IXYS EVDI430MYI 30a ultra fast mosfet / igbt driver evaluation board Datasheet

EVDD430S / EVDD430CY
30A Ultra Fast MOSFET / IGBT Driver Evaluation Boards
General Description
The EVDD430S / EVDD430CY evaluation boards are
general-purpose circuit boards designed to simplify the
evaluation of the IXYS IXDS430, IXDD430, IXDI430, and
IXDN430 MOSFET / IGBT driver, as well as to provide a
building block for power circuit development. Any of three IC
package types, SOIC-28, 5 lead TO-220, and 5 lead TO-263
are available on two different boards. The board layouts
enable the use of MOSFETs or IGBTs in the TO-247, TO-264
or SOT-227 packages and also allow the driven devices to
be mounted to a heat sink. In doing so, the board
assemblies can be used as a ground referenced, low side
power switch for both single-ended and push-pull
configurations. The board layout for all three driver packages
allows the device tabs to be soldered or strapped to a
ground plane for improved cooling in high-power, high
frequency applications with large MOSFET devices. The
layouts have also been optimized for minimal trace routing
and maximized area to reduce inductance and enhance
performance.
Figures 1and 2 are photographs of the front and back of the
EVDD430CY board loaded with an IXDI430CI TO-220 driver
while figures 3 and 4 show the EVDD430S board equipped
with the IXDS430S 28 pin SOIC package. The low level
inputs are shown at various points on the boards. The
'Signal In' is a TTL or CMOS level compatible input which
controls the on or off state of the power device Q1or Q2.
'Disable' is a optional input, depending on which device is
installed, and controls the Tri-State output (IXDD430, and
IXDS430 devices only). The Tri-State mode could be used in
a motor drive circuit in which an over current could be
detected and then a disabling signal fed back, to control the
turn off of an IGBT at a slower rate through a seperate 'bleed
off' resistor. The 'VCC-IN' is the low voltage (8.5-35V) supply
input. Figures 5 and 6 illustrate the mounting of a TO-247,
TO-264, SOT-227 power devices.
Circuit Operation
The schematic diagrams for the evaluation boards are
shown in Figures 8 and 9. The external drive signal is
applied to 'Signal In' test point. The PCBs also provide
solder pads across the 50 Ohm input resistor R4 so that a
coax can be soldered directly to the board.The PCBs have
been designed in an attempt to minimize parasitic
inductance associated with long and narrow traces. Large
attachment points have been provided so that the user can
connect larger wire or copper strap to minimize loop
inductance. The diode, resistor combination of DA and RA
provides a controlled rate discharge path for the gate of the
power device when the Enable function forces the driver into
its Tri-State mode. In this mode, the turn-off time of the
power device is determined by the time constant of the input
gate capacitance Ciss and the value of the resistor RA. RA
has not been loaded so that the user may choose the value
which best suits the design.
The drive output is attached to the MOSFET / IGBT via the
gate drive resistor positions. The resistors can be replaced
with values to optimize the turn on, turn off performance of
the design. The IXDS430S also includes seperate drive
output source / sink pins and the EVDD430S evaluation
board is arranged such that the turn on rate can be different
from the turn off rate via the seperated output pins of the
device. The IXD_430 C and Y output pins are internally
connected and have just one set of gate resistors.
Finally, the devices are available with an undervoltage trip
point of 8.5V or 11.75V, see order table. If the supply voltage
dips below this fixed point, drive to the power device is
disabled. This feature is selectable on the EVDD430S PCB
by way of JP2 while JP1 provides the option to invert the
drive signal.
Ordering Information
Part Number
Companion Device (1)
Options
EVDD430CI
IXDD430CI
TO-220
UV = 11.75 NI with Enable
EVDD430MCI
IXDD430MCI
TO-220
UV = 8.5
NI with Enable
EVDD430YI
IXDD430YI
TO-263
UV = 11.75 NI with Enable
EVDD430MYI
IXDD430MYI
TO-263
UV = 8.5
NI with Enable
EVDI430CI
IXDI430CI
TO-220
UV = 11.75 Inverting
EVDI430MCI
IXDI430MCI
TO-220
UV = 8.5
Inverting
EVDI430YI
IXDI430YI
TO-263
UV = 11.75 Inverting
EVDI430MYI
IXDI430MYI
TO-263
UV = 8.5
Inverting
EVDN430CI
IXDN430CI
TO-220
UV = 11.75 NI
EVDN430MCI
IXDN430MCI
TO-220
UV = 8.5
NI
EVDN430YI
IXDN430YI
TO-263
UV = 11.75 NI
EVDN430MYI
IXDN430MYI
TO-263
UV = 8.5
NI
EVDS430SI
IXDS430SI
28 pin SOIC
UV / Invert = Selectable w/ Enable
UV = Under Voltage Trip Point, NI = Non Inverting
(1) Companion device to be mounted by user.
