RF GRM55ER72A475KA01L 50mhz to 1000mhz, 15w gan wideband Datasheet

RFHA1000
RFHA1000
50MHz to
1000MHz,
15W GaN
Wideband
Power Amplifier
50MHz TO 1000MHz, 15W GaN WIDEBAND
POWER AMPLIFIER
Package: AlN Leadless Chip Carrier / SO8
VGS
Pin 1
Features

Advanced GaN HEMT Technology

Output Power of 15W

Advanced Heat-Sink Technology



50MHz to 1000MHz
Instantaneous Bandwidth
RF IN
Pin 2,3
RF OUT / VDS
Pin 6,7
Input Internally Matched to 50
GND
BASE
28V Operation Typical
Performance
Output Power 41.5dBm
Gain 17dB
 Power Added Efficiency 60%
-40°C to 85°C Operating
Temperature




Large Signal Models Available
Applications


Class AB Operation for Public
Mobile Radio
Power Amplifier Stage for
Commercial Wireless
Infrastructure

General Purpose Tx Amplification

Test Instrumentation

Civilian and Military Radar
Functional Block Diagram
Product Description
The RFHA1000 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose
amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat
gain, and large instantaneous bandwidth in a single amplifier design. The
RFHA1000 is an input matched GaN transistor packaged in an air cavity ceramic
package which provides excellent thermal stability through the use of advanced
heat sink and power dissipation technologies. Ease of integration is accomplished
through the incorporation of optimized input matching network within the package
that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for
any sub-band within the overall bandwidth.
Ordering Information
RFHA1000S2
RFHA1000SB
RFHA1000SQ
RFHA1000SR
RFHA1000TR7
RFHA1000PCBA-410
2-Piece sample bag
5-Piece bag
25-Piece bag
100 Pieces on 7” short reel
750 Pieces on 7” reel
Fully assembled evaluation board 50MHz to 1000MHz;
28V operation
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
DS120418
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 11
RFHA1000
Absolute Maximum Ratings
Parameter
Rating
Unit
Drain Voltage (VD)
150
V
Gate Voltage (VG)
-8 to +2
V
Gate Current (IG)
10
mA
Operational Voltage
32
V
31
dBm
RF- Input Power
Ruggedness (VSWR)
12:1
Storage Temperature Range
-55 to +125
°C
Operating Temperature Range (TL)
-40 to +85
°C
200
°C
Operating Junction Temperature (TJ)
Human Body Model
Class 1C
MTTF (TJ < 200°C, 95% Confidence Limits)*
3 x 106
Hours
6
°C/W
Thermal Resistance, RTH (junction to case)
measured at TC = 85°C, DC bias only
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
RoHS (Restriction of Hazardous Substances): Compliant per EU Directive
2002/95/EC.
* MTTF - median time to failure for wear-out failure mode (30% IDSS degradation) which is determined by the technology process reliability.
Refer to product qualification report for FIT(random) failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage
and current must not exceed the maximum operating values specified in the table on page two.
Bias Conditions should also satisfy the following expression: PDISS < (TJ - TC)/RTH J - C and TC = TCASE
Specification
Typ.
Max.
28
32
V
-3
-2
V
RF Input Power (PIN)
30
dBm
Input Source VSWR
10:1
Parameter
Min.
Unit
Condition
Recommended Operating
Conditions
Drain Voltage (VDSQ)
Gate Voltage (VGSQ)
-5
Drain Bias Current
88
mA
RF Performance
Characteristics
Frequency Range
50
1000
MHz
Small signal 3dB bandwidth
Linear Gain
17.5
dB
POUT = 30dBm, 100MHz
Power Gain
14.5
dB
P3DB, 100MHz
3
dB
POUT = 30dBm, 50MHz to 1000MHz
-0.02
dB/°C
Gain Flatness
Gain Variation with Temperature
Input Return Loss (S11)
Output Power (P3dB)
Power Added Efficiency (PAE)
2 of 11
-10
dB
41.5
dBm
50MHz to 1000MHz
60
%
50MHz to 1000MHz
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS120418
RFHA1000
Parameter
Min.
Specification
Typ.
Max.
Unit
RF Functional Tests
Condition
[1], [2]
VGS(Q)
-3
V
Gain
14.8
16
dB
PIN = 10dBm
Power Gain
13.2
14.3
dB
PIN = 27dBm
40.2
41.3
dBm
46
53
%
Input Return Loss
Output Power
Power Added Efficiency (PAE)
-12
-10
dB
[1] Test Conditions: VDSQ = 28V, IDQ = 88mA, CW, f = 500MHz, T = 25ºC.
[2] Performance in a standard tuned test fixture.
DS120418
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
3 of 11
