Yea Shin ER1J Surface mount superfast rectifi er voltage - 50 to 600 volts current - 1.0 ampere Datasheet

DATA SHEET
ER1A~ER1J
SEMICONDUCTOR
SURFACE MOUNT SUPERFAST RECTIFI ER
VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere
FEATURES
• For surface mounted applications
• Low profile package
SMB/DO-214AA
Unit:inch(mm)
• Built-in strain relief
• Easy pick and place
.083(2.11)
.075(1.91)
• Superfast recovery times for high efficiency
• Plastic package has Underwriters Laboratory
.155(3.94)
.130(3.30)
Flammability Classification 94V-O
• Glass passivated junction
• High temperature soldering:
.185(4.70)
.160(4.06)
260 °C J /10 seconds at terminals
• High temperature soldering :
260 °C
.012(.305)
.006(.152)
/ 10 seconds at terminals
• Pb free product at available : 99% Sn above meet RoHS
.096(2.44)
.083(2.13)
environment substance directive request
.012(.31)
.006(.15)
MECHANICAL DATA
.050(1.27)
.030(0.76)
• Case: JEDEC DO-214AA molded plastic
.008(.203)
.002(.051)
• Terminals: Solder plated, solderable per
.220(5.59)
.200(5.08)
• MIL-STD-750, Method 2026
• Polarity: Indicated by cathode band
• Standard packaging: 12mm tape (EIA-481)
• Weight: 0.003 ounce, 0.093 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOLS
ER1A
ER1B
ER1C
ER1D
ER1E
ER1G
ER1J
Maximum Recurrent Peak Reverse V oltage
VRRM
50
100
150
200
300
400
600
Volts
Maximum RMS Voltage
VRMS
35
70
105
140
210
280
420
Volts
VDC
50
100
150
200
300
400
600
Volts
Maximum DC Blocking Voltage
Maximum Average Forward Rectif ied Current ,
at TL=100 OC
UNITS
I(AV)
1.0
Amps
IFSM
30.0
Amps
Peak Forward Surge Current 8.3ms single half
sine wave
super imposed on rated load(JEDEC method)
Maximum Instantaneous Forward Vol tage at 1.0A
Maxi mum DC Reverse Cur rent T A=25
At Rated DC Blocking Voltage TA=100
Maximum Reverse Recovery Time (Note 1)
VF
0.95
1.25
5.0
IR
100
1.7
Volts
uA
TRR
35.0
Typi cal Junction capacitance (Note 2)
CJ
10.0
pF
Typical Thermal Resistance (Note 3 )
RθJA
34
°C /W
TJ,TSTG
-55to +150
°C
Operating and Storage Temperature Range
nS
NOTES:
1. Reverse Recovery Test Conditions: IF=0.5A
, IR=1.0A, Irr=0.25A
2. Measured at 1 MHz andApplied reversevoltage of 4.0 volts
3. 8.0mm2(.013mm thick) land areas
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REV.02 20110725
RATINGS AND CHARACTERISTIC CURVES
ER1A~ER1J
trr
+0.5A
2.0 SINGLE PHASE HALF WAVE
AVERAGE FORWARD
CURRENT AMPERES
0
-0.25
NOTE:1.Rise Time = 7ns max.
Input Impedance = 1 megohm. 22pF
2.Rise Time = 10ns max.
RESISTIVE OR INDUCTIVE
P.C.B MOUNTED ON
0.315×0.315"(8.0×8.0mm)
PAD AREAS
-1.0
SET TIME
BASE FOR
Source Impedance = 50 Ohms
1.0
1cm
25
Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND
INSTANTANEOUS FORWARD CURRENT AMPERES
IR-REVERSE LEAKAGE CURRENT, MICROAMPERES
1000
TJ = 125 °C
10
TJ = 75 °C
1
TJ = 25°C
0.1
40
60
80
100
100 125 150 175
Fig. 2-MAXIMUM AVERAGE FORWARD
CURRENT RATING
TEST CIRCUIT DIAGRAM
20
75
LEAD TEMPERATURE,°C
50 ns/cm
100
50
120
10
ER1A
1
ER1E
ER1J
0.1
T J = 25 °C
0.01
0.001
0.2
0.4
0.6
0.8
1.0
1.2
1.4
INSTANTANEOUS FORWARD VOLTAGE VOLTS
Fig. 3-TYPICAL REVERSE CHARACTERISTICS
Fig. 4-TYPICAL FORWARD CHARACTERISTICS
14
30
JUNCTION CAPACITANCE, pF
PEAK FORWARD SURGE CURRENT, AMPERES
% OF PIV. VOLTS
25
8.3ms SINGLE HALF SINE WAVE
JEDEC METHOD
20
15
10
5
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
12
10
TJ = 25 °C
f = 1.0MHz
Vsig = 50mVp-p
8.0
6.0
4.0
2.0
.1
1
10
100
REVERSE VOLTAGE, VOLTS
Fig. 5-MAXIMUM NON-REPETITIVE SURGE
Fig. 6-TYPICAL JUNCTION CAPACITANCE
CURRENT
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REV.02 20110725
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