DATA SHEET ER1A~ER1J SEMICONDUCTOR SURFACE MOUNT SUPERFAST RECTIFI ER VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere FEATURES • For surface mounted applications • Low profile package SMB/DO-214AA Unit:inch(mm) • Built-in strain relief • Easy pick and place .083(2.11) .075(1.91) • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory .155(3.94) .130(3.30) Flammability Classification 94V-O • Glass passivated junction • High temperature soldering: .185(4.70) .160(4.06) 260 °C J /10 seconds at terminals • High temperature soldering : 260 °C .012(.305) .006(.152) / 10 seconds at terminals • Pb free product at available : 99% Sn above meet RoHS .096(2.44) .083(2.13) environment substance directive request .012(.31) .006(.15) MECHANICAL DATA .050(1.27) .030(0.76) • Case: JEDEC DO-214AA molded plastic .008(.203) .002(.051) • Terminals: Solder plated, solderable per .220(5.59) .200(5.08) • MIL-STD-750, Method 2026 • Polarity: Indicated by cathode band • Standard packaging: 12mm tape (EIA-481) • Weight: 0.003 ounce, 0.093 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOLS ER1A ER1B ER1C ER1D ER1E ER1G ER1J Maximum Recurrent Peak Reverse V oltage VRRM 50 100 150 200 300 400 600 Volts Maximum RMS Voltage VRMS 35 70 105 140 210 280 420 Volts VDC 50 100 150 200 300 400 600 Volts Maximum DC Blocking Voltage Maximum Average Forward Rectif ied Current , at TL=100 OC UNITS I(AV) 1.0 Amps IFSM 30.0 Amps Peak Forward Surge Current 8.3ms single half sine wave super imposed on rated load(JEDEC method) Maximum Instantaneous Forward Vol tage at 1.0A Maxi mum DC Reverse Cur rent T A=25 At Rated DC Blocking Voltage TA=100 Maximum Reverse Recovery Time (Note 1) VF 0.95 1.25 5.0 IR 100 1.7 Volts uA TRR 35.0 Typi cal Junction capacitance (Note 2) CJ 10.0 pF Typical Thermal Resistance (Note 3 ) RθJA 34 °C /W TJ,TSTG -55to +150 °C Operating and Storage Temperature Range nS NOTES: 1. Reverse Recovery Test Conditions: IF=0.5A , IR=1.0A, Irr=0.25A 2. Measured at 1 MHz andApplied reversevoltage of 4.0 volts 3. 8.0mm2(.013mm thick) land areas http://www.yeashin.com 1 REV.02 20110725 RATINGS AND CHARACTERISTIC CURVES ER1A~ER1J trr +0.5A 2.0 SINGLE PHASE HALF WAVE AVERAGE FORWARD CURRENT AMPERES 0 -0.25 NOTE:1.Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF 2.Rise Time = 10ns max. RESISTIVE OR INDUCTIVE P.C.B MOUNTED ON 0.315×0.315"(8.0×8.0mm) PAD AREAS -1.0 SET TIME BASE FOR Source Impedance = 50 Ohms 1.0 1cm 25 Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND INSTANTANEOUS FORWARD CURRENT AMPERES IR-REVERSE LEAKAGE CURRENT, MICROAMPERES 1000 TJ = 125 °C 10 TJ = 75 °C 1 TJ = 25°C 0.1 40 60 80 100 100 125 150 175 Fig. 2-MAXIMUM AVERAGE FORWARD CURRENT RATING TEST CIRCUIT DIAGRAM 20 75 LEAD TEMPERATURE,°C 50 ns/cm 100 50 120 10 ER1A 1 ER1E ER1J 0.1 T J = 25 °C 0.01 0.001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE VOLTS Fig. 3-TYPICAL REVERSE CHARACTERISTICS Fig. 4-TYPICAL FORWARD CHARACTERISTICS 14 30 JUNCTION CAPACITANCE, pF PEAK FORWARD SURGE CURRENT, AMPERES % OF PIV. VOLTS 25 8.3ms SINGLE HALF SINE WAVE JEDEC METHOD 20 15 10 5 1 2 5 10 20 50 100 NUMBER OF CYCLES AT 60Hz 12 10 TJ = 25 °C f = 1.0MHz Vsig = 50mVp-p 8.0 6.0 4.0 2.0 .1 1 10 100 REVERSE VOLTAGE, VOLTS Fig. 5-MAXIMUM NON-REPETITIVE SURGE Fig. 6-TYPICAL JUNCTION CAPACITANCE CURRENT http://www.yeashin.com 2 REV.02 20110725