Austin MT5C2561 Mt5c2561 sram memory array Datasheet

SRAM
MT5C2561
Austin Semiconductor, Inc.
256K x 1 SRAM
PIN ASSIGNMENT
(Top View)
SRAM MEMORY ARRAY
AVAILABLE AS MILITARY
SPECIFICATIONS
• SMD 5962-88725
• SMD 5962-88544
• MIL-STD-883
24-Pin DIP (C)
(300 MIL)
A6
A7
A8
A9
A10
A11
A14
A15
A0
Q
WE\
Vss
FEATURES
•
•
•
•
High Speed: 35, 45, 55, and 70
Battery Backup: 2V data retention
Low power standby
High-performance, low-power, CMOS double-metal
process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE\
• All inputs and outputs are TTL compatible
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
Vcc
A5
A4
A3
A2
A1
A17
A16
A13
A12
D
CE\
28-Pin LCC (EC)
MARKING
A8
A7
A6
Vcc
A17
OPTIONS
3 2 1 28 27
• Timing
35ns access
45ns access
55ns access
70ns access
-35
-45
-55*
-70*
• Package(s)
Ceramic DIP (300 mil)
Ceramic LCC
C
EC
A12
D
CE\
Vss
WE\
GENERAL DESCRIPTION
The Austin Semiconductor SRAM family employs
high-speed, low-power CMOS and are fabricated using doublelayer metal, double-layer polysilicon technology.
For flexibility in high-speed memory applications,
Austin Semiconductor offers chip enable (CE\) on all organizations. This enhancement can place the outputs in High-Z for
additional flexibility in system design. The x1 configuration
features separate data input and output.
Writing to these devices is accomplished when write
enable (WE\) and CE\ inputs are both LOW. Reading is accomplished when WE\ remains HIGH and CE\ goes LOW. The
device offers a reduced power standby mode when disabled.
This allows system designs to achieve low standby power requirements.
These devices operate from a single +5V power supply and all inputs and outputs are fully TTL compatible.
L
*Electrical characteristics identical to those provided for the 45ns
access devices.
For more products and information
please visit our web site at
www.austinsemiconductor.com
MT5C2561
Rev. 2.5 1/01
NC
A4
A3
A2
A1
A17
A16
A13
NC
13 14 15 16 17
No. 106
No. 204
• Operating Temperature Ranges
Industrial (-40oC to +85oC)
IT
Military (-55oC to +125oC)
XT
• 2V data retention/low power
26
25
24
23
22
21
20
19
18
NC 4
A9 5
A10 6
A11 7
A14 8
A15 9
A0 10
Q 11
NC 12
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
SRAM
MT5C2561
Austin Semiconductor, Inc.
FUNCTIONAL BLOCK DIAGRAM
VCC
I/O CONTROL
D
ROW DECODER
A13
A14
A15
A16
A17
A0
A1
A2
A3
A4
GND
262,144-BIT
MEMORY ARRAY
Q
CE\
WE\
POWER
DOWN
COLUMN DECODER
A5
A6
A7
A8
A9
A10
A11 A12
TRUTH TABLE
MODE
CE\
STANDBY H
READ
L
WRITE
L
MT5C2561
Rev. 2.5 1/01
WE\
X
H
L
DQ
HIGH-Z
Q
HIGH-Z
POWER
STANDBY
ACTIVE
ACTIVE
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
SRAM
MT5C2561
Austin Semiconductor, Inc.
ABSOLUTE MAXIMUM RATINGS*
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the
operation section of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods
may affect reliability.