RFHA1000
Typical Performance in Standard Fixed Tuned Test Fixture Matched for 50MHz to
1000MHz (T = 25°C, unless noted)
GainversusFrequency,PIN =27dBm
SmallSignalsparametersversusFrequency
(CW,VD =28V,IDQ =88mA)
0
20
16
5
16
12
10
8
15
5
40
85C
85qC
25C
25qC
40
qC
40C
800
40
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
900
1000
Frequency(MHz)
800
30
700
1000
900
800
25
700
0
600
20
500
4
50
600
IRL
500
Gain
60
400
15
300
8
70
200
10
100
12
80
0
5
PowerAddedEfficiency,PAE(%)
16
90
InputReturnLoss(dB)
0
400
700
(CW,VD =28V,IDQ =88mA)
20
300
600
PAEversusFrequency,POUT =41dBm
(CW,VD =28V,IDQ =88mA)
200
500
Frequency(MHz)
Gain/IRLversusFrequency,POUT =41dBm
100
400
300
200
100
1000
900
800
700
600
500
400
300
200
100
85C
85qC
25C
25qC
40C
40qC
20
25
0
900
15
0
20
10
1000
60
900
InputReturnLoss,IRL(dB)
80
0
PowerAddedEfficiency,PAE(%)
0
Frequency(MHz)
Gain(dB)
800
(CW,VD =28V,IDQ =88mA)
100
4 of 11
700
InputReturnLossversusFrequency,PIN =27dBm
(CW,VD =28V,IDQ =88mA)
Frequency(MHz)
600
Frequency(MHz)
PAEversusFrequency,PIN =27dBm
0
1000
Frequency(MHz)
500
0
400
25
85C
85qC
25C
qC
25
40C
40
qC
300
4
200
20
1000
900
800
700
600
500
400
300
200
100
0
0
8
100
S21
S11
S22
12
0
4
Gain(dB)
20
Magnitude,S11,S22 (dB)
Magnitude,S21 (dB)
(VD =28V,IDQ =88mA)
DS120418
RFHA1000
Typical Performance in Standard Fixed Tuned Test Fixture Matched for 50MHz to
1000MHz (T = 25°C, unless noted)
GainversusFrequency
PowerAddedEfficiencyversusFrequency
(CW,VD =28V,IDQ =88mA)
(CW,VD =28V,IDQ =88mA)
20
100
80
PowerAddedEfficiency,PAE(%)
16
12
8
PPout=41dBm
OUT
PPout=40dBm
OUT
PPout=30dBm
OUT
4
40
20
900
800
700
600
500
(CW,VD =28V,IDQ =88mA)
(CW,VD =28V,IDQ =88mA)
19
0
PPout=41dBm
OUT
PPout=40dBm
OUT
PPout=30dBm
OUT
5
18
17
10
Gain(dB)
InputReturnLoss,IRL(dB)
400
GainversusOutputPower
InputReturnLossversusFrequency
15
16
15
20
freq=100MHz
freq=500MHz
freq=900MHz
Frequency(MHz)
13
1000
900
800
700
600
500
400
300
200
100
14
0
25
20
25
30
35
POUT,OutputPower(dBm)
40
45
InputReturnLossversusOutputPower
PowerAddedEfficiencyversusOutputPower
(CW,VD =28V,IDQ =88mA)
(CW,VD =28V,IDQ =88mA)
0
100
freq=100MHz
freq=500MHz
freq=900MHz
80
freq=100MHz
freq=500MHz
freq=900MHz
5
InputReturnLoss,IRL(dB)
PowerAddedEfficiency,PAE(%)
300
200
0
Frequency(MHz)
1000
Frequency(MHz)
1000
900
800
700
600
500
400
300
200
100
0
0
0
60
100
Gain(dB)
PPout=41dBm
OUT
PPout=40dBm
OUT
PPout=30dBm
OUT
60
40
10
15
20
20
25
0
20
DS120418
25
30
35
POUT,OutputPower(dBm)
40
45
20
25
30
35
POUT,OutputPower(dBm)
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
40
45
5 of 11
RFHA1000
Typical Performance in Standard Fixed Tuned Test Fixture Matched for 50MHz to
1000MHz (T = 25°C, unless noted)
IMDversusOutputPower
IMDversusToneSpacing
(VD =28V,IDQ =132mA,f1=449.5MHz,f2=450.5MHz)
(POUT=12.5WPEP,VD =28V,IDQ =132mA)
0
5
10
IMD3
IMD3
IMD3
IMD3
IMD5
IMD5
IMD5
IMD5
IMD7
IMD7
IMD7
IMD7
IntermodulationDistortion(IMD dBc)
IntermodulationDistortion(IMD dBc)
0
15
20
25
30
35
40
10
20
30
40
50
f1=450MHzToneSpacing/2
f2=450MHz+ToneSpacing/2
45
60
50
0.1
1
10
POUT,OutputPower(W PEP)
0.1
100
1
10
100
ToneSpacing(MHz)
GainversusOutputPower
IMD3versusOutputPower
(2Tone1MHzSeparation,VD =28V,IDQ varied,fc=450MHz)
(2Tone1MHzSeparation,VD =28V,IDQvaried,fc=450MHz)
10
20
44mA
IMD3,IntermodulationDistortion(dBc)
19
18
Gain(dB)
17
16
15
44mA
88mA
14
132mA
176mA
13
15
88mA
132mA
176mA
20
220mA
25
30
35
40
220mA
12
45
15
20
25
30
POUT,OutputPower(dBm)
35
40
0.1
1
10
100
POUT,OutputPower(WPEP)
PowerDissipationDeratingCurve
(BasedonMaximumpackagetemperatureandRTH)
40
35
PowerDissipation(W)
30
25
20
15
10
5
0
0
6 of 11
10
20
30
40
50
60
70
MaximumCaseTemperature(°C)
80
90
100
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS120418
RFHA1000
Package Drawing
(All dimensions in mm.)
A123 : Trace Code
1234 : Serial Number
Package Style: Ceramic SO8
Pin Names and Descriptions
Pin
1
2
3
4
5
6
7
8
Pkg
Base
DS120418
Name
Description
Gate DC Bias pin
VGS
RF Input
RF IN
RF Input
RF IN
No Connect
N/C
No Connect
N/C
RF OUT/VDS RF Output / Drain DC Bias pin
RF OUT/VDS RF Output / Drain DC Bias pin
No Connect
