FDG312P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. • Applications • Load switch • Battery protection • Power management D -1.2 A, -20 V. RDS(on) = 0.18 Ω @ VGS = -4.5 V RDS(on) = 0.25 Ω @ VGS = -2.5 V. • Low gate charge (3.3 nC typical). • High performance trench technology for extremely low RDS(ON). • Compact industry standard SC70-6 surface mount package. S 1 6 2 5 3 4 D SC70-6 D D G Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage V ID Drain Current (Note 1) ±8 -1.2 -6 A PD Power Dissipation for Single Operation W TJ, Tstg - Continuous - Pulsed (Note 1a) 0.75 (Note 1b) 0.55 (Note 1c) 0.48 Operating and Storage Junction Temperature Range -55 to +150 °C 260 °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) Package Outlines and Ordering Information Device Marking .12 1999 Fairchild Semiconductor Corporation Device Reel Size Tape Width Quantity FDG312P 7’’ 8mm 3000 units FDG312P Rev. C FDG312P February 1999 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C BVDSS Drain-Source Breakdown Voltage ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V IGSSF Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 µA nA IGSSR Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA On Characteristics -20 V mV/°C -19 -1 (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = -250 µA, Referenced to 25°C 2.5 0.135 0.200 0.187 ID(on) On-State Drain Current VGS = -4.5 V, ID = -1.2 A VGS = -4.5 V, ID = -1.2 A @125°C VGS = -2.5 V, ID = -1 A VGS = -4.5 V, VDS = -5 V gFS Forward Transconductance VDS = -5 V, ID = -1.2 A 3.8 VDS = -10 V, VGS = 0 V, f = 1.0 MHz 330 pF 80 pF 35 pF -0.4 -0.9 -1.5 V mV/°C 0.18 0.29 0.25 -3 Ω A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) tf Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 2) VDD = -5 V, ID = -0.5 A, VGS = -4.5 V, RGEN = 6 Ω 7 15 ns 12 22 ns Turn-Off Delay Time 16 26 ns Turn-Off Fall Time 5 12 ns 3.3 5 nC VDS = -10 V, ID = -1.2 A, VGS = -4.5 V 0.8 nC 0.7 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.6 A (Note 2) -0.83 -0.6 A -1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. a) 170°C/W when mounted on a 1 in2 pad of 2oz copper. b) 225°C/W when mounted on a half of package sized 2oz. copper. c) 260°C/W when mounted on a minimum pad of 2oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDG312P Rev. C FDG312P DMOS Electrical Characteristics FDG312P Typical Characteristics 5 R DS(on), NORMALIZED - ID , DRAIN-SOURCE CURRENT (A) V GS= -4.5V -3.5V -3.0V -2.5V 4 3 -2.0V 2 1 -1.5V DRAIN-SOURCE ON-RESISTANCE 2.4 6 2.2 1.6 -2.5V 1.4 -3.0V -3.5V 1.2 -4.0V -4.5V 1 0.8 0 0 0 1 2 -V DS 3 3 4 5 6 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.5 R DS(ON) , ON-RESISTANCE (OHM) I D = -1.2A V GS = -4.5V 1.4 1.2 1 0.8 0.6 -50 I D = -0.6A 0.4 0.3 TJ = 125°C 0.2 0.1 TJ = 25°C 0 -25 0 25 50 75 100 125 1 150 2 3 4 5 -VGS , GATE TO SOURCE VOLTAGE (V) TJ , JUNCTION TEMPERATURE (°C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 TJ = -55°C -I D , DRAIN CURRENT (A) V DS = -5V 3 - I S , REVERSE DRAIN CURRENT (A) 4 25°C 125°C 2 1 0 0.5 2 - I D , DRAIN CURRENT (A) , DRAIN-SOURCE VOLTAGE (V) 1.6 DRAIN-SOURCE ON-RESISTANCE 1 4 Figure 1. On-Region Characteristics. R DS(ON), NORMALIZED VGS = -2.0V 2 1.8 1 1.5 2 -VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2.5 VGS = 0V TJ = 125°C 1 25°C -55°C 0.1 0.01 0.001 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDG312P Rev. C (continued) 5 1000 I D = -1.2A VDS = -5V 4 -10V CAPACITANCE (pF) -V GS , GATE-SOURCE VOLTAGE (V) FDG312P Typical Characteristics -15V 3 2 Ciss 300 100 Coss Crss 30 1 f = 1 MHz VGS = 0 V 0 0 1 2 3 10 0.1 4 0.2 Q g , GATE CHARGE (nC) Figure 7. Gate-Charge Characteristics. 