POINN BULD85KC Npn silicon transistor with integrated diode Datasheet

BULD85KC
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
Copyright © 1997, Power Innovations Limited, UK
●
Designed Specifically for High Frequency
Electronic Ballasts
●
Integrated Fast trr Anti-Parallel Diode,
Enhancing Reliability
●
Diode trr Typically 1 µs
●
Tightly Controlled Transistor Storage Times
●
Voltage Matched Integrated Transistor and
Diode
●
Characteristics Optimised for Cool Running
●
Diode-Transistor Charge Coupling
Minimised to Enhance Frequency Stability
MAY 1994 - REVISED SEPTEMBER 1997
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
device symbol
C
description
The new BULDxx range of transistors have been
designed specifically for use in High Frequency
Electronic Ballasts (HFEB’s). This range of
switching transistors has tightly controlled
storage times and an integrated fast trr antiparallel diode. The revolutionary design ensures
that the diode has both fast forward and reverse
recovery times, achieving the same performance
as a discrete anti-parallel diode plus transistor.
The integrated diode has minimal charge
coupling with the transistor, increasing frequency
stability, especially in lower power circuits where
the circulating currents are low. By design, this
new device offers a voltage matched integrated
transistor and anti-parallel diode.
B
E
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-emitter voltage (V BE = 0)
VCES
600
V
Collector-base voltage (IE = 0)
VCBO
600
V
Collector-emitter voltage (IB = 0)
VCEO
400
V
Emitter-base voltage
V EBO
9
V
IC
6
A
ICM
8
A
IB
2
A
Peak base current (see Note 1)
IBM
4
A
Continuous device dissipation at (or below) 25°C case temperature
Ptot
70
W
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Maximum average continuous diode forward current at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTE
IE(av)
0.5
A
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
1: This value applies for tp = 10 ms, duty cycle ≤ 2%.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BULD85KC
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1994 - REVISED SEPTEMBER 1997
electrical characteristics at 25°C case temperature
PARAMETER
V CEO(sus)
cut-off current
Emitter cut-off
IEBO
current
V BE(sat)
VCE(sat)
V EC
sustaining voltage
Collector-emitter
ICES
hFE
Collector-emitter
Base-emitter
saturation voltage
IC =
0.1 A
TEST CONDITIONS
MIN
L = 25 mH
400
µA
VEB =
IC = 0
1
mA
0.85
1.1
V
0.2
0.5
0.4
1
IB =
9V
0.2 A
IC =
1A
IB =
0.2 A
IC =
1A
0.4 A
IC =
2A
forward voltage
V
10
IB =
Anti-parallel diode
UNIT
VBE = 0
saturation voltage
transfer ratio
MAX
VCE = 600 V
Collector-emitter
Forward current
TYP
VCE = 10 V
IC = 0.01 A
VCE =
1V
IC =
1A
VCE =
5V
IC =
2A
IE =
1A
(see Notes 2 and 3)
(see Notes 2 and 3)
10
(see Notes 2 and 3)
17.5
10
15
20
10
15.5
20
1.2
1.5
(see Notes 2 and 3)
V
V
NOTES: 2. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
3. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located
within 3.2 mm from the device body.
thermal characteristics
MAX
UNIT
RθJA
Junction to free air thermal resistance
PARAMETER
MIN
TYP
62.5
°C/W
RθJC
Junction to case thermal resistance
1.78
°C/W
MAX
UNIT
switching characteristics at 25°C case temperature
PARAMETER
trr
NOTE
TEST CONDITIONS
Anti-parallel diode
Measured by holding transistor
reverse recovery time
in an off condition, VEB = -3 V.
MIN
(see Note 4)
TYP
1
µs
4: Tested in a typical High Frequency Electronic Ballast.
inductive-load switching characteristics at 25°C case temperature
PARAMETER
tsv
TEST CONDITIONS
Storage time
MIN
IC = 1 A
IB(on) = 0.2 A
VCC = 40 V
L = 1 mH
IB(off) = 0.2 A
V CLAMP = 300 V
TYP
MAX
UNIT
4
5
µs
TYP
MAX
UNIT
150
200
ns
resistive-load switching characteristics at 25°C case temperature
PARAMETER
tfi
Current fall time
PRODUCT
2
TEST CONDITIONS
IC = 1 A
IB(on) = 0.2 A
V CC = 300 V
IB(off) = 0.2 A
INFORMATION
MIN
BULD85KC
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1994 - REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
ANTI-PARALLEL DIODE
INSTANTANEOUS FORWARD CURRENT
vs
INSTANTANEOUS FORWARD VOLTAGE
FORWARD CURRENT TRANSFER RATIO
vs
COLLECTOR CURRENT
LDX85CHF
30
LDX85CVF
10
TC = 25°C
IE - Instantaneous Forward Current - A
hFE - Forward Current Transfer Ratio
TC = 25°C
10
VCE = 1 V
VCE = 5 V
VCE = 10 V
3·0
0·01
1·0
0·1
0·01
0·1
1·0
10
0
IC - Collector Current - A
0·5
1·0
1·5
2·0
2·5
VEC - Instantaneous Forward Voltage - V
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
CASE TEMPERATURE
LDX85CVB
VBE(sat) - Base-Emitter Saturation Voltage - V
1.0
IC = 1 A
IB = 0.2 A
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 3.
PRODUCT
INFORMATION
3
BULD85KC
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1994 - REVISED SEPTEMBER 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
10
MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA
LDX85CFB
LDX85CRB
10
TC = 25°C
IB(on) = IC / 5
VBE(off) = -5 V
TC
= 25°C
IC - Collector Current - A
IC - Collector Current - A
8
1·0
0·1
tp = 100 µs
tp = 1 ms
tp = 10 ms
DC Operation
0·01
1·0
6
4
2
0
10
100
1000
0
100
VCE - Collector-Emitter Voltage - V
200
300
400
500
600
700
VCE - Collector-Emitter Voltage - V
Figure 4.
Figure 5.
THERMAL INFORMATION
ZθJA/Rθ JA - Normalised Transient Thermal Impedance
THERMAL RESPONSE JUNCTION TO AMBIENT
vs
POWER PULSE DURATION
60%
40%
TA = 25°C
20%
10%
0·1
0·01
t1
0%
duty cycle = t1/t2
Read time at end of t1,
t2
Z