Voltage on Any Pin Relative to Vss..................................-0.5V to +7V
Voltage on Vcc Supply Relative to Vss.............................-0.5V to +7V
Voltage Applied to Q.........................................................-0.5V to +6V
Storage Temperature......................................................-65oC to +150oC
Power Dissipation..............................................................................1W
Short Circuit Output Current.........................................................50mA
Lead Temperature (soldering 10 seconds)....................................+260oC
Junction Temperature..................................................................+175oC
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < TC < 125oC; VCC = 5V +10%)
DESCRIPTION
Input High (Logic 1) Voltage
VIH
MIN
2.2
Input Low (Logic 0) Voltage
Input Leakage Current
VIL
-0.5
0.8
V
0V<VIN<VCC
ILI
-10
10
µA
Output(s) disabled
0V<VOUT<VCC
ILO
-10
10
µA
Output High Voltage
IOH = -4.0mA
VOH
2.4
Output Low Voltage
IOL = 8.0mA
VOL
Output Leakage Current
PARAMETER
Power Supply
Current: Operating
Power Supply
Current: Standby
CONDITIONS
SYM
MAX
UNITS
NOTES
VCC+0.5
V
1
1, 2
0.4
1
V
1
SYM
MAX
-35
-45
ICCSP
120
120
mA
3
ICCLP
100
100
mA
3
ISBT1
25
25
mA
ISBCSP
20
20
mA
ISBCLP
3
3
mA
CONDITIONS
CE\ < VIL; VCC = MAX
f = MAX = 1/tRC (MIN)
Output Open
V
UNITS NOTES
CE\ > VIH; All Other Inputs
< VIL or > VIH, VCC = MAX
f = 0 Hz
CE\ > VCC -0.2V; VCC = MAX
VIL < VSS +0.2V
VIH > VCC -0.2V; f = 0 Hz
"L" Version Only
CAPACITANCE
PARAMETER
Input Capacitance
Output Capacitance
MT5C2561
Rev. 2.5 1/01
CONDITIONS
o
TA = 25 C, f = 1MHz
Vcc = 5V
SYM
MAX
UNITS
NOTES
CI
10
pF
4
CO
12
pF
4
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
SRAM
MT5C2561
Austin Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Note 5) (-55oC < TC < 125oC; VCC = 5V +10%)
DESCRIPTION
READ CYCLE
READ cycle time
Address access time
Chip Enable access time
Output hold from address change
Chip Enable to output in Low-Z
Chip disable to output in High-Z
Chip Enable to power-up time
Chip disable to power-down time
WRITE CYCLE
WRITE cycle time
Chip Enable to end of write
Address valid to end of write
Address setup time
Address hold from end of write
WRITE pulse width
Data setup time
Data hold time
Write disable to output in Low-Z
Write Enable to output in High-Z
MT5C2561
Rev. 2.5 1/01
-35
SYMBOL
MIN
tRC
tAA
tACE
tOH
tLZCE
tHZCE
tPU
tPD
35
tWC
tCW
tAW
tAS
tAH
tWP
tDS
tDH
35
30
30
0
5
30
20
0
0
0
-45
MAX
MIN
UNITS
NOTES
45
ns
ns
ns
ns
ns
ns
ns
ns
7
6, 7
4
4
20
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
7
6, 7
45
35
35
3
3
45
45
3
3
20
0
20
0
35
tLZWE
tHZWE
MAX
15
45
40
40
0
5
40
20
0
0
0
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
SRAM
MT5C2561
Austin Semiconductor, Inc.
AC TEST CONDITIONS
Input pulse levels ...................................... Vss to 3.0V
Input rise and fall times ......................................... 5ns
Input timing reference levels ................................ 1.5V
Output reference levels ....................................... 1.5V
Output load ................................. See Figures 1 and 2
167Ω
Q
30pF
167Ω
VTH = 1.73V Q
5pF
Fig. 2 Output Load
Equivalent
Fig. 1 Output Load
Equivalent
allowing for actual tester RC time constant.
At any given temperature and voltage condition, tHZCE is
less than tLZCE, and tHZWE is less than tLZWE and tHZOE is
less than tLZOE.
8. WE\ is HIGH for READ cycle.
9. Device is continuously selected. Chip enable is held in
its active state.
