BCD AZ358M-E1 Low power dual operational amplifier Datasheet

Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
General Description
Features
The AZ358/358C consists of two independent, high
gain and internally frequency compensated operational
amplifiers, it is specifically designed to operate from a
single power supply. Operation from split power supply is also possible and the low power supply current
drain is independent of the magnitude of the power
supply voltages.
·
·
Internally Frequency Compensated for Unity
Gain
Large Voltage Gain: 100dB (Typical)
Low Input Bias Current: 20nA (Typical)
Low Input Offset Voltage: 2mV (Typical)
Low Supply Current: 0.5mA (Typical)
Wide Power Supply Voltage Range:
Single Supply: 3V to 18V
Dual Supplies: ±1.5V to ±9V
Input Common Mode Voltage Range Includes
Ground
Large Output Voltage Swing: 0V to VCC-1.5V
·
Power Drain Suitable for Battery Operation
·
·
·
·
·
The AZ358/358C series are Compatible with Industry
standard 358. AZ358C has more stringent input offset
voltage than AZ358.
·
The AZ358/358C series are available in standard packages of DIP-8 and SOIC-8.
AZ358/358C
Applications
·
·
·
SOIC-8
Battery Charger
Cordless Telephone
Switching Power Supply
DIP-8
Figure 1. Package Types of AZ358/358C
Aug. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AZ358/358C
Pin Configuration
M Package/P Package
(SOIC-8/DIP-8)
OUTPUT 1
1
8
VCC
INPUT 1-
2
7
OUTPUT 2
INPUT 1+
3
6
INPUT 2-
GND
4
5
INPUT 2+
Figure 2. Pin Configuration of AZ358/358C (Top View)
Functional Block Diagram
VCC
6µA
4µA
100µA
Q5
Q6
Q2
INPUT-
Q3
Cc
Q7
Q4
Q1
Rsc
OUTPUT
INPUT+
Q11
Q10
Q8
Q9
Q13
Q12
50µA
Figure 3. Functional Block Diagram of AZ358/358C (Each Amplifier)
Aug. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AZ358/358C
Ordering Information
AZ358
E1: Lead Free
Blank: Tin Lead
Circuit Type
TR: Tape and Reel
Blank: Tube
Blank: AZ358
C: AZ358C
Package
SOIC-8
DIP-8
Input Offset Voltage
Maximum
Value
Maximum
Value
Package
M: SOIC-8
P: DIP-8
Part Number
Tin Lead
Lead Free
Marking ID
Tin Lead
Lead Free
Packing Type
5mV
AZ358M
AZ358M-E1
AZ358M
AZ358M-E1
Tube
5mV
AZ358MTR
AZ358MTR-E1
AZ358M
AZ358M-E1
Tape & Reel
3mV
AZ358CM
AZ358CM-E1
358CM
358CM-E1
Tube
3mV
AZ358CMTR
AZ358CMTR-E1
358CM
358CM-E1
Tape & Reel
5mV
AZ358P
AZ358P-E1
AZ358P
AZ358P-E1
Tube
3mV
AZ358CP
AZ358CP-E1
AZ358CP
AZ358CP-E1
Tube
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Aug. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AZ358/358C
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
Power Supply Voltage
VCC
20
V
Differential Input Voltage
VID
20
V
Input Voltage
VIC
-0.3 to 20
V
Input Current (VIN<-0.3V) (Note 2)
IIN
50
mA
Output Short Circuit to Ground
(One Amplifier) (Note 3)
VCC ≤ 12V and TA = 25oC
Continuous
DIP-8
830
SOIC-8
550
Power Dissipation (TA=25oC)
PD
Operating Junction Temperature
TJ
150
oC
TSTG
-65 to 150
oC
TLEAD
260
oC
Storage Temperature Range
Lead Temperature (Soldering, 10 Seconds)
mW
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device under these conditions is not
implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability.
Note 2: This input current will only exist when the voltage at any of the input leads is driven negative. It is due to
the collector-base junction of the input PNP transistors becoming forward biased and thereby acting as input diode
clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action on the IC chip. This
transistor action can cause the output voltages of the op amps to go to the VCC voltage level (or to ground for a
large overdrive) for the time duration that an input is driven negative. This is not destructive and normal output
states will re-establish when the input voltage, which was negative, again returns to a value greater than -0.3V (at
25oC)
Note 3: Short circuits from the output to VCC can cause excessive heating and eventual destruction. When considering short circuits to ground, the maximum output current is approximately 40mA independent of the magnitude of VCC. At values of supply voltage in excess of +12V, continuous short circuits can exceed the power dissipation ratings and cause eventual destruction. Destructive dissipation can result from simultaneous shorts on all
amplifiers.
Recommended Operating Conditions
Parameter
Supply Voltage
Ambient Operating Temperature Range
Symbol
Min
Max
Unit
VCC
3
18
V
TA
-40
85
oC
Aug. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AZ358/358C
Electrical Characteristics
VCC=5V, GND=0, TA=25oC unless otherwise specified.
