RFHA1000 RFHA1000 50MHz to 1000MHz, 15W GaN Wideband Power Amplifier 50MHz TO 1000MHz, 15W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 15W Advanced Heat-Sink Technology 50MHz to 1000MHz Instantaneous Bandwidth RF IN Pin 2,3 RF OUT / VDS Pin 6,7 Input Internally Matched to 50 GND BASE 28V Operation Typical Performance Output Power 41.5dBm Gain 17dB Power Added Efficiency 60% -40°C to 85°C Operating Temperature Large Signal Models Available Applications Class AB Operation for Public Mobile Radio Power Amplifier Stage for Commercial Wireless Infrastructure General Purpose Tx Amplification Test Instrumentation Civilian and Military Radar Functional Block Diagram Product Description The RFHA1000 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design. The RFHA1000 is an input matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth. Ordering Information RFHA1000S2 RFHA1000SB RFHA1000SQ RFHA1000SR RFHA1000TR7 RFHA1000PCBA-410 2-Piece sample bag 5-Piece bag 25-Piece bag 100 Pieces on 7” short reel 750 Pieces on 7” reel Fully assembled evaluation board 50MHz to 1000MHz; 28V operation Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT BiFET HBT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc. DS120418 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 11 RFHA1000 Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (VD) 150 V Gate Voltage (VG) -8 to +2 V Gate Current (IG) 10 mA Operational Voltage 32 V 31 dBm RF- Input Power Ruggedness (VSWR) 12:1 Storage Temperature Range -55 to +125 °C Operating Temperature Range (TL) -40 to +85 °C 200 °C Operating Junction Temperature (TJ) Human Body Model Class 1C MTTF (TJ < 200°C, 95% Confidence Limits)* 3 x 106 Hours 6 °C/W Thermal Resistance, RTH (junction to case) measured at TC = 85°C, DC bias only Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RoHS (Restriction of Hazardous Substances): Compliant per EU Directive 2002/95/EC. * MTTF - median time to failure for wear-out failure mode (30% IDSS degradation) which is determined by the technology process reliability. Refer to product qualification report for FIT(random) failure rate. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page two. Bias Conditions should also satisfy the following expression: PDISS < (TJ - TC)/RTH J - C and TC = TCASE Specification Typ. Max. 28 32 V -3 -2 V RF Input Power (PIN) 30 dBm Input Source VSWR 10:1 Parameter Min. Unit Condition Recommended Operating Conditions Drain Voltage (VDSQ) Gate Voltage (VGSQ) -5 Drain Bias Current 88 mA RF Performance Characteristics Frequency Range 50 1000 MHz Small signal 3dB bandwidth Linear Gain 17.5 dB POUT = 30dBm, 100MHz Power Gain 14.5 dB P3DB, 100MHz 3 dB POUT = 30dBm, 50MHz to 1000MHz -0.02 dB/°C Gain Flatness Gain Variation with Temperature Input Return Loss (S11) Output Power (P3dB) Power Added Efficiency (PAE) 2 of 11 -10 dB 41.5 dBm 50MHz to 1000MHz 60 % 50MHz to 1000MHz 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120418 RFHA1000 Parameter Min. Specification Typ. Max. Unit RF Functional Tests Condition [1], [2] VGS(Q) -3 V Gain 14.8 16 dB PIN = 10dBm Power Gain 13.2 14.3 dB PIN = 27dBm 40.2 41.3 dBm 46 53 % Input Return Loss Output Power Power Added Efficiency (PAE) -12 -10 dB [1] Test Conditions: VDSQ = 28V, IDQ = 88mA, CW, f = 500MHz, T = 25ºC. [2] Performance in a standard tuned test fixture. DS120418 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 3 of 11 RFHA1000 Typical Performance in Standard Fixed Tuned Test Fixture Matched for 50MHz to 1000MHz (T = 25°C, unless noted) GainversusFrequency,PIN =27dBm SmallSignalsparametersversusFrequency (CW,VD =28V,IDQ =88mA) 0 20 16 5 16 12 10 8 15 5 40 85C 85qC 25C 25qC 40 qC 40C 800 