10. Address valid prior to, or coincident with, latest
occurring chip enable.
11. tRC = Read Cycle Time.
12. Chip enable (CE\) and write enable (WE\) can initiate and
terminate a WRITE cycle.
NOTES
1.
2.
3.
4.
5.
6.
VTH = 1.73V
7.
All voltages referenced to VSS (GND).
-3V for pulse width < 20ns
ICC is dependent on output loading and cycle rates.
The specified value applies with the outputs
unloaded, and f =
1
Hz.
t
RC (MIN)
This parameter is guaranteed but not tested.
Test conditions as specified with the output loading
as shown in Fig. 1 unless otherwise noted.
tLZCE, tLZWE, tLZOE, tHZCE, tHZOE and tHZWE are
specified with CL = 5pF as in Fig. 2. Transition is
measured ±200mV typical from steady state voltage,
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)
DESCRIPTION
VCC for Retention Data
CONDITIONS
SYM
MIN
MAX
UNITS
VDR
2
---
V
NOTES
900
µA
---
ns
4
ns
4, 11
CE\ > (VCC - 0.2V)
Data Retention Current
VIN > (VCC - 0.2V)
or < 0.2V
VCC = 2V
Chip Deselect to Data
Retention Time
Operation Recovery Time
ICCDR
tCDR
0
tR
tRC
LOW Vcc DATA RETENTION WAVEFORM
DATA RETENTION MODE
VCC
4.5V
VDR > 2V
t CDR
CE\
VIH
VIL
1234
123456789
123
123456789
123
1234
123456789
123
1234
123456789
123
1234
4.5V
tR
VDR
12345678
1234
123
12345678
1234
123
12345678
1234
123
12345678
1234
123
123
123
123
123 DON’T CARE
1234
1234
1234
1234UNDEFINED
MT5C2561
Rev. 2.5 1/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
SRAM
MT5C2561
Austin Semiconductor, Inc.
READ CYCLE NO. 1
8, 9
ttRC
RC
ADDRESS
VALID
ttAA
AA
ttOH
OH
DQ
PREVIOUS DATA VALID
DATA VALID
READ CYCLE NO. 2 7, 8, 10
ttRC
RC
CE\
ttLZCE
LZCE
tACE
tACE
t
HZCE
tHZCE
DQ
DATA VALID
ttPU
PU
ttPD
PD
Icc
MT5C2561
Rev. 2.5 1/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
6
SRAM
MT5C2561
Austin Semiconductor, Inc.
WRITE CYCLE NO. 1 12
(Chip Enabled Controlled)
t
WC
tWC
ADDRESS
tAW
tAW
ttAS
AS
t
AH
tAH
tCW
tCW
CE\
t WP
tWP1
123456789012345678901
1
1
WE\ 123456789012345678901
1123456789012345678901234567890121234567890
1123456789012345678901234567890121234567890
t DH
tDH
ttDS
DS
D
DATA VAILD
Q
HIGH Z
WRITE CYCLE NO. 2 7, 12
(Write Enabled Controlled)
tWC
tWC
ADDRESS
tAW
tAW
12345678901234567
12
12
12345678901234567
121
CE\ 12345678901234567
ttAS
AS
WE\
ttAH
AH
tCW
tCW
12345678901234567890123
1
1212345678901234567890123
112345678901234567890123
t WP
tWP1
123456789
123456789
123456789
tDS
t
1234567890123456
1
1
1234567890123456
11234
1234
1 HZWE
1
1
Q 1234567890123456
11234
1234
1
1234567890123456
D
DATA VALID
HIGH-Z
t DH
tDH
121234561
tLZWE1234
1234
121234561
1234
12
1
1234
12123456
1234561
123
123 DON’T CARE
123
1234
1234
1234
1234 UNDEFINED
NOTE: Output enable (OE\) is inactive (HIGH).