Copyright © IXYS CORPORATION 2003
First Release
EVDD430S/EVDD430CY
Figure 1 EVDD430CY Evaluation board
with 5 lead TO-220 driver installed.
Figure 2
Figure 3
EVDD430CY Evaluation board, back side.
Device leads
Figure 4
EVDD430S Evaluation board.
EVDD430S Evaluation board, back side.
PCB
Clearance hole in PCB
TO-247, TO-264
Heat Sink
Heat Sink
Figure 5 Evaluation board side view showing a
installed in a high power configuration.
SOT-227
Insulator
power device
Figure 6 Evaluation board side view showing a SOT-227
power device installed in a high power configuration.
2
EVDD430S/EVDD430CY
Input
Function
Vcc In
Supply 8V-35V
GND
Ground
Signal In
External drive signal
Disable
High for device disable
INV**
Output inversion
UVSEL**
Under voltage select
** Available on the EVDD430S board only
The Evaluation Boards are supplied with either IXDD408YI,
IXDD409YI, IXDI409YI, IXDN409YI or IXDD414YI 5-Pin TO263 devices installed, depending upon the evaluation board
part number ordered. To use the evaluation board with a
different package type, the installed device must be removed, and the new device installed in the appropriate
location.
0.01UF 50V C18
0.01UF 50V C17
0.01UF 50V C16
TP1
0.01UF 50V C15
Vcc In
0.47UF 50V C14
JP2 open for UVSEL at 12.5V, jumpered for 8.5V
0.47UF 50V C13
JP1 open for non-inverted output, jumpered for inverted
0.47UF 50V C12
0.47UF 50V C11
Figure 7 - PCB Connection Table
4
5
6
7
Signal In
R11 220
8
9
Q3
11
R1 100
TP4
2
12
1
Disable
3
2N7000
10
R4
R2
49.9
1K
R6
13
10K
14
Vcc
N/C
OUT P
UVSEL
OUT P
N/C
IN
EN
INV
OUT P
OUT N
OUT N
OUT N
GND
GND
GND
GND
GND
GND
GND
GND
26
25
R7
24
Drain
1
TP5
23
R8
22
1
2
21
Q1
20
R9
1
1
3
TO-247
Q2
3
19
18
R10
2
SOT-227
1,4
1
17
16
15
RA
DA
Not Loaded
GND
0.01UF 50V NPO C16
0.01UF 50V NPO C15
+
+
10UF 35V C8
+
10UF 35V C7
0.01UF 50V NPO C14
0.01UF 50V NPO C13
+
10UF 35V C6
+
10UF 35V C5
0.47UF 50V C12
0.47UF 50V C11
+
10UF 35V C4
+
10UF 35V C3
+
10UF 35V C2
0.47UF 50V C9
TP1
10UF 35V C1
Vcc In
0.47UF 50V C10
TP2
Figure 8 EVDD430S Schematic Diagram
R3 10K
TP2
U1 / U2
2
CI / YI package
R1
1
Q2
TO-247
1
P1 Vcc
P2 OUT
3
TP3
R7 240
P4 IN
Q3
SOT-227
R2
1
P5 EN
3
R5 100
2
Q1
2N7000
1
TP4
3
2
1,4
P3 GND
Signal In
RA
Disable
R4 49.9
R6 1K
GND
DA
Not Loaded
TP5
Figure 9 - EVDD430CY Schematic Diagram
NOTE: The schematic shows two MOSFET devices. However only one device can be installed at any time.
3
+
+
10UF 35V C10
Vcc
27
+
10UF 35V C9
Vcc
+
10UF 35V C8
Vcc
Vcc
+
10UF 35V C7
Vcc
Vcc
+
10UF 35V C6
Vcc
+
10UF 35V C5
3
JP1 JP2
28
10UF 35V C4
2
R3
IXDS430
1
2K
TP3
+
U1
+
10UF 35V C3
10UF 35V C1
.1UF 100V C2
R5 3.32
EVDD430S/EVDD430CY
IXYS Corporation
3540 Bassett St; Santa Clara, CA 95054
Tel: 408-982-0700; Fax: 408-496-0670
e-mail: [email protected]
www.ixys.com
IXYS Semiconductor GmbH
Edisonstrasse15 ; D-68623; Lampertheim
Tel: +49-6206-503-0; Fax: +49-6206-503627
e-mail: [email protected]
4
Directed Energy, Inc.
An IXYS Company
2401 Research Blvd. Ste. 108
Ft. Collins, CO 80526
Tel: 970-493-1901; Fax: 970-493-1903
e-mail: [email protected]
www.directedenergy.com
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