Fairchild FMPA2151 2.4-2.5 ghz and 4.9-5.9 ghz dual band linear power amplifier module Datasheet

PRELIMINARY
FMPA2151
2.4–2.5GHz and 4.9–5.9GHz Dual Band Linear Power
Amplifier Module
Features
General Description
■
■
■
■
■
■
■
■
The FMPA2151 is a dual frequency band power amplifier
module designed for high performance WLAN
applications in the 2.4 to 2.5GHz and the 4.90 to 5.9GHz
frequency bands. The 16 pin 4 x 4 x 1.4 mm package with
internal matching on both input and output to 50Ω
minimizes next level PCB space and allows for simplified
integration. Only two external bias bypass capacitors are
required. The two on-chip detectors provide power
sensing capability. The PA’s low power consumption and
excellent linearity are achieved using our InGaP
Heterojunction Bipolar Transistor (HBT) technology.
Dual band operation in a single package design
Integrated bias bypass
>33dB modulated gain 2.4 to 2.5GHz band
>33dB modulated gain 4.9 to 5.9GHz band
3.0% EVM at 19dBm modulated power out (2.4GHz)
3.5% EVM at 19dBm modulated power out (5.5GHz)
3.3V positive supply operation
Separate integrated power detectors with 20dB
dynamic range
■ 16 pin 4 x 4 x 1.4mm leadless package
■ Internally matched to 50Ω and DC blocked RF
input/output
■ Optimized for use in 802.11a/b/g applications
Complimentary pin out available with part number
FMPA2153 for MIMO applications.
Device (4 x 4 x 1.4mm)
Z
X
21 Y T T
51
Electrical Characteristics(1) 802.11g (2.4-2.5 GHz) OFDM Modulation
(with 176 µs burst time, 100 µs idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth
Parameter
Min.
Typ.
Max.
Units
Frequency
2.4
2.5
GHz
Collector Supply Voltage
3.0
3.3
3.6
V
Mirror Supply Voltage (PA ON 2.4)
2.6
3.0
3.6
V
Mirror Supply Current (PA ON 2.4)
0.1
mA
Gain
31
dB
Average Packet Current @ +19dBm Pout
140
mA
EVM @ +19dBm Pout(2)
3.0
%
Detector Output @ +19dBm Pout
600
mV
Detector Output @ +7dBm Pout
280
mV
POUT Spectral Mask Compliance(3)
+20
dBm
Notes:
1. VCC = 3.3V, PA ON 2.4 = 3.3V, TA = 25°C, PA is constantly biased, 50Ω system.
2. Percentage includes system noise floor of EVM = 0.8%.
3. Measured at PIN at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied.
©2006 Fairchild Semiconductor Corporation
FMPA2151 Rev. D
1
www.fairchildsemi.com
FMPA2151 2.4–2.5GHz and 4.9–5.9GHz Dual Band Linear Power Amplifier Module
August 2006
PRELIMINARY
(with 176 µs burst time, 100 µs idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth
Parameter
Min.
Frequency
4.9
Collector Supply Voltage
3.0
Mirror Supply Voltage (PA ON 5.5)
2.6
Mirror Supply Current (PA ON 5.5)
Typ.
Max.
Units
5.9
GHz
3.3
3.6
V
3.0
3.6
V
0.1
mA
Gain
33
dB
Average Packet Current @ +19dBm Pout
240
mA
EVM @ +19dBm Pout(2) (4.9 to 5.9GHz)
3.5
%
Detector Output @ +19dBm Pout
600
mV
Detector Output @ +7dBm Pout
375
mV
POUT Spectral Mask Compliance(3)
+20
dBm
Absolute Maximum Ratings(4)
Symbol
Parameter
VCC
Positive Supply Voltage
ICC
Supply Current
PA ON
Pin
Tcase
Tstg
Ratings
Units
6
V
500
mA
Positive Bias Voltage
4
V
RF Input Power
0
dBm
Case Operating Temperature
-40 to +85
°C
Storage Temperature
-55 to +150
°C
Notes:
1. VCC = 3.3V, PA ON 5.5 = 3.3V, TA = 25°C, PA is constantly biased, 50Ω system.
2. Percentage includes system noise floor of EVM = 0.8%.
3. Measured at PIN at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied.
4. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.
2
FMPA2151 Rev. D
www.fairchildsemi.com
FMPA2151 2.4–2.5GHz and 4.9–5.9GHz Dual Band Linear Power Amplifier Module
Electrical Characteristics(1) 802.11a OFDM Modulation
PRELIMINARY
FMPA2151 2.4–2.5GHz and 4.9–5.9GHz Dual Band Linear Power Amplifier Module
Schematic
PA ON 2.4
VCC1 2.4
Pin
VDET 2.4
1µF
16
15
14
13
1
RF IN 5.5
50Ω
2
50Ω
3
Z
XYTT
2151
RF IN 2.4
12
11
50Ω
10
50Ω
RF OUT 2.4
RF OUT 5.5
9
4
5
6
7
8
1µF
VDET 5.5
PA ON 5.5
VCC2 5.5
Description
1
GND
2
RF IN 2.4
3
RF IN 5.5
4
GND
5
PA ON 5.5
6
GND
7
VCC2 5.5
8
VDET 5.5
9
GND
10
RF OUT 5.5
11
RF OUT 2.4
12
GND
13
VDET 2.4
14
VCC1 2.4
15
GND
16
PA ON 2.4
17
CENTER GND
Package Outline
TOP VIEW
12 11 10 9
Z
13
14
15
16
I/O 1 INDICATOR
8
XYTT
2151
1
2
3
7
Z
X
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51
6
5
4
1.40 Max.
1.02 TYP.
0.30
TYP.
FRONT VIEW
SEE DETAIL A
1
0.65
TYP.
2
0.10
TYP.
0.30
TYP.
0.650
4.00±0.10
2.70
0.650
2.70
4.00±0.10
DETAIL A
TYP.
BOTTOM VIEW
3
FMPA2151 Rev. D
0.30
www.fairchildsemi.com
PRELIMINARY
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(a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the user.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
4
FMPA2151 Rev. D
www.fairchildsemi.com
FMPA2151 2.4–2.5GHz and 4.9–5.9GHz Dual Band Linear Power Amplifier Module
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