NPN Epitaxial Planar Transistor Data Sheet Mechanical Dimensions FMMT458 Description .110 .060 3 3 .037 2 2 1 .115 .037 .016 2 3 1 1 .043 SOT-23 .016 .004 Maximum Ratings Ratings Collector - Emitter Voltage Symbol VCEO Value 400 Units V Collector - Base Voltage VCBO 400 V Emitter - Base Voltage VEBO 5.0 V IC PD 225 500 mA mW TJ, TSTG -55 to 150 Collector Current Total Device Dissipation TA = 25oC Junction and Storage Temperature C o Electrical Characteristics @ 25 C o Symbol VBR(CEO) Min 400 Max --- Unit V Collector - Base Breakdown Voltage (IC = 100µA) VBR(CBO) 400 --- V Emitter - Base Breakdown Voltage (IE = 100µA) VBR(EBO) 5.0 --- V Collector Cutoff Current (VCB = 320V, IE = 0) ICBO --- 0.1 µA Emitter Cutoff Current (VEB = 4.0V, IC = 0) IEBO --- 0.1 µA Static Forward Current Transfer Ratio (IC = 1.0 mA, VCE = 10 V) (IC = 50 mA, VCE = 10 V) (IC = 100 mA, VCE = 10 V) h FE 100 100 15 300 --- 0.5 Characteristic Collector - Emitter Breakdown Voltage (IC = 10mA) Collector - Emitter Saturation Voltage (IC = 50 mA, IB = 6.0 mA) VCE(sat) Base - Emitter Saturation Voltage (IC = 50 mA, IB = 5.0 mA) VBE(sat) V --- 0.9 V Current - Gain - Bandwidth Product (IC = 10 mA, VCE = 20 V, f = 100 MHz) fT 50 --- MHz Output Capacitance (VCB = 20 V, f = 1.0 MHz) Cob --- 5.0 pF Switching Characteristics (IC = 50 mA, VCC = 100 V) (IB1 = 5.0 mA, IB2 = 10 mA) Ton Toff 35 (TYP) 2260 (TYP) ns ns