40 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 900 1000 Frequency(MHz) 800 30 700 1000 900 800 25 700 0 600 20 500 4 50 600 IRL 500 Gain 60 400 15 300 8 70 200 10 100 12 80 0 5 PowerAddedEfficiency,PAE(%) 16 90 InputReturnLoss(dB) 0 400 700 (CW,VD =28V,IDQ =88mA) 20 300 600 PAEversusFrequency,POUT =41dBm (CW,VD =28V,IDQ =88mA) 200 500 Frequency(MHz) Gain/IRLversusFrequency,POUT =41dBm 100 400 300 200 100 1000 900 800 700 600 500 400 300 200 100 85C 85qC 25C 25qC 40C 40qC 20 25 0 900 15 0 20 10 1000 60 900 InputReturnLoss,IRL(dB) 80 0 PowerAddedEfficiency,PAE(%) 0 Frequency(MHz) Gain(dB) 800 (CW,VD =28V,IDQ =88mA) 100 4 of 11 700 InputReturnLossversusFrequency,PIN =27dBm (CW,VD =28V,IDQ =88mA) Frequency(MHz) 600 Frequency(MHz) PAEversusFrequency,PIN =27dBm 0 1000 Frequency(MHz) 500 0 400 25 85C 85qC 25C qC 25 40C 40 qC 300 4 200 20 1000 900 800 700 600 500 400 300 200 100 0 0 8 100 S21 S11 S22 12 0 4 Gain(dB) 20 Magnitude,S11,S22 (dB) Magnitude,S21 (dB) (VD =28V,IDQ =88mA) DS120418 RFHA1000 Typical Performance in Standard Fixed Tuned Test Fixture Matched for 50MHz to 1000MHz (T = 25°C, unless noted) GainversusFrequency PowerAddedEfficiencyversusFrequency (CW,VD =28V,IDQ =88mA) (CW,VD =28V,IDQ =88mA) 20 100 80 PowerAddedEfficiency,PAE(%) 16 12 8 PPout=41dBm OUT PPout=40dBm OUT PPout=30dBm OUT 4 40 20 900 800 700 600 500 (CW,VD =28V,IDQ =88mA) (CW,VD =28V,IDQ =88mA) 19 0 PPout=41dBm OUT PPout=40dBm OUT PPout=30dBm OUT 5 18 17 10 Gain(dB) InputReturnLoss,IRL(dB) 400 GainversusOutputPower InputReturnLossversusFrequency 15 16 15 20 freq=100MHz freq=500MHz freq=900MHz Frequency(MHz) 13 1000 900 800 700 600 500 400 300 200 100 14 0 25 20 25 30 35 POUT,OutputPower(dBm) 40 45 InputReturnLossversusOutputPower PowerAddedEfficiencyversusOutputPower (CW,VD =28V,IDQ =88mA) (CW,VD =28V,IDQ =88mA) 0 100 freq=100MHz freq=500MHz freq=900MHz 80 freq=100MHz freq=500MHz freq=900MHz 5 InputReturnLoss,IRL(dB) PowerAddedEfficiency,PAE(%) 300 200 0 Frequency(MHz) 1000 Frequency(MHz) 1000 900 800 700 600 500 400 300 200 100 0 0 0 60 100 Gain(dB) PPout=41dBm OUT PPout=40dBm OUT PPout=30dBm OUT 60 40 10 15 20 20 25 0 20 DS120418 25 30 35 POUT,OutputPower(dBm) 40 45 20 25 30 35 POUT,OutputPower(dBm) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 40 45 5 of 11 RFHA1000 Typical Performance in Standard Fixed Tuned Test Fixture Matched for 50MHz to 1000MHz (T = 25°C, unless noted) IMDversusOutputPower IMDversusToneSpacing (VD =28V,IDQ =132mA,f1=449.5MHz,f2=450.5MHz) (POUT=12.5WPEP,VD =28V,IDQ =132mA) 0 5 10 IMD3 IMD3 IMD3 IMD3 IMD5 IMD5 IMD5 IMD5 IMD7 IMD7 IMD7 IMD7 IntermodulationDistortion(IMD dBc) IntermodulationDistortion(IMD dBc) 0 15 20 25 30 35 40 10 20 30 40 50 f1=450MHzToneSpacing/2 f2=450MHz+ToneSpacing/2 45 60 50 0.1 1 10 POUT,OutputPower(W PEP) 0.1 100 1 10 100 ToneSpacing(MHz) GainversusOutputPower IMD3versusOutputPower (2Tone1MHzSeparation,VD =28V,IDQ varied,fc=450MHz) (2Tone1MHzSeparation,VD =28V,IDQvaried,fc=450MHz) 10 20 44mA IMD3,IntermodulationDistortion(dBc) 19 18 Gain(dB) 17 16 15 44mA 88mA 14 132mA 176mA 13 15 88mA 132mA 176mA 20 220mA 25 30 35 40 220mA 12 45 15 20 25 30 POUT,OutputPower(dBm) 35 40 0.1 1 10 100 POUT,OutputPower(WPEP) PowerDissipationDeratingCurve (BasedonMaximumpackagetemperatureandRTH) 40 35 PowerDissipation(W) 30 25 20 15 10 5 0 0 6 of 11 10 20 30 40 50 60 70 MaximumCaseTemperature(°C) 80 90 100 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120418 RFHA1000 Package Drawing (All dimensions in mm.) A123 : Trace Code 1234 : Serial Number Package Style: Ceramic SO8 Pin Names and Descriptions Pin 1 2 3 4 5 6 7 8 Pkg Base DS120418 Name Description Gate DC Bias pin VGS RF Input RF IN RF Input RF IN No Connect N/C No Connect N/C RF OUT/VDS RF Output / Drain DC Bias pin RF OUT/VDS RF Output / Drain DC Bias pin No Connect N/C Ground GND 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 7 of 11 RFHA1000 Bias Instruction for RFHA1000 Evaluation Board ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board. Evaluation board requires additional external fan cooling. Connect all supplies before powering evaluation board. 