LSF872C1S Infrared Emitting Diode 2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25℃) CONDITIONS ITEM SYMBOL IF=50mA Power Output PO IF=50mA Forward Voltage VF VR=5V Reverse Current IR Peak Wavelength λp IF=50mA Spectral Line Half Width Δλ IF=50mA IF=50mA Half Intensity Beam Angle θ Junction Capacitance Cj 1MHz ,V=0V Temp. Coefficient of PO IF=10mA P/T Temp. Coefficient of VF IF=10mA V/T 120 80 60 40 20 0 0 1 2 200 150 100 50 0 3 0 FORWARD VOLTAGE(V) OPTRANS 100 40 20 0 770 870 WAVELENGTH(nm) To purchase this part contact Marktech Optoelectronics at 800.984.5337 970 RELATIVE POWER OUTPUT(%) 60 100 80 60 40 20 0 -30 100 125 0 30 60 60 40 20 0 -90 -60 -30 0 30 60 90 BEAM ANGLE(deg.) 140 120 80 75 80 POWER OUTPUT vs TEMPERATURE IF=10mA THERMAL DERATING CURVE FORWARD CURRENT(mA) RELATIVE POWER OUTPUT(%) UNIT mA A V mW ℃ ℃ ℃ ℃ 50 100 FORWARD CURRENT(mA) 120 1. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) ITEM RATINGS SYMBOL Forward Current (DC) 60 IF Forward Current (Pulse)*1 0.5 IFP 5 Reverse Voltage VR 100 Power Dissipation PD Operating Temp. Topr -20 TO 85 Storage Temp. Tstg -30 TO 100 Junction Temp. 100 Tj Lead Soldering Temp.*2 260 Tls *1:Tw=10uS,T=10mS *2:Time 5 Sec max,Position:Up to 3mm from the body 25 1.6 FORWARD VOLTAGE vs TEMPERATURE IF=10mA 120 FORWARD VOLTAGE(V) SPECTRAL OUTPUT UNIT mW V μA nm nm deg. pF %/℃ mV/℃ RADIATION PATTERN RELATIVE POWER OUTPUT(%) 100 MAX 20.0 2.0 10 120 250 RELATIVE POWER OUTPUT(%) FORWARD CURRENT(mA) ① Anode ② Cathode Dimensions (Unit:mm) ･High-output Power ･Compact ･High Reliability APPLICATIONS ･Optical Switches ･Optical Sensors TYP 17.0 1.55 870 45 ±25 50 -0.3 -2.1 RELATIVE POWER vs FORWARD CURRENT FORWARD I-V CHARACTERISTICS FEATURES MIN 14.0 100 90 AMBIENT TEMPERATURE(℃) Marktech Optoelectronics www.marktechopto.com 80 60 40 20 0 -30 0 30 60 AMBIENT TEMPERATURE(℃) 90 1.5 1.4 1.3 1.2 1.1 1 -30 0 30 60 90 AMBIENT TEMPERATURE(℃) 2006/5/24