 0 V
TA = 25°C
IC, COLLECTOR CURRENT (mA)
Cob , CAPACITANCE (pF)
TA = 75°C
25°C
10
40
4
0
VCE = 10 V
TA = –25°C
10
1
0.1
0.01
0.001
VO = 5 V
0
1
2
6
7
3
4
5
Vin, INPUT VOLTAGE (VOLTS)
8
9
10
Figure 10. Output Current versus Input
Voltage
100
V in , INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA = –25°C
10
25°C
75°C
1
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 11. Input Voltage versus Output Current
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
1000
1
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5312DW1T1 NPN TRANSISTOR
IC/IB = 10
25°C
TA = –25°C
0.1
75°C
0.01
TA = 75°C
25°C
–25°C
100
10
0.001
0
20
40
50
10
1
100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
4
100
f = 1 MHz
IE = 0 V
TA = 25°C
3
IC, COLLECTOR CURRENT (mA)
Cob , CAPACITANCE (pF)
VCE = 10 V
2
1
75°C
25°C
TA = –25°C
10
1
0.1
0.01
VO = 5 V
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 14. Output Capacitance
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
8
10
Figure 15. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA = –25°C
10
25°C
75°C
1
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output
Current
6
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1000
10
IC/IB = 10
1
25°C
TA = –25°C
75°C
0.1
0.01
VCE = 10 V
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5312DW1T1 PNP TRANSISTOR
TA = 75°C
25°C
–25°C
100
10
0
20
IC, COLLECTOR CURRENT (mA)
40
1
50
10
Figure 17. VCE(sat) versus IC
Figure 18. DC Current Gain
100
3
2
1
0
25°C
75°C
f = 1 MHz
lE = 0 V
TA = 25°C
TA = –25°C
IC, COLLECTOR CURRENT (mA)
Cob , CAPACITANCE (pF)
4
0
100
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
10
Figure 19. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
8
9
10
Figure 20. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA = –25°C
10
25°C
75°C
1
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 21. Input Voltage versus Output Current
Motorola Small–Signal Transistors, FETs and Diodes Device Data
7
10
1000
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5313DW1T1 NPN TRANSISTOR
IC/IB = 10
1
25°C
TA = –25°C
75°C
0.1
0.01
0
TA = 75°C
25°C
–25°C
100
10
50
20
40
IC, COLLECTOR CURRENT (mA)
VCE = 10 V
1
Figure 22. VCE(sat) versus IC
Figure 23. DC Current Gain
1
100
f = 1 MHz
IE = 0 V
TA = 25°C
0.6
0.4
TA = –25°C
10
1
0.1
0.01
0.2
0
25°C
75°C
IC, COLLECTOR CURRENT (mA)
Cob , CAPACITANCE (pF)
0.8
100
10
IC, COLLECTOR CURRENT (mA)
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
VO = 5 V
0.001
50
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
8
10
Figure 25. Output Current versus Input Voltage
Figure 24. Output Capacitance
100
V in , INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA = –25°C
10
25°C
75°C
1
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 26. Input Voltage versus Output Current
8
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
1000
IC/IB = 10
TA = –25°C
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5313DW1T1 PNP TRANSISTOR
25°C
75°C
0.1
0.01
0
10
20
30
IC, COLLECTOR CURRENT (mA)
TA = 75°C
25°C
–25°C
100
10
40
1
10
IC, COLLECTOR CURRENT (mA)
Figure 27. VCE(sat) versus IC
Figure 28. DC Current Gain
1
100
Cob , CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
0.8
0.6
0.4
0.2
0
0
100
–25°C
10
1
0.1
0.01
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
25°C
TA = 75°C
Figure 29. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
8
9
10
Figure 30. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA = –25°C
25°C
75°C
10
1
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 31. Input Voltage versus Output Current
Motorola Small–Signal Transistors, FETs and Diodes Device Data
9
1
300
IC/IB = 10
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5314DW1T1 NPN TRANSISTOR
TA = –25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
25°C
200
–25°C
150
100
50
0
80
TA = 75°C
VCE = 10
250
2
1
4
6
Figure 32. VCE(sat) versus IC
100
f = 1 MHz
lE = 0 V
TA = 25°C
3
TA = 75°C
IC, COLLECTOR CURRENT (mA)
3.5
Cob , CAPACITANCE (pF)
90 100
Figure 33. DC Current Gain
4
2.5
2
1.5
1
0.5
0
8 10 15 20 40 50 60 70 80
IC, COLLECTOR CURRENT (mA)
0
2
4
6 8 10 15 20 25 30 35
VR, REVERSE BIAS VOLTAGE (VOLTS)
40
Figure 34. Output Capacitance
45
50
25°C
–25°C
10
VO = 5 V
1
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
8
10
Figure 35. Output Current versus Input Voltage
10
V in , INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA = –25°C
25°C
75°C
1
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 36. Input Voltage versus Output Current
10
Motorola Small–Signal Transistors, FETs and Diodes Device Data
180
1
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5314DW1T1 PNP TRANSISTOR
TA = –25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
25°C
140
–25°C
120
100
80
60
40
20
0
80
TA = 75°C
VCE = 10 V
160
1
2
4
6
Figure 37. VCE(sat) versus IC
100
TA = 75°C
3.5
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
4
Cob , CAPACITANCE (pF)
80 90 100
Figure 38. DC Current Gain
4.5
3
2.5
2
1.5
1
0.5
0
8 10 15 20 40 50 60 70
IC, COLLECTOR CURRENT (mA)
0
2
4
6 8 10 15 20 25 30 35 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
45
50
Figure 39. Output Capacitance
25°C
–25°C
10
