Previous Datasheet Index Next Data Sheet PD - 5.025A CPV364MU Ultra-Fast IGBT IGBT SIP MODULE Features • • • • 1 Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve 3 D1 Q1 9 D3 Q3 15 4 6 D2 Q2 Product Summary 12 D5 Q5 10 D4 Q4 7 18 16 D6 Q6 13 19 Output Current in a Typical 20 kHz Motor Drive 5.4 ARMS per phase (1.7 kW total) with T C = 90°C, T J = 125°C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 80% (See Figure 1) Description The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. IMS-2 Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM IF @ T C = 100°C IFM VGE VISOL PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current, each IGBT Continuous Collector Current, each IGBT Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Isolation Voltage, any terminal to case, 1 min. Maximum Power Dissipation, each IGBT Maximum Power Dissipation, each IGBT Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. Units 600 20 10 60 60 9.3 60 ±20 2500 63 25 -40 to +150 V A V VRMS W °C 300 (0.063 in. (1.6mm) from case) 5-7 lbf•in (0.55-0.8 N•m) Thermal Resistance Parameter RθJC (IGBT) RθJC (DIODE) RθCS (MODULE) Wt Junction-to-Case, each IGBT, one IGBT in conduction Junction-to-Case, each diode, one diode in conduction Case-to-Sink,flat,greased surface Weight of module C-757 To Order Typ. Max. — — 0.1 20 (0.7) 2.0 3.0 — — Units °C/W g (oz) Revision 1 Previous Datasheet Index Next Data Sheet CPV364MU Electrical Characteristics @ TJ = 25°C (unless otherwise specified) VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ gfe ICES Gate Threshold Voltage Temp. Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current VFM Diode Forward Voltage Drop IGES Gate-to-Emitter Leakage Current V(BR)CES ∆V(BR)CES/∆TJ Min. Typ. Max. Units Conditions 600 — — V VGE = 0V, I C = 250µA — 0.63 — V/°C VGE = 0V, IC = 1.0mA — 2.0 2.6 IC = 10A V GE = 15V — 2.3 — V IC = 20A See Fig. 2, 5 — 1.7 — IC = 10A, T J = 150°C 3.0 — 5.5 VCE = VGE, IC = 250µA — -13 — mV/°C VCE = VGE, IC = 250µA 11 18 — S VCE = 100V, I C = 20A — — 250 µA VGE = 0V, V CE = 600V — — 3500 VGE = 0V, V CE = 600V, T J = 150°C — 1.3 1.7 V IC = 15A See Fig. 13 — 1.2 1.6 IC = 15A, T J = 150°C — — ±500 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets Cies Coes Cres trr Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge di(rec)M/dt Diode Peak Rate of Fall of Recovery During t b Min. — — — — — — — — — — — — — — — — — — — — — — — — — — Typ. 51 8.8 19 25 21 96 43 0.32 0.13 0.45 25 23 175 140 1.6 1500 190 17 42 74 4.0 6.5 80 220 188 160 Max. Units Conditions 67 IC = 20A 11 nC VCC = 400V 33 See Fig. 8 — TJ = 25°C — ns IC = 20A, V CC = 480V 190 VGE = 15V, R G = 10Ω 120 Energy losses include "tail" and — diode reverse recovery. — mJ See Fig. 9, 10, 11, 18 0.8 — TJ = 150°C, See Fig. 9, 10, 11, 18 — ns IC = 20A, V CC = 480V — VGE = 15V, R G = 10Ω — Energy losses include "tail" and — mJ diode reverse recovery. — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz 60 ns TJ = 25°C See Fig. 120 TJ = 125°C 14 I F = 15A 6.0 A TJ = 25°C See Fig. 10 TJ = 125°C 15 V R = 200V 180 nC TJ = 25°C See Fig. 600 TJ = 125°C 16 di/dt = 200A/µs — A/µs TJ = 25°C See Fig. — TJ = 125°C 17 Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) VCC=80%(V CES), VGE=20V, L=10µH, R G= 10Ω, ( See fig. 19 ) Pulse width ≤ 80µs; duty factor ≤ 0.1%. C-758 To Order Pulse width 5.0µs, single shot. Previous Datasheet Index Next Data Sheet 5.0 12 3.7 8 2.5 L oad C u rren t (A ) 16 TC = 90°C TJ = 125°C Power Factor = 0.8 Modulation Depth = 0.8 VC C = 60% of Rated Voltage 4 1.2 To tal O utput P ow er (kW ) CPV364MU 0 0 0.1 1 10 100 f, F re quenc y (kH z) Fig. 1 - RMS Current and Output Power, Synthesized Sine Wave 1000 IC , C o lle c to r-to -E m itte r C u rre n t (A ) I C , Collector-to-E m itter C urrent (A) 1000 TJ = 25 °C 100 T J = 1 50 °C 10 V G E = 1 5V 2 0µ s P U LS E W IDTH 1 1 100 TJ = 15 0°C T J = 25 °C 10 1 V C C = 1 00 V 5 µ s P UL S E W IDTH 0.1 10 5 V C E , C ollector-to-E m itter V oltage (V ) 10 15 V G E , G ate-to-E m itter V olta ge (V ) Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics C-759 To Order 20 S Previous Datasheet Index Next Data Sheet CPV364MU 3.5 VGE = 15V V C E , C ollector-to-E m itter V oltage (V ) Maximum DC Collector Current (A) 40 30 20 10 A 0 25 50 75 100 125 V G E = 15 V 80 µs P UL S E W ID TH I C = 40 A 3.0 2.5 I C = 20 A 2.0 I C = 1 0A 1.5 -60 150 TC , Case Temperature (°C) -40 -20 0 20 40 60 80 100 1 20 140 160 TC , C ase Tem perature (°C ) Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature Therm al R e sp onse (Z thJC ) 10 1 D = 0 .5 0 0.2 0 0.1 0 PD M 0 .05 0.1 t 0.0 2 0.0 1 0.01 0.00001 1 t S ING L E PU LS E (TH E R MAL R ES PO N S E) N o te s : 1 . D u ty fa c to r D = t 1 / t 2 2 2 . P e a k TJ = P D M x Z th J C + T C 0.0001 0.001 0.01 0.1 1 t 1 , R ectangular Pulse D uration (sec) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case C-760 To Order 10 Previous Datasheet Index Next Data Sheet CPV364MU 30 0 0 V G E , G a te -to -E m itte r V o lta g e (V ) 25 0 0 C, C apacitance (pF) 20 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc V C E = 40 0V I C = 20 A 16 Cies 20 0 0 12 Coes 15 0 0 10 0 0 Cres 500 8 4 0 0 1 10 0 100 10 V C E , C o llector-to-Em itter V oltage (V) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage VC C VG E TC IC 1.8 30 40 50 60 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 10 = 48 0V = 1 5V = 25 °C = 20 A T otal S w itch in g Los ses (m J ) T o ta l S w itc h in g L o s s e s (m J) 1.9 20 Q g , T o tal G a te C h a rg e (n C ) 1.7 1.6 1.5 1.4 R G = 10 Ω V GE = 1 5V V CC = 48 0V I C = 4 0A I C = 2 0A I C = 10 A 1 0.1 0 10 20 30 40 50 60 -60 R G , G a te R e s is ta n c e ( Ω ) W Fig. 9 - Typical Switching Losses vs. Gate Resistance -40 -20 0 20 40 60 80 100 120 140 160 TC , C ase Tem perature (°C ) Fig. 10 - Typical Switching Losses vs. Case Temperature C-761 To Order Previous Datasheet Index Next Data Sheet CPV364MU 5.0 1000 = 10 Ω = 1 50°C = 48 0V = 1 5V I C , C ollec tor-to -E m itter C u rre nt (A ) RG TC VCC VGE 4.0 3.0 2.0 1.0 0.0 VGGE E= 20 V T J = 12 5°C 100 S A FE O P E R A TIN G A R E A 10 1 0 10 20 30 40 50 1 10 100 V C E , C o lle cto r-to-E m itte r V olta g e (V ) I C , C o lle c to r-to -E m itte r C u rre n t (A ) Fig. 12 - Turn-Off SOA Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Instantaneous Forward Current - I F (A) T o ta l S w itc h in g L o s s e s (m J ) 6.0 10 TJ = 150°C TJ = 125°C TJ = 25°C 1 0.8 1.2 1.6 2.0 2.4 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current C-762 To Order 1000 Previous Datasheet Index Next Data Sheet CPV364MU 100 100 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 80 I IRRM - (A) t rr - (ns) I F = 30A I F = 30A 60 I F = 15A IF = 15A 10 I F = 5.0A 40 I F = 5.0A 20 100 1 100 1000 di f /dt - (A/µs) di f /dt - (A/µs) 1000 Fig. 15 - Typical Recovery Current vs. dif/dt Fig. 14 - Typical Reverse Recovery vs. dif/dt 800 1000 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C di(rec)M/dt - (A/µs) 600 Q RR - (nC) IF = 30A 400 I F = 15A IF = 5.0A I F = 5.0A I F = 15A I F = 30A 200 0 100 1000 di f /dt - (A/µs) Fig. 16 - Typical Stored Charge vs. dif/dt 100 100 di f /dt - (A/µs) Fig. 17 - Typical di(rec)M/dt vs. dif/dt C-763 To Order 1000 Previous Datasheet Index Next Data Sheet CPV364MU 90% Vge +Vge Same type device as D.U.T. Vce Ic 430µF 80% of Vce 90% Ic 10% Vce Ic D.U.T. 5% Ic td(off) tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig.18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf trr GATE VOLTAGE D.U.T. 10% +Vg Qrr = Ic ∫ trr id dt tx +Vg tx 10% Vcc 10% Irr Vcc DUT VOLTAGE AND CURRENT Vce Vpk Irr Vcc 10% Ic 90% Ic Ipk Ic DIODE RECOVERY WAVEFORMS tr td(on) 5% Vce t1 ∫ t2 Eon = Vce ie dt t1 DIODE REVERSE RECOVERY ENERGY t2 t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, ∫ t4 Erec = Vd id dt t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining E rec, trr, Qrr, Irr Defining E on, td(on), tr Refer to Section D for the following: Appendix D: Section D - page D-6 Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit Package Outline 5 - IMS-2 Package (13 pins) C-764 To Order Section D - page D-14