Fairchild FDB6030 N-channel logic level enhancement mode field effect transistor Datasheet

April 1998
FDP6030L / FDB6030L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
These N-Channel logic level enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance. These devices are particularly suited
for low voltage applications such as DC/DC converters and
high efficiency switching circuits where fast switching, low
in-line power loss, and resistance to transients are needed.
52 A, 30 V. RDS(ON) = 0.0135 Ω @ VGS=10 V
RDS(ON) = 0.020 Ω @ VGS=4.5 V.
Improved replacement for NDP6030L/NDB6030L.
Low gate charge (typical 34 nC).
Low Crss (typical 175 pF).
Fast switching speed.
_________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
T C = 25°C unless otherwise note
Symbol
Parameter
VDSS
Drain-Source Voltage
FDP6030L
30
V
VGSS
Gate-Source Voltage - Continuous
±20
V
ID
Drain Current - Continuous
52
A
- Pulsed
PD
TJ,TSTG
FDB6030L
Units
156
Maximum Power Dissipation @ TC = 25°C
75
W
Derate above 25°C
0.5
W/°C
-65 to 175
°C
2
°C/W
62.5
°C/W
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
© 1998 Fairchild Semiconductor Corporation
FDP6030L Rev.C1
Electrical Characteristics
Symbol
T C = 25°C unless otherwise noted)
Parameter
Conditions
Min
Typ
Max
Unit
150
mJ
21
A
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
W DSS
Single Pulse Drain-Source Avalanche Energy
IAR
Maximum Drain-Source Avalanche Current
VDD = 15 V, ID = 21 A
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient
VGS = 0 V, ID = 250 µA
30
ID = 250 µA, Referenced to 25 oC
V
mV/oC
37
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
10
µA
IGSSF
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
100
nA
IGSSR
Gate - Body Leakage, Reverse
VGS = -20 V, VDS = 0 V
-100
nA
3
V
ON CHARACTERISTICS
(Note 1)
VGS(th)
Gate Threshold Voltage
∆VGS(th)/∆TJ
Gate Threshold Voltage Temp.Coefficient
VDS = VGS, ID = 250 µA
1
ID = 250 µA, Referenced to 25 C
RDS(ON)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 26 A
o
1.6
mV/oC
-4
TJ = 125°C
VGS = 4.5 V, ID = 21 A
0.0095
0.0135
0.014
0.023
0.015
0.02
Ω
ID(on)
On-State Drain Current
VGS = 10 V, VDS = 10 V
60
A
ID(on)
On-State Drain Current
VGS = 4.5 V, VDS = 10 V
15
A
gFS
Forward Transconductance
VDS = 10 V, ID = 26 A
37
S
1230
pF
640
pF
175
pF
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
(Note 1)
tD(on)
Turn - On Delay Time
VDD = 15 V, ID = 52 A
7.6
15
nS
tr
Turn - On Rise Time
VGS = 10 V, RGEN = 24 Ω
150
210
nS
tD(off)
Turn - Off Delay Time
29
46
nS
tf
Turn - Off Fall Time
17
27
nS
Qg
Total Gate Charge
34
46
nC
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS= 12 V
ID = 26 A, VGS = 10 V
6
nC
8
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
IS
Maximum Continuos Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 26 A
(Note 1)
TJ = 125°C
52
A
0.91
1.3
V
0.8
1.2
Note
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
FDP6030L Rev.C1
Typical Electrical Characteristics
5.0
7.0
6.0
80
R DS(ON) , NORMALIZED
ID , DRAIN-SOURCE CURRENT (A)
5.5
VGS = 10V
4.5
60
4.0
40
3.5
20
3.0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
DRAIN-SOURCE ON-RESISTANCE
3
100
V GS =3.5V
2.5
4.0
2
4.5
5.0
1.5
5.5
10
0
40
60
I D , DRAIN CURRENT (A)
80
ID = 26A
R DS(ON) , ON-RESISTANCE (OHM)
I D = 26A
V GS = 10V
1.6
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
150
0.04
0.03
TA = 125°C
0.02
0.01
0
175
TJ , JUNCTION TEMPERATURE (°C)
25°C
2
4
6
8
10
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
60
VDS = 10V
TA = -55°C
50
25°C
125°C
40
30
20
10
1
2
3
4
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
I S , REVERSE DRAIN CURRENT (A)
60
0
100
0.05
1.8
R DS(ON) ,NORMALIZED
20
Figure 2. On-Resistance Variation with
Drain Current and Gate
Voltage.
Figure 1. On-Region Characteristics.
DRAIN-SOURCE ON-RESISTANCE
7.0
0.5
5
VDS , DRAIN-SOURCE VOLTAGE (V)
I D , DRAIN CURRENT (A)
6.0
1
VGS =0V
10
TA= 125°C
1
25°C
0.1
-55°C
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6 . Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDP6030L Rev.C1
Typical Electrical Characteristics (continued)
4000
I D = 26A
VDS = 6.0V
12V
24V
8
2000
CAPACITANCE (pF)
VGS , GATE-SOURCE VOLTAGE (V)
10
6
4
Ciss
800
Coss
300
2
0
f = 1 MHz
VGS = 0V
0
10
20
Qg , GATE CHARGE (nC)
30
100
0.1
40
10
30
Figure 8. Capacitance Characteristics.
R
)
(ON
DS
it
Lim
10µ
s
100
µs
1ms
50
10
ms
100
m
DC s
20
10
VGS = 10V
SINGLE PULSE
RθJC = 2 o C/W
TC = 25 °C
5
2
0.5
0.5
SINGLE PULSE
R θJC = 2 °C/W
TC = 25°C
2500
POWER (W)
100
1
2000
1500
1000
500
1
3
5
10
20
30
0
0.01
50
0.1
1
10
100
1,000
SINGLE PULSE TIME (SEC)
V DS , DRAIN-SOURCE VOLTAGE (V))
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
3
3000
300
200
TRANSIENT THERMAL RESISTANCE
1
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
I D , DRAIN CURRENT (A)
0.3
Crss
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5
0.3
D = 0.5
R θ JC (t) = r(t) * RθJC
R θJC = 2.0 °C/W
0.2
0.2
0.1
0.1
P(pk)
0.05
0.05
0.03
t1
0.02
0.01
0.02
Single Pulse
0.01
0.01
0.05
t2
TJ - TC = P * RθJC (t)
Duty Cycle, D = t1 /t2
0.1
0.5
1
5
t 1 ,TIME (ms)
10
50
100
500
1000
Figure 11. Transient Thermal Response Curve.
FDP6030L Rev.C1
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