Fairchild NDS9955 Dual n-channel enhancement mode field effect transistor Datasheet

May 1998
NDS9955
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to provide superior switching
performance and minimize on-state resistance. These
devices are particularly suited for low voltage applications
such as disk drive motor control, battery powered circuits
where fast switching, low in-line power loss, and resistance
to transients are needed.
SuperSOTTM-6
SOT-23
SuperSOTTM-8
D2
D1
D2
D1
S
ND 55
99
S2
SO-8
pin 1
S1
Absolute Maximum Ratings
G2
G1
3.0 A, 50 V. RDS(ON) = 0.130 Ω @ VGS = 10 V,
RDS(ON) = 0.200 Ω @ VGS = 4.5 V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely
used surface mount package.
Dual MOSFET in surface mount package.
SO-8
SOIC-16
SOT-223
5
4
6
3
7
2
8
1
TA = 25oC unless other wise noted
Symbol
Parameter
NDS9955
Units
VDSS
Drain-Source Voltage
50
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current - Continuous
3
A
(Note 1a)
- Pulsed
PD
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
TJ,TSTG
10
2
(Note 1a)
(Note 1b)
1
(Note 1c)
0.9
Operating and Storage Temperature Range
W
1.6
-55 to 150
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
© 1998 Fairchild Semiconductor Corporation
NDS9955 Rev.A
Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, I D = 250 µA
50
V
∆BVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
ID = 250 µA, Referenced to 25 C
IDSS
Zero Gate Voltage Drain Current
VDS = 40 V, VGS = 0 V
IGSSF
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
100
nA
IGSSR
Gate - Body Leakage, Reverse
VGS = -20 V, VDS = 0 V
-100
nA
1.7
3
V
0.076
0.13
0.124
0.2
0.103
0.2
0.166
0.3
ON CHARACTERISTICS
o
mV/ oC
60
2
µA
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(ON)
Static Drain-Source On-Resistance
VGS = 10 V, I D = 3 A
1
TJ =125°C
0.7
TJ =125°C
VGS = 4.5 V, I D = 1.5 A
TJ =125°C
2.2
10
Ω
ID(ON)
On-State Drain Current
VGS = 10 V, VDS = 10 V
A
gFS
Forward Transconductance
VDS = 10 V, I D = 3 A
5.3
S
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
345
pF
110
pF
25
pF
DYNAMIC CH ARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 2)
tD(on)
Turn - On Delay Time
VDS = 25 V, I D = 1 A
5
20
tr
Turn - On Rise Time
VGS = 10 V , RGEN = 6 Ω
tD(off)
tf
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
ns
7.5
20
Turn - Off Delay Time
20
70
Turn - Off Fall Time
7
5
VDS = 25 V, I D = 2 A,
12.9
30
nC
VGS = 10 V
1.7
1.3
A
3.2
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, I S = 1.3 A
trr
Reverse Recovery Time
Irr
Reverse Recovery Current
VGS = 0 V, IF = 1.3 A,
dIF/dt = 100 A/µs
(Note 2)
0.8
1.2
V
40
ns
1.5
A
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.
a. 78OC/W on a 0.5 in2
pad of 2oz copper.
b. 125OC/W on a 0.02 in2
pad of 2oz copper.
c. 135OC/W on a 0.003 in2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDS9955 Rev.A
Typical Electrical Characteristics
6.0V
5.0V
15
R DS(ON), NORMALIZED
ID , DRAIN-SOURCE CURRENT (A)
VGS = 10V
4.5V
4.0V
10
3.5V
5
3.0V
0
DRAIN-SOURCE ON-RESISTANCE
2.5
20
2
3.5 V
1.75
4.0 V
1.5
1
2
V
DS
3
4
5
2
10
I D = 2A
R DS(ON) , ON-RESISTANCE (OHM)
1.2
1
0.8
0.6
-25
0
25
50
75
100
T , JUNCTION TEMPERATURE (°C)
125
0.3
0.2
T A =125°C
0.1
TA =25°C
0
150
2
4
V
I S , REVERSE DRAIN CURRENT (A)
6
4
2
2
2.5
3
3.5
4
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5 . Transfer Characteristics.
10
10
TJ = -55°C
25°C
125°C
8
8
, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VDS = 5V
6
GS
Figure 3. On-Resistance Variation With
Temperature.
1.5
8
0.4
I D = 3.0A
V GS = 10V
1.4
1
6
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0
4
I D , DRAIN CURRENT (A)
J
ID , DRAIN CURRENT (A)
R DS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
0
, DRAIN-SOURCE VOLTAGE (V)
2
0.4
-50
10V
1
Figure 1. On-Region Characteristics.