5 1 L N) 10 20 IT IM o 10 0m s 1s 10s DC V GS = -4.5V SINGLE PULSE R θJA = 260°C/W T A = 25°C 0.2 0.5 RθJA= 260 C/W 24 10m s 0.3 0.01 0.1 SINGLE PULSE 1m s POWER (W) O S( RD o TA= 25 C 18 12 6 1 2 5 10 20 0 50 0.0001 -VDS , DRAIN-SOURCE VOLTAGE (V) 0.001 0.01 0.1 1 10 100 1000 SINGLE PULS E TIME (SEC) Figure 10. Single Pulse Maximum Power Dissipation. Figure 9. Maximum Safe Operating Area. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE -ID, DRAIN CURRENT (A) 2 30 3 0.03 1 Figure 8. Capacitance Characteristics. 10 0.1 0.5 -VDS , DRAIN TO SOURCE VOLTAGE (V) 0.5 D = 0.5 R θJA (t) = r(t) * R θJA R JA =260°C/W 0.2 θ 0.1 0.05 0.1 P(pk) 0.05 0.01 t1 0.02 Single Pulse 0.01 0.005 0.0001 0.001 t2 TJ - TA = P * R θJA (t) 0.01 0.1 1 Duty Cycle, D = t 1 / t 2 10 100 300 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. FDG312P Rev. C SC70-6 Tape and Reel Data and Package Dimensions SC70-6 Packaging Configuration: Figure 1.0 Customized Label Antistatic Cover Tape Conductive Embossed Carrier Tape F63TNR Label 21 21 21 21 Pin 1 SC70-6 Packaging Information Packaging Option Packaging type Standard (no flow code) TNR Qty per Reel/Tube/Bag 3,000 Reel Size D87Z 7” Dia 13” 184x187x47 343x343x64 Max qty per Box 9,000 20,000 Weight per unit (gm) 0.0055 0.0055 Weight per Reel (kg) 0.1140 0.3960 Box Dimension (mm) SC70-6 Unit Orientation TNR 10,000 343mm x 342mm x 64mm Intermediate box for D87Z Option F63TNR Barcode Label Note/Comments F63TNR Label F63TNR Label sample 184mm x 184mm x 47mm Pizza Box for Standard Option F63TNR Label LOT: CBVK741B019 QTY: 3000 FSID: NC7SC05M5 SPEC: D/C1: D9842 D/C2: SC70-6 Tape Leader and Trailer Configuration: Figure 2.0 QTY1: QTY2: SPEC REV: CPN: QARV: (F63TNR)2 Carrier Tape Cover Tape Components Trailer Tape 160mm minimum Leader Tape 390mm minimum December 1998, Rev. B SC70-6 Tape and Reel Data and Package Dimensions, continued SC70-6 Embossed Carrier Tape Configuration: Figure 3.0 P0 D0 T E1 F K0 Wc W E2 B0 Tc A0 D1 P1 User Direction of Feed Dimensions are in millimeter Pkg type A0 B0 SC70-6 (8mm) 3.24 +/-0.10 2.34 +/-0.10 W 8.0 +/-0.3 D0 D1 E1 E2 1.55 +/-0.05 1.00 +/-0.125 1.75 +/-0.10 F 6.25 min 3.50 +/-0.05 P1 P0 4.0 +/-0.1 4.0 +/-0.1 K0 T 1.20 +/-0.10 0.255 +/-0.150 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). Wc 0.06 +/-0.02 0.5mm maximum 20 deg maximum Typical component cavity center line B0 5.2 +/-0.3 Tc 0.5mm maximum 20 deg maximumcomponentrotation Typical component center line Sketch A (Side or Front Sectional View) A0 Component Rotation Sketch C (Top View) Component lateral movement Sketch B (Top View) SC70-6 Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max See detail AA Dim N 7” Diameter Option B Min Dim C See detail AA W3 13" Diameter Option Dim D min W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size Reel Option Dim A Dim B 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 2.165 55 0.331 +0.059/-0.000 8.4 +1.5/0 0.567 14.4 0.311 – 0.429 7.9 – 10.9 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 4.00 100 0.331 +0.059/-0.000 8.4 +1.5/0 0.567 14.4 0.311 – 0.429 7.9 – 10.9 8mm 7” Dia 7.00 177.8 8mm 13” Dia 13.00 330 Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) December 1998, Rev. B SC70-6 Tape and Reel Data and Package Dimensions, continued SC70-6 (FS PKG Code 76) 1:1 Scale 1:1 on letter size paper Part Weight per unit (gram): 0.0055 September 1998, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST FASTr™ GTO™ SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. E