1. Connect RF cables at RFIN and RFOUT. 2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this ground terminal. 3. Apply -5V to VG. 4. Apply 28V to VD. 5. Increase VG until drain current reaches 88mA or desired bias point. 6. Turn on the RF input. Typical test data provided is measured to SMA connector reference plane, and include evaluation board / broadband bias network mismatch and losses. 8 of 11 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120418 RFHA1000 Evaluation Board Schematic VG VD C15 C25 C11 C21 R21 1 2 C1 3 RF IN 50Ω Microstrip 4 VG RFIN GND 9 R11 N/C RFOUT RFIN RFOUT N/C N/C U1 L21 8 7 L20 C2 6 5 C20 50Ω Microstrip RF OUT RFHA1000 Evaluation Board Bill of Materials (BOM) Component C1, C2 C11 C15 C20 C25 R11 L20 L21 C21, R21 DS120418 Value Manufacturer Part Number 2400pF 10000pF 10F 3.3pF 4.7F 470 5.4nH 0.9H NOT USED Dielectric Labs Inc Murata Electronics Murata Electronics ATC Murata Electronics Panasonic Coilcraft Coilcraft - C08BL242X-5UN-X0 GRM188R71H103KA01D GRM21BF51C106ZE15L 100A3R3BW150XC GRM55ER72A475KA01L ERJ-3GEYJ471 0906-5_LB 1008AF-901XJLC - 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 9 of 11 RFHA1000 Evaluation Board Layout P1 P2 P3 Device Impedances Frequency (MHz) RFHA1000PCBA-410 (50MHz to 1000MHz) Z Source () Z Load () 50 49.9 - j1.3 48.2 + j7.0 100 50.0 - j1.4 49.1 + j1.3 200 49.6 - j2.2 46.8 - j3.3 300 49.2 - j3.1 43.0 - j5.2 400 48.4 - j4.0 38.4 - j5.2 500 47.6 - j4.5 34.1 - j3.7 600 46.8 - j5.1 30.1 - j0.9 700 45.5 - j5.4 26.5 + j2.8 800 44.8 - j5.4 23.8 + j7.0 900 43.7 - j5.3 21.2 + j11.6 1000 43.0 - j5.0 19.3 + j16.6 NOTE: Device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency and peak power performance across the entire frequency bandwidth. 10 of 11 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120418 RFHA1000 Device Handling/Environmental Conditions RFMD does not recommend operating this device with typical drain voltage applied and the gate pinched off in a high humidity, high temperature environment. GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or evaluation boards. DC Bias The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS. RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current (IDQ) shown in the RF typical performance table is chosen to best represent the operational characteristics for this device, considering manufacturing variations and expected performance. The user may choose alternate conditions for biasing this device based on performance tradeoffs. Mounting and Thermal Considerations The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of the die. At the same time, the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heat sink but sized to prevent the measurement system from impacting the results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated. In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or below the maximum of 200°C. Proper thermal design includes consideration of ambient temperature and the thermal resistance from ambient to the back of the package including heat sinking systems and air flow mechanisms. Incorporating the dissipated DC power, it is possible to calculate the junction temperature of the device DS120418 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 11 of 11