April 1998 FDP6030L / FDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed. 52 A, 30 V. RDS(ON) = 0.0135 Ω @ VGS=10 V RDS(ON) = 0.020 Ω @ VGS=4.5 V. Improved replacement for NDP6030L/NDB6030L. Low gate charge (typical 34 nC). Low Crss (typical 175 pF). Fast switching speed. _________________________________________________________________________________ D G S Absolute Maximum Ratings T C = 25°C unless otherwise note Symbol Parameter VDSS Drain-Source Voltage FDP6030L 30 V VGSS Gate-Source Voltage - Continuous ±20 V ID Drain Current - Continuous 52 A - Pulsed PD TJ,TSTG FDB6030L Units 156 Maximum Power Dissipation @ TC = 25°C 75 W Derate above 25°C 0.5 W/°C -65 to 175 °C 2 °C/W 62.5 °C/W Operating and Storage Temperature Range THERMAL CHARACTERISTICS RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient © 1998 Fairchild Semiconductor Corporation FDP6030L Rev.C1 Electrical Characteristics Symbol T C = 25°C unless otherwise noted) Parameter Conditions Min Typ Max Unit 150 mJ 21 A DRAIN-SOURCE AVALANCHE RATINGS (Note 1) W DSS Single Pulse Drain-Source Avalanche Energy IAR Maximum Drain-Source Avalanche Current VDD = 15 V, ID = 21 A OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient VGS = 0 V, ID = 250 µA 30 ID = 250 µA, Referenced to 25 oC V mV/oC 37 IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 10 µA IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA 3 V ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage ∆VGS(th)/∆TJ Gate Threshold Voltage Temp.Coefficient VDS = VGS, ID = 250 µA 1 ID = 250 µA, Referenced to 25 C RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 26 A o 1.6 mV/oC -4 TJ = 125°C VGS = 4.5 V, ID = 21 A 0.0095 0.0135 0.014 0.023 0.015 0.02 Ω ID(on) On-State Drain Current VGS = 10 V, VDS = 10 V 60 A ID(on) On-State Drain Current VGS = 4.5 V, VDS = 10 V 15 A gFS Forward Transconductance VDS = 10 V, ID = 26 A 37 S 1230 pF 640 pF 175 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS VDS = 15 V, VGS = 0 V, f = 1.0 MHz (Note 1) tD(on) Turn - On Delay Time VDD = 15 V, ID = 52 A 7.6 15 nS tr Turn - On Rise Time VGS = 10 V, RGEN = 24 Ω 150 210 nS tD(off) Turn - Off Delay Time 29 46 nS tf Turn - Off Fall Time 17 27 nS Qg Total Gate Charge 34 46 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS= 12 V ID = 26 A, VGS = 10 V 6 nC 8 nC DRAIN-SOURCE DIODE CHARACTERISTICS IS Maximum Continuos Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 26 A (Note 1) TJ = 125°C 52 A 0.91 1.3 V 0.8 1.2 Note 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. FDP6030L Rev.C1 Typical Electrical Characteristics 5.0 7.0 6.0 80 R DS(ON) , NORMALIZED ID , DRAIN-SOURCE CURRENT (A) 5.5 VGS = 10V 4.5 60 4.0 40 3.5 20 3.0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 DRAIN-SOURCE ON-RESISTANCE 3 100 V GS =3.5V 2.5 4.0 2 4.5 5.0 1.5 5.5 10 0 40 60 I D , DRAIN CURRENT (A) 80 ID = 26A R DS(ON) , ON-RESISTANCE (OHM) I D = 26A V GS = 10V 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 0.04 0.03 TA = 125°C 0.02 0.01 0 175 TJ , JUNCTION TEMPERATURE (°C) 25°C 2 4 6 8 10 VGS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 60 VDS = 10V TA = -55°C 50 25°C 125°C 40 30 20 10 1 2 3 4 VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 I S , REVERSE DRAIN CURRENT (A) 60 0 100 0.05 1.8 R DS(ON) ,NORMALIZED 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 1. On-Region Characteristics. DRAIN-SOURCE ON-RESISTANCE 7.0 0.5 5 VDS , DRAIN-SOURCE VOLTAGE (V) I D , DRAIN CURRENT (A) 6.0 1 VGS =0V 10 TA= 125°C 1 25°C 0.1 -55°C 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 6 . Body Diode Forward Voltage Variation with Source Current and Temperature. FDP6030L Rev.C1 Typical Electrical Characteristics (continued) 4000 I D = 26A VDS = 6.0V 12V 24V 8 2000 CAPACITANCE (pF) VGS , GATE-SOURCE VOLTAGE (V) 10 6 4 Ciss 800 Coss 300 2 0 f = 1 MHz VGS = 0V 0 10 20 Qg , GATE CHARGE (nC) 30 100 0.1 40 10 30 Figure 8. Capacitance Characteristics. R ) (ON DS it Lim 10µ s 100 µs 1ms 50 10 ms 100 m DC s 20 10 VGS = 10V SINGLE PULSE RθJC = 2 o C/W TC = 25 °C 5 2 0.5 0.5 SINGLE PULSE R θJC = 2 °C/W TC = 25°C 2500 POWER (W) 100 1 2000 1500 1000 500 1 3 5 10 20 30 0 0.01 50 0.1 1 10 100 1,000 SINGLE PULSE TIME (SEC) V DS , DRAIN-SOURCE VOLTAGE (V)) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE 3 3000 300 200 TRANSIENT THERMAL RESISTANCE 1 VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. I D , DRAIN CURRENT (A) 0.3 Crss Figure 10. Single Pulse Maximum Power Dissipation. 1 0.5 0.3 D = 0.5 R θ JC (t) = r(t) * RθJC R θJC = 2.0 °C/W 0.2 0.2 0.1 0.1 P(pk) 0.05 0.05 0.03 t1 0.02 0.01 0.02 Single Pulse 0.01 0.01 0.05 t2 TJ - TC = P * RθJC (t) Duty Cycle, D = t1 /t2 0.1 0.5 1 5 t 1 ,TIME (ms) 10 50 100 500 1000 Figure 11. Transient Thermal Response Curve. FDP6030L Rev.C1