MT5C2561
Rev. 2.5 1/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
7
SRAM
MT5C2561
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #106 (Package Designator C)
SMD #5962-88544 & #5962-88725, Case Outline L
D
A
Q
Pin 1
L
S1
e
b
b2
E
NOTE
0o to 15o
c
eA
SMD SPECIFICATIONS
MIN
MAX
SYMBOL
A
--0.200
b
0.014
0.026
b2
0.045
0.065
c
0.008
0.018
D
--1.280
E
0.220
0.310
eA
0.300 BSC
e
0.100 BSC
L
0.125
0.200
Q
0.015
0.060
S1
0.005
--NOTE: These dimensions are per the SMD. ASI's package dimensional limits
may differ, but they will be within the SMD limits.
*All measurements are in inches.
MT5C2561
Rev. 2.5 1/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
8
SRAM
MT5C2561
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #204 (Package Designator EC)
SMD# 5962-88544, Case Outline X
D1
B2
D2
L2
e
E3
E
E1
E2
h x 45o
D
L
hx45 o
B1
D3
A
A1
SYMBOL
A
A1
B1
B2
D
D1
D2
D3
E
E1
E2
E3
e
h
L
L2
SMD SPECIFICATIONS
MIN
MAX
0.060
0.120
0.050
0.088
0.022
0.028
0.072 REF
0.342
0.358
0.200 BSC
0.100 BSC
--0.358
0.540
0.560
0.400 BSC
0.200 BSC
--0.558
0.050 BSC
0.040 REF
0.045
0.055
0.075
0.095
NOTE: These dimensions are per the SMD. ASI's package dimensional limits
may differ, but they will be within the SMD limits.
*All measurements are in inches.
MT5C2561
Rev. 2.5 1/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
SRAM
MT5C2561
Austin Semiconductor, Inc.
ORDERING INFORMATION
EXAMPLE: MT5C2561EC-70/XT
EXAMPLE: MT5C2561C-45L/IT
Device
Number
Package Speed
Options** Process
Type
ns
Device
Number
Package Speed
Options** Process
Type
ns
MT5C2561
C
-35
L
/*
MT5C2561
EC
-35
L
/*
MT5C2561
C
-45
L
/*
MT5C2561
EC
-45
L
/*
MT5C2561
C
-55
L
/*
MT5C2561
EC
-55
L
/*
MT5C2561
C
-70
L
/*
MT5C2561
EC
-70
L
/*
*AVAILABLE PROCESSES
IT = Industrial Temperature Range
XT = Extended Temperature Range
883C = Full Military Processing
-40oC to +85oC
-55oC to +125oC
-55oC to +125oC
** OPTIONS
L = 2V Data Retention/Low Power
MT5C2561
Rev. 2.5 1/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
10
SRAM
MT5C2561
Austin Semiconductor, Inc.
ASI TO DSCC PART NUMBER
CROSS REFERENCE*
ASI Package Designator C
ASI Package Designator EC
ASI Part #
MT5C2561C-35/883C
MT5C2561C-45/883C
MT5C2561C-55/883C
MT5C2561C-70/883C
SMD Part #
5962-8872501LX
5962-8872502LX
5962-8872503LX
5962-8872504LX
ASI Part #
MT5C2561EC-35/883C
MT5C2561EC-45/883C
MT5C2561EC-55/883C
MT5C2561EC-70/883C
SMD Part #
5962-8872501XX
5962-8872502XX
5962-8872503XX
5962-8872504XX
MT5C2561C-35L883C
MT5C2561C-45L883C
MT5C2561C-55L883C
MT5C2561C-70L883C
5962-8854401LX
5962-8854402LX
5962-8854403LX
5962-8854404LX
MT5C2561EC-35L883C
MT5C2561EC-45L883C
MT5C2561EC-55L883C
MT5C2561EC-70L883C
5962-8854401XX
5962-8854402XX
5962-8854403XX
5962-8854404XX
* ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
MT5C2561
Rev. 2.5 1/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
11
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