VO = 5 V
1
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
8
10
Figure 40. Output Current versus Input Voltage
10
V in , INPUT VOLTAGE (VOLTS)
VO = 0.2 V
25°C
TA = –25°C
75°C
1
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 41. Input Voltage versus Output Current
Motorola Small–Signal Transistors, FETs and Diodes Device Data
11
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5315DW1T1
HFE, DC CURRENT GAIN (NORMALIZED)
1000
HFE, DC CURRENT GAIN (NORMALIZED)
1000
TA = 25°C
VCE = 10 V
VCE = 5.0 V
100
TA = 25°C
VCE = 10 V
VCE = 5.0 V
100
1.0
10
IC, COLLECTOR CURRENT (mA)
100
1.0
Figure 42. DC Current Gain — PNP
10
IC, COLLECTOR CURRENT (mA)
100
Figure 43. DC Current Gain — NPN
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5316DW1T1
HFE, DC CURRENT GAIN (NORMALIZED)
1000
HFE, DC CURRENT GAIN (NORMALIZED)
1000
TA = 25°C
VCE = 10 V
VCE = 5.0 V
100
VCE = 10 V
VCE = 5.0 V
100
1.0
10
IC, COLLECTOR CURRENT (mA)
Figure 44. DC Current Gain — PNP
12
TA = 25°C
100
1.0
10
IC, COLLECTOR CURRENT (mA)
100
Figure 45. DC Current Gain — NPN
Motorola Small–Signal Transistors, FETs and Diodes Device Data
INFORMATION FOR USING THE SOT–363 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINTS FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOT–363
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
0.65 mm 0.65 mm
0.4 mm (min)
0.5 mm (min)
1.9 mm
SOT–363 POWER DISSIPATION
The power dissipation of the SOT–363 is a function of the
pad size. This can vary from the minimum pad size for
soldering to the pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device
junction to ambient; and the operating temperature, TA.
Using the values provided on the data sheet, PD can be
calculated as follows:
PD =
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 150 milliwatts.
PD =
150°C – 25°C
= 150 milliwatts
833°C/W
The 833°C/W for the SOT–363 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 150 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–363 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference should be a maximum of 10°C.
• The soldering temperature and time should not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
13
SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass
or stainless steel with a typical thickness of 0.008 inches.
The stencil opening size for the surface mounted package
should be the same as the pad size on the printed circuit
board, i.e., a 1:1 registration.
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of control
settings that will give the desired heat pattern. The operator
must set temperatures for several heating zones, and a
figure for belt speed. Taken together, these control settings
make up a heating “profile” for that particular circuit board.
On machines controlled by a computer, the computer
remembers these profiles from one operating session to the
next. Figure 25 shows a typical heating profile for use when
soldering a surface mount device to a printed circuit board.
This profile will vary among soldering systems but it is a good
starting point. Factors that can affect the profile include the
type of soldering system in use, density and types of
components on the board, type of solder used, and the type
of board or substrate material being used. This profile shows
temperature versus time. The line on the graph shows the
STEP 1
PREHEAT
ZONE 1
“RAMP”
200°C
STEP 2
STEP 3
VENT
HEATING
“SOAK” ZONES 2 & 5
“RAMP”
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
actual temperature that might be experienced on the surface
of a test board at or near a central solder joint. The two
profiles are based on a high density and a low density board.
The Vitronics SMD310 convection/infrared reflow soldering
system was used to generate this profile. The type of solder
used was 62/36/2 Tin Lead Silver with a melting point
between 177 –189°C. When this type of furnace is used for
solder reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.
STEP 6 STEP 7
VENT COOLING
STEP 5
STEP 4
HEATING
HEATING
ZONES 3 & 6 ZONES 4 & 7
“SPIKE”
“SOAK”
205° TO 219°C
PEAK AT
SOLDER JOINT
170°C
160°C
150°C
150°C
140°C
100°C
100°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
50°C
TIME (3 TO 7 MINUTES TOTAL)
TMAX
Figure 46. Typical Solder Heating Profile
14
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
A
G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
V
6
5
4
1
2
3
DIM
A
B
C
D
G
H
J
K
N
S
V
–B–
S
D 6 PL
0.2 (0.008)
M
B
M
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026 BSC
–––
0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
0.012
0.016
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
–––
0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
0.30
0.40
N
J
C
H
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
EMITTER 2
BASE 2
COLLECTOR 1
EMITTER 1
BASE 1
COLLECTOR 2
K
CASE 419B–01
ISSUE C
Motorola Small–Signal Transistors, FETs and Diodes Device Data
15
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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16
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MUN5311DW1T1/D
Motorola Small–Signal Transistors, FETs and Diodes
Device Data