ON MMBD6100LT1 Monolithic dual switching diode Datasheet

MMBD6100LT1
Monolithic Dual
Switching Diode
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MAXIMUM RATINGS (EACH DIODE)
Symbol
Rating
Value
Unit
VR
Reverse Voltage
70
Vdc
IF
Forward Current
200
mAdc
Peak Forward Surge Current
500
mAdc
IFM(surge)
3
1
2
PLASTIC
SOT–23S
CASE 318
THERMAL CHARACTERISTICS
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Characteristic
Max
Unit
225
mW
1.8
mW/°C
Thermal Resistance, Junction to Ambient
556
°C/W
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
300
mW
2.4
mW/°C
Thermal Resistance, Junction to Ambient
417
°C/W
–55 to
+150
°C
Total Device Dissipation, FR–5 Board
TA = 25°C
Derate above 25°C
Junction and Storage
Temperature Range
(1)
0.062 in.
0.024 in. 99.5% alumina.
DEVICE MARKING
5BM
(1) FR– 5 = 1.0
0.75
(2) Alumina = 0.4
0.3
ANODE
1
3
CATHODE
2
ANODE
ORDERING INFORMATION
 Semiconductor Components Industries, LLC, 2000
April, 2000 – Rev. 1
1
Device
Package
Shipping
MMBD6100LT1
SOT–23S
3000/Tape & Reel
MMBD6100LT3
SOT–23S
10,000/Tape & Reel
Publication Order Number:
MMBD6100LT1/D
MMBD6100LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Symbol
Min
Max
Unit
V(BR)
70
—
Vdc
Reverse Voltage Leakage Current
(VR = 50 Vdc)
IR
—
0.1
µAdc
Forward Voltage
(IF = 1.0 mAdc)
(IF = 100 mAdc)
VF
0.55
0.8
0.7
1.1
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1)
trr
—
4.0
ns
Capacitance
(VR = 0 V)
C
—
2.5
pF
trr
t
Characteristic
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 µAdc)
Vdc
820 Ω
+10 V
2.0 k
100 µH
tr
0.1 µF
IF
tp
t
IF
10%
0.1 µF
90%
DUT
50 Ω OUTPUT
PULSE
GENERATOR
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
IR
VR
INPUT SIGNAL
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
iR(REC) = 1.0 mA
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
MMBD6100LT1
CURVES APPLICABLE TO EACH CATHODE
100
10
I R , REVERSE CURRENT (m A)
TA = 85°C
TA = –40°C
10
TA = 25°C
1.0
TA = 125°C
1.0
TA = 85°C
0.1
TA = 55°C
0.01
TA = 25°C
0.1
0.2
0.4
0.6
0.8
1.0
0.001
1.2
10
0
20
30
VF, FORWARD VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage
Figure 3. Leakage Current
1.0
CD, DIODE CAPACITANCE (pF)
I F, FORWARD CURRENT (mA)
TA = 150°C
0.9
0.8
0.7
0.6
0
2
4
6
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
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3
8
40
50
MMBD6100LT1
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
SOLDERING PRECAUTIONS
The power dissipation of the SOT–23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, RθJA, the thermal resistance from
the device junction to ambient, and the operating
temperature, TA. Using the values provided on the data
sheet for the SOT–23 package, PD can be calculated as
follows:
PD =
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 225 milliwatts.
PD =
150°C – 25°C
556°C/W
= 225 milliwatts
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 225
milliwatts. There are other alternatives to achieving higher
power dissipation from the SOT–23 package. Another
alternative would be to use a ceramic substrate or an
aluminum core board such as Thermal Clad. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
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4
MMBD6100LT1
PACKAGE DIMENSIONS
SOT–23S
PLASTIC PACKAGE
CASE 318–08
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
A
L
3
B S
1
V
2
G
C
D
H
J
K
DIM
A
B
C
D
G
H
J
K
L
S
V
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
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5
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
MMBD6100LT1
Notes
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MMBD6100LT1
Notes
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MMBD6100LT1
Thermal Clad is a trademark of the Bergquist Company
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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MMBD6100LT1/D
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