1.8
4.5 V
5.0V
6.0V
1.25
0.75
0
V GS = 3.0V
2.25
4.5
5
VGS = 0V
5
TJ = 125°C
3
2
25°C
1
-55°C
0.5
0.3
0.2
0.1
0.4
0.6
0.8
1
1.2
VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
NDS9955 Rev.A
Typical Electrical Characteristics (continued)
1000
I D = 3A
V GS = 10V
1.8
400
CAPACITANCE (pF)
R DS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2
1.6
1.4
1.2
1
Ciss
200
Coss
100
50
Crss
0.8
f = 1 MHz
VGS = 0 V
20
0.6
0.4
-50
-25
0
25
50
75
100
125
10
0.1
150
0.3
J
3
10
20
50
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
50
30
100
us
1m
s
IT
IM
)L
ON
S(
D
R
3
10m
s
10
0m
s
1
1s
10s
DC
0.3
VGS =10V
SINGLE PULSE
RθJA = 135°C/W
A
TA = 25°C
0.1
0.03
0.01
0.1
0.2
0.5
SINGLE PULSE
RθJA =135°C/W
TA = 25°C
40
POWER (W)
10
30
20
10
1
2
5
10
20
50
0
0.001
100
0.01
0.1
1
10
100
300
SINGLE PULSE TIME (SEC)
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
ID , DRAIN CURRENT (A)
1
VDS , DRAIN TO SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5
0.2
0.1
0.05
0.02
D = 0.5
R θJA (t) = r(t) * R θJA
R θJA = 135 °C/W
0.2
0.1
0.05
P(pk)
0.02
0.01
0.01
t1
Single Pulse
Duty Cycle, D = t1 /t2
0.002
0.001
0.0001
t2
TJ - TA = P * RθJA (t)
0.005
0.001
0.01
0.1
1
10
100
300
t1 , TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
thermal response will change depending on the circuit board design.
Transient
NDS9955 Rev.A
SO-8 Tape and Reel Data and Package Dimensions
SOIC(8lds) Packaging
Configuration: Figure 1.0
Packaging Description:
EL ECT ROST AT IC
SEN SIT IVE DEVICES
DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC
EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S
TNR D ATE
PT NUMB ER
PEEL STREN GTH MIN ___ __ ____ __ ___gms
MAX ___ ___ ___ ___ _ gms
Antistatic Cover Tape
ESD Label
SOIC-8 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2,500 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or
177cm diameter reel. This and some other options are
further described in the Packaging Information table.
These full reels are individually barcode labeled and
placed inside a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
comes in different sizes depending on the number of parts
shipped.
Static Dissipative
Embossed Carrier Tape
F63TNR
Label
Customized
Label
F852
NDS
9959
F852
NDS
9959
F852
NDS
9959
F852
NDS
9959
F852
NDS
9959
Pin 1
SOIC (8lds) Packaging Information
Packaging Option
Packaging type
Qty per Reel/Tube/Bag
Standard
(no flow code)
TNR
2,500
L86Z
F011
D84Z
Rail/Tube
TNR
TNR
95
4,000
500
13" Dia
-
13" Dia
7" Dia
343x64x343
530x130x83
343x64x343
184x187x47
Max qty per Box
5,000
30,000
8,000
1,000
Weight per unit (gm)
0.0774
0.0774
0.0774
0.0774
Weight per Reel (kg)
0.6060
-
0.9696
0.1182
Reel Size
Box Dimension (mm)
SOIC-8 Unit Orientation
Note/Comments
343mm x 342mm x 64mm
Standard Intermediate box
ESD Label
F63TNR Label sample
F63TNLabel
F63TN Label
LOT: CBVK741B019
QTY: 2500
FSID: FDS9953A
SPEC:
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
ESD Label
(F63TNR)3
SOIC(8lds) Tape Leader and Trailer
Configuration: Figure 2.0
Carrier Tape
Cover Tape
Components
Trailer Tape
640mm minimum or
80 empty pockets
Leader Tape
1680mm minimum or
210 empty pockets
July 1999, Rev. B
SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC(8lds) Embossed Carrier Tape
Configuration: Figure 3.0
P0
D0
T
E1
F
K0
Wc
W
E2
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
Pkg type
A0
B0
SOIC(8lds)
(12mm)
6.50
+/-0.10
5.30
+/-0.10
W
12.0
+/-0.3
D0
D1
E1
E2
1.55
+/-0.05
1.60
+/-0.10
1.75
+/-0.10
F
10.25
min
5.50
+/-0.05
P1
P0
8.0
+/-0.1
4.0
+/-0.1
K0
2.1
+/-0.10
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
T
Wc
0.450
+/0.150
9.2
+/-0.3
0.06
+/-0.02
0.5mm
maximum
20 deg maximum
Typical
component
cavity
center line
B0
Tc
0.5mm
maximum
20 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
A0
Component Rotation
Sketch C (Top View)
Component lateral movement
Sketch B (Top View)
SOIC(8lds) Reel Configuration: Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A
Max
Dim A
max
See detail AA
Dim N
7" Diameter Option
B Min
Dim C
See detail AA
W3
13" Diameter Option
Dim D
min
W2 max Measured at Hub
DETAIL AA
Dimensions are in inches and millimeters
Tape Size
Reel
Option
Dim A
Dim B
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
2.165
55
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
7.00
178
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
12mm
7" Dia
7.00
177.8
12mm
13" Dia
13.00
330
 1998 Fairchild Semiconductor Corporation
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
July 1999, Rev. B
SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC-8 (FS PKG Code S1)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0774
9
September 1998, Rev. A
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.