HANBit HMF1M32M4V Flash-ROM Module 4MByte (1Mx32Bit), 72Pin-SIMM, 3.3V Design Part No. HMF1M32M4V GENERAL DESCRIPTION The HMF1M32M4V is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a x32bit configuration. The module consists of four 1M x 8bit FROM mounted on a 72 -pin, single -sided, FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Four chip enable inputs, (/CE_1L, /CE_1H) are used to enable the module ’s 8 bits independently. Output enable (/OE) and write enable (/WE) can set the memory input and output. When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single + 3.3V DC power supply and all inputs and outputs are TTLcompatible. PIN ASSIGNMENT FEATURES PIN Symbol PIN Symbol PIN Symbol w Access time : 70, 80, 90, 120ns 1 Vss 25 DQ17 49 /WE w High-density 4MByte design 2 /RESET 26 DQ18 50 A18 w High-reliability, low-power design 3 DQ0 27 DQ19 51 A17 4 DQ1 28 DQ20 52 A16 5 DQ2 29 DQ21 53 A15 w Single + 3.3V ± 0.3V power supply w Easy memory expansion 6 DQ3 30 Vcc 54 A14 w All inputs and outputs are TTL-compatible 7 DQ4 31 DQ22 55 A13 w FR4-PCB design 8 DQ5 32 DQ23 56 A12 w Low profile 72-pin SIMM 9 DQ6 33 57 A11 w Minimum 1,000,000 write/erase cycle 10 Vcc 34 58 A10 w Sectors erase architecture 11 DQ7 35 /CE_1H NC(/CE_2H ) DQ24 59 Vcc w Sector group protection 12 /CE_1L 36 DQ25 60 A9 w Temporary sector group unprotection 13 NC(/CE_2L) 37 DQ26 61 A8 14 DQ8 38 DQ27 62 A7 15 DQ9 39 Vss 63 A6 16 DQ10 40 DQ28 64 A5 OPTIONS MARKING w Timing 17 DQ11 41 DQ29 65 A4 70ns access -70 18 DQ12 42 DQ30 66 A3 80ns access -80 19 DQ13 43 DQ31 67 A2 90ns access -90 20 DQ14 44 NC 68 A1 21 DQ15 45 NC 69 A0 22 NC 46 Vcc 70 NC(A20) 23 NC 47 A19 71 NC(A21) 24 DQ16 48 /OE 72 Vss 120ns access -120 w Packages 72-pin SIMM URL:www.hbe.co.kr REV.02 (August,2002) M 1 HANBit Electronics Co., Ltd. HANBit HMF1M32M4V FUNCTIONAL BLOCK DIAGRAM DQ0 - DQ31 A1 – A19 32 21 A0-A18 DQ15/A-1 A0 DQ 0-7 /CE /CE_1L /OE /WE U1 RY-BY /RESET A0-18 DQ15/A-1 DQ 8-15 /CE /CE_1L /OE /WE U2 RY-BY /RESET A0-18 DQ15/A-1 /CE_1H DQ16-23 /CE /OE /WE U3 RY-BY /RESET A0-18 DQ15/A-1 /CE_1H /CE /OE /OE /WE /WE DQ24-31 RY-BY /RESET /RESET URL:www.hbe.co.kr REV.02 (August,2002) U4 2 HANBit Electronics Co., Ltd. HANBit HMF1M32M4V TRUTH TABLE MODE /OE /CE /WE /RESET DQ ( /BYTE=L ) POWER STANDBY X H X Vcc±0.3V HIGH-Z STANDBY NOT SELECTED H L H H HIGH-Z ACTIVE READ L L H H DOUT ACTIVE WRITE or ERASE X L L H DIN ACTIVE NOTE: X means don’t care ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN,OUT -0.5V to Vcc+0.5V Voltage with respect to ground Vcc VCC -0.5V to +4.0V Power dissipation PD 4W Storage Temperature TSTG -65oC to +150oC Voltage with respect to ground all other pins Operating Temperature TA -55oC to +125 oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER SYMBOL MIN Vcc for ± 10% device Supply Voltages Vcc 2.7V Ground VSS 0 TYP. MAX 3.6V 0 0 DC AND OPERATING CHARACTERISTICS ( 0oC ≤ TA ≤ 70 oC ) PARAMETER TEST CONDITIONS SYMB OL MIN MAX UNIT Input Load Current Vcc=Vcc max, V IN= VSS to Vcc IL1 ±1.0 µA Output Leakage Current Vcc=Vcc max, V OUT= VSS to Vcc IL0 ±1.0 µA Output High Voltage IOH = -2.0mA, Vcc = Vcc min 0.85 x VOH V Vcc Output Low Voltage IOL = 4.0mA, Vcc =Vcc min /CE = VIL, VOL 5MHZ Vcc Active Read Current (1) 0.45 28(Tpy) 36 8(Tpy) 16 ICC1 /OE = VIH, 1MHZ V mA Vcc Active Write Current (2) /CE = VIL, /OE=VIH ICC2 60(Tpy) 120 mA Vcc Standby Current /CE, /RESET=Vcc±0.3V ICC3 0.8(Tpy) 20.0 µA VLKO 2.3 2.5 V Low Vcc Lock-Out Voltage Notes: 1. The Icc current listed is typically less than 2mA/MHz, with /OE at V IH. URL:www.hbe.co.kr REV.02 (August,2002) 3 HANBit Electronics Co., Ltd. HANBit HMF1M32M4V 2. Icc active while embedded algorithm (program or erase) is in progress 3. Maximum Icc current specifications are tested with Vcc=Vcc max ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER UNIT MIN. Sector Erase Time TYP. MAX. 0.7 15 - Chip Erase Time COMMENTS sec 24 Excludes 00H programming prior to erasure sec Byte Programming Time - 9 300 µs Chip Programming Time - 9 27 sec Excludes system-level overhead TSOP CAPACITANCE PARAMETER SYMBOL CIN PARAMETER DESCRIPTION TEST SETUP TYP. MAX UNIT