N/C
Ground
GND
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RFHA1000
Bias Instruction for RFHA1000 Evaluation Board
ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board. Evaluation board
requires additional external fan cooling. Connect all supplies before powering evaluation board.
1. Connect RF cables at RFIN and RFOUT.
2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this
ground terminal.
3. Apply -5V to VG.
4. Apply 28V to VD.
5. Increase VG until drain current reaches 88mA or desired bias point.
6. Turn on the RF input.
Typical test data provided is measured to SMA connector reference plane, and include evaluation board / broadband bias
network mismatch and losses.
8 of 11
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS120418
RFHA1000
Evaluation Board Schematic
VG
VD
C15
C25
C11
C21
R21
1
2
C1
3
RF IN
50Ω Microstrip
4
VG
RFIN
GND
9
R11
N/C
RFOUT
RFIN
RFOUT
N/C
N/C
U1
L21
8
7
L20
C2
6
5
C20
50Ω Microstrip
RF OUT
RFHA1000
Evaluation Board Bill of Materials (BOM)
Component
C1, C2
C11
C15
C20
C25
R11
L20
L21
C21, R21
DS120418
Value
Manufacturer
Part Number
2400pF
10000pF
10F
3.3pF
4.7F
470
5.4nH
0.9H
NOT USED
Dielectric Labs Inc
Murata Electronics
Murata Electronics
ATC
Murata Electronics
Panasonic
Coilcraft
Coilcraft
-
C08BL242X-5UN-X0
GRM188R71H103KA01D
GRM21BF51C106ZE15L
100A3R3BW150XC
GRM55ER72A475KA01L
ERJ-3GEYJ471
0906-5_LB
1008AF-901XJLC
-
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
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RFHA1000
Evaluation Board Layout
P1
P2
P3
Device Impedances
Frequency (MHz)
RFHA1000PCBA-410 (50MHz to 1000MHz)
Z Source ()
Z Load ()
50
49.9 - j1.3
48.2 + j7.0
100
50.0 - j1.4
49.1 + j1.3
200
49.6 - j2.2
46.8 - j3.3
300
49.2 - j3.1
43.0 - j5.2
400
48.4 - j4.0
38.4 - j5.2
500
47.6 - j4.5
34.1 - j3.7
600
46.8 - j5.1
30.1 - j0.9
700
45.5 - j5.4
26.5 + j2.8
800
44.8 - j5.4
23.8 + j7.0
900
43.7 - j5.3
21.2 + j11.6
1000
43.0 - j5.0
19.3 + j16.6
NOTE: Device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency and peak power
performance across the entire frequency bandwidth.
10 of 11
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS120418
RFHA1000
Device Handling/Environmental Conditions
RFMD does not recommend operating this device with typical drain voltage applied and the gate pinched off in a high humidity,
high temperature environment.
GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or evaluation
boards.
DC Bias
The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of the device is
saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than
the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS.
RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain current can be
adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current
(IDQ) shown in the RF typical performance table is chosen to best represent the operational characteristics for this device, considering manufacturing variations and expected performance. The user may choose alternate conditions for biasing this device
based on performance tradeoffs.
Mounting and Thermal Considerations
The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is
measured using IR microscopy capturing the device under test temperature at the hottest spot of the die. At the same time, the
package temperature is measured using a thermocouple touching the backside of the die embedded in the device heat sink
but sized to prevent the measurement system from impacting the results. Knowing the dissipated power at the time of the
measurement, the thermal resistance is calculated.
In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or below the maximum of 200°C. Proper thermal design includes consideration of ambient temperature and the thermal resistance from ambient to the back of the package including heat sinking systems and air flow mechanisms. Incorporating the dissipated DC
power, it is possible to calculate the junction temperature of the device
DS120418
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
11 of 11
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