BC184 0.1 A, 45 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES The BC184 is complementary silicon planar epitaxial transistors for use in AF small signal amplifiers and drivers, as well as for low noise pre-amplifiers applications. Both types feature good linearity of DC current gain. G H J A Collector 1 REF. D A B C D E F G H J K B K 2 E C F Base 3 Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO 45 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 6 V Collector Current - Continuous IC 0.1 A Collector Power Dissipation PC 350 mW TJ, TSTG 150, -55~150 °C Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) SYMBOL MIN TYP MAX UNIT Collector to Base Breakdown Voltage PARAMETER V(BR)CBO 45 - - V TEST CONDITION Collector to Emitter Breakdown Voltage V(BR)CEO 30 - - V IC=2mA, IB = 0A Emitter to Base Breakdown Voltage V(BR)EBO 6 - - V IE=0.1mA, IC = 0A Collector Cut-Off Current ICBO - - 15 nA VCB=30 V, IE = 0 A Collector Cut-Off Current ICEO - - 0.1 µA VCE=30 V, IB = 0 A Emitter Cut-Off Current IEBO - - 15 nA VEB=4 V, IC =0 mA DC Current Gain hFE 240 - 900 Collector to Emitter Saturation Voltage VCE(sat) - - 0.6 V IC=0.1A, IB=5mA Base to Emitter Voltage IC=10µA, IE = 0A VCE=5V, IC=2mA VBE(sat) - - 1.2 V IC=0.1A, IB=5mA Collector Output Capacitance Cob - - 5 pF VCB = 10V, IC = 0 A, f=1MHz Input Capacitance Cib - 8 - pF Transition Frequency fT 150 - - MHz NF - - 4 dB Noise Figure VBE = 0.5V, IC = 0 A, f=1MHz VCE = 5V, IC = 10mA, f=100MHz VCE =5V, IC = 0.2mA, f=1KHz, RS=2W CLASSIFICATION OF hFE Rank Range http://www.SeCoSGmbH.com/ 5-Mar-2010 Rev. A BC184B BC184C 240-500 450-900 Any changes of specification will not be informed individually. Page 1 of 2 BC184 Elektronische Bauelemente 0.1 A, 45 V NPN Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 5-Mar-2010 Rev. A Any changes of specification will not be informed individually. Page 2 of 2