T J ( max ) – T A = P D ( peak ) •  θ JA  • R θ JA ( max)
R
 θ JA 
0·001
10-4
10 -3
10 -2
10-1
100
t1 - Power Pulse Duration - s
Figure 6.
PRODUCT
4
LDX85CZA
1·0
INFORMATION
101
102
103
800
BULD85KC
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1994 - REVISED SEPTEMBER 1997
THERMAL INFORMATION
Zθ JC/Rθ JC - Normalised Transient Thermal Impedance
THERMAL RESPONSE JUNCTION TO CASE
vs
POWER PULSE DURATION
LDX85CZC
1·0
TC = 25°C
60%
40%
20%
10%
0%
0·1
t1
duty cycle = t1/t2
Read time at end of t1,
t2
Z

T J ( max ) – T C = P D ( peak) •  θ JC  • R θ JC ( max )
R
 θ JC 
0·01
10-4
10 -3
10-2
10-1
100
101
102
t1 - Power Pulse Duration - s
Figure 7.
MAXIMUM POWER DISSIPATION JUNCTION TO AMBIENT
vs
POWER PULSE DURATION
1000
LDX85CPA
Ptot - Maximum Power Dissipation - W
TA = 25°C
0%
100
10%
10
20%
40%
60%
1·0
10-4
10-3
10-2
10-1
10 0
101
102
103
t1 - Power Pulse Duration - s
Figure 8.
PRODUCT
INFORMATION
5
BULD85KC
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1994 - REVISED SEPTEMBER 1997
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION JUNCTION TO CASE
vs
POWER PULSE DURATION
Ptot - Maximum Power Dissipation - W
1000
0%
TC = 25°C
10%
20%
40%
60%
100
10
10-4
10-3
10-2
10-1
t1 - Power Pulse Duration - s
Figure 9.
PRODUCT
6
LDX85CPC
INFORMATION
100
101
102
BULD85KC
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1994 - REVISED SEPTEMBER 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
ø
10,4
10,0
3,96
3,71
1,32
1,23
2,95
2,54
see Note B
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
1,70
1,07
0,97
0,61
1
2
14,1
12,7
3
2,74
2,34
5,28
4,88
VERSION 1
0,64
0,41
2,90
2,40
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
PRODUCT
MDXXBE
INFORMATION
7
BULD85KC
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1994 - REVISED SEPTEMBER 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
PRODUCT
8
INFORMATION
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