VIN = 0 6 7.5 pF VOUT = 0 8.5 12 pF VIN = 0 7.5 9 pF Input Capacitance COUT Output Capacitance CIN2 Control Pin Capacitance o Notes : Test conditions TA = 25 C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER SYMBOLS Speed Options DESCRIPTION TEST SETUP UNIT JEDEC STANDARD tAVAV tRC Read Cycle Time -70R -80 -90 -120 Min 70 80 90 120 ns Max 70 80 90 120 ns Max 70 80 90 120 ns tAVQV tACC Address to Output Delay /CE = V IL /OE = VIL tELQV tCE Chip Enable to Output Delay /OE = VIL tGLQV tOE Output Enable to Output Delay Max 30 30 35 50 ns tEHQZ tDF Chip Enable to Output High-Z Max 25 25 30 30 ns tGHQZ tDF Max 25 25 30 30 ns tAXQX tQH Output Enable to Output High-Z Output Hold Time From Addresses, /CE or /OE, Whichever Occurs First Min 0 ns TEST SPECIFICATIONS TEST CONDITION 70R, 80 Output load 30 Input rise and fall times Input pulse levels REV.02 (August,2002) UNIT 100 pF 1TTL gate Output load capacitance,CL (Including jig capacitance) URL:www.hbe.co.kr 90, 120 4 5 ns 0.0-3.0 V HANBit Electronics Co., Ltd. HANBit HMF1M32M4V Input timing measurement reference levels 1.5 V Output timing measurement reference levels 1.5 V 3.0V 2.7kΩ IN3064 or Equivalent Device Under Test CL 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Erase/Program Operations PARAMETER SYMBOLS Speed Options DESCRIPTION UNIT JEDEC STANDARD 70R 80 90 120 tAVAV tWC Write Cycle Time Min 70 80 90 120 tAVWL tAS Address Setup Time Min tWLAX tAH Address Hold Time Min 45 45 45 50 ns tDVWH tDS Data Setup Time Min 35 35 45 50 ns tWHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns 0 Read Recovery Time Before tGHWL ns ns 0 tGHWL Min ns Write tELWL tCS /CE Setup Time Min 0 ns tWHEH tCH /CE Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min tWHWL tWPH Write Pulse Width High Min 30 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 9 µs tWHWH2 tWHWH2 Sector Erase Operation (Note1) Typ 0.7 sec Vcc set up time Min 50 µs tVCS 35 35 35 50 ns Notes : 1 . This does not include the preprogramming time 2 . This timing is only for Sector Protect operations URL:www.hbe.co.kr REV.02 (August,2002) 5 HANBit Electronics Co., Ltd. HANBit HMF1M32M4V u Erase/Program Operations Alternate /CE Controlled Writes PARAMETER SYMBOLS Speed Options DESCRIPTION UNIT JEDEC STANDARD -70R -80 -90 120 tAVAV tWC Write Cycle Time Min 70 80 90 120 tAVWL tAS Address Setup Time Min tWLAX tAH Address Hold Time Min 45 45 45 50 ns tDVWH tDS Data Setup Time Min 35 35 45 50 ns tWHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns Read Recovery Time Before Write Min 0 ns 0 ns ns tGHWL tGHWL tELWL tCS /CE Setup Time Min 0 ns tWHEH tCH /CE Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min tWHWL tWPH Write Pulse Width High Min 30 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 9 µs tWHWH2 tWHWH2 Sector Erase Operation (Note1) Typ 0.7 sec 35 35 35 50 Notes : 1. This does not include the preprogramming time 2 . This timing is only for Sector Protect operations URL:www.hbe.co.kr REV.02 (August,2002) 6 HANBit Electronics Co., Ltd. ns HANBit HMF1M32M4V u READ OPERATIONS TIMING u RESET TIMING URL:www.hbe.co.kr REV.02 (August,2002) 7 HANBit Electronics Co., Ltd. HANBit HMF1M32M4V u PROGRAM OPERATIONS TIMING u CHIP/SECTOR ERASE OPERATION TIMINGS URL:www.hbe.co.kr REV.02 (August,2002) 8 HANBit Electronics Co., Ltd. HANBit HMF1M32M4V u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) URL:www.hbe.co.kr REV.02 (August,2002) 9 HANBit Electronics Co., Ltd. HANBit HMF1M32M4V u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL:www.hbe.co.kr REV.02 (August,2002) 10 HANBit Electronics Co., Ltd. HANBit HMF1M32M4V PACKAGE DIMENSIONS (UNIT : mm) 2.54 mm MIN 0.25 mm MAX 1.27±0.08 Gold: 1.04±0.10 mm Solder: 0.914±0.10 mm 1.27 (Solder & Gold Plating) ORDERING INFORMATION Part Number Density Org. Package HMF1M32M4V-70 4MByte 1Mx 32bit 72Pin -SIMM HMF1M32M4V -80 4MByte 1Mx 32bit HMF1M32M4V- -90 4MByte HMF1M32M4V- -120 4MByte URL:www.hbe.co.kr REV.02 (August,2002) Component Vcc SPEED 4EA 3.3V 70ns 72Pin -SIMM 4EA 3.3V 80ns 1Mx 32bit 72Pin -SIMM 4EA 3.3V 90ns 1Mx 32bit 72Pin -SIMM 4EA 3.3V 120ns 11 Number HANBit Electronics Co., Ltd.