Parameter
Symbol
Test Conditions
Typ
Max
AZ358
Min
2
5
AZ358C
2
3
Unit
Input Offset Voltage
VIO
VO=1.4V, RS=0Ω,
VCC=5V to 15V
Input Bias Current
(Note 4)
IBIAS
IIN+ or IIN-, VCM=0V
20
200
nA
5
50
nA
VCC-1.5
V
Input Offset Current
IIO
IIN+-IIN-, VCM=0V
Input Common Mode
Voltage Range (Note 5)
VIR
VCC=15V
ICC
RL=∞, Over full temperature VCC=15V
range on all OP Amps
VCC=5V
Supply Current
Output Short
Ground
to
mA
CMRR
VCM=0V to (VCC-1.5)V
70
90
dB
PSRR
VCC=5V to 15V
70
90
dB
-120
dB
CS
Circuit
1.2
dB
Power Supply Rejection
Ration
Sink
0.5
100
Common Mode Rejection
Ratio
Output Current
1.5
85
GV
Source
0.7
VCC=15V, RL≥2ΚΩ,
VO=1V to 11V
Large Signal Voltage Gain
Channel Separation
(Note 6)
0
mV
f=1KHz to 20KHz
ISOURCE
VIN+=1V, VIN-=0V, VCC=15V, VO=2V
20
40
mA
ISINK
VIN+=0V, VIN-=1V, VCC=15V, VO=2V
10
18
mA
VIN+=0V, VIN-=1V, VCC=15V, VO=0.2V
12
50
µA
ISC
VCC=15V
VOH
VCC=15V, RL=2KΩ
12
VCC=15V, RL=10KΩ
12.5
Output Voltage Swing
VOL
40
VCC=5V, RL=10KΩ
60
V
13.5
5
mA
20
mV
Note 4: The direction of the input current is out of the IC due to the PNP input stage. This current is essentially
constant, independent of the state of the output so no loading change exists on the input lines.
Note 5: The input common-mode voltage of either input signal voltage should not be allowed to go negatively by
more than 0.3V (at 25oC). The upper end of the common-mode voltage range is VCC-1.5V (at 25oC), but either or
both inputs can go to +18V without damages, independent of the magnitude of the VCC.
Note 6: Due to proximity of external components, insure that coupling is not originating via stray capacitors
between these external parts. This typically can be detected as this type of capacitance increases at higher frequencies.
Aug. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AZ358/358C
Typical Performance Characteristics
8
30
7
25
NEGATIVE
Input Current (nA)
Input Voltage (±VDC)
6
5
4
POSITIVE
3
2
VCC=15V
20
15
10
5
1
0
0
2
4
6
0
-40
8
-20
0
20
Power Supply Voltage (±VDC)
40
60
80
100
120
Temperature (oC)
Figure 4. Input Voltage Range
Figure 5. Input Current
4.0
120
110
VCC
3.0
mA
A
ID
100
2.5
Voltage Gain (dB)
Supply Current Drain (mA)
3.5
2.0
1.5
o
1.0
o
TA:0 C TO 85 C
RL=2KΩ
RL=20KΩ
90
80
70
0.5
0.0
60
0
2
4
6
8
10
12
14
16
18
20
0
Power Supply Voltage (V)
2
4
6
8
10
12
14
16
18
20
Power Supply Voltage (V)
Figure 6. Supply Current
Figure 7. Voltage Gain
Aug. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AZ358/358C
Typical Performance Characteristics (Continued)
110
100
o
Output
Voltage (V)
90
80
70
60
R 10M
50
0.1uF
VCC
40
VO
30
Input
Voltage (V)
Voltage Gain (dB)
VCC =15V
RL = 2KΩ
o
VCC: 10V TO 15VDC TA: -40 C TO 85 C
VCC/2
VIN
20
10
0
1HZ
10HZ
100HZ
1kHZ
10kHZ
100kHZ
1MHZ
Time (µS)
Frequency (Hz)
Figure 8. Open Loop Frequency Response
Figure 9. Voltage Follower Pulse Response
20
VOUT
TA = 25oC
R 100K
VIN
R 1K
Output Swing (VP-P)
Output Voltage (mV)
50pF
VCC = 15V
Input
Output
VIN
+7VDC
R
2K
10
5
0
1K
Time (µS)
+15
VDC
VO
15
10K
100K
1000K
Frequency (Hz)
Figure 10. Voltage Follower Pulse Response
Figure 11. Large Signal Frequency Response
(Small Signal)
Aug. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AZ358/358C
Typical Performance Characteristics (Continued)
10
o
TA = 25 C
7
VCC
Output Voltage (V)
Output Voltage Referenced to VCC (V)
8
6
VCC/2
VO
5
IO
4
3
1
VCC=5V
VCC
VCC=15V
0.1
Independent of VCC
IO
VCC/2
o
TA = 25 C
2
1
1E-3
0.01
0.1
Vo
1
10
0.01
1E-3
100
0.01
0.1
1
10
100
Output Sink Current (mA)
Output Source Current (mA)
Figure 12. Output Characteristics Current Sourcing
Figure 13. Output Characteristics Current Sinking
100
90
80
Output Current (mA)
IO
70
60
50
40
30
20
10
0
-40
-20
0
20
40
60
80
Temperature (oC)
Figure 14. Current Limiting
Aug. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AZ358/358C
Typical Application
R1
Opto
Isolator
R6
1/2 AZ358/C
AC
Line
SMPS
+
Battery
Pack
GND
R7
R5
R4
R3
Current
R2
Sense
-
VCC
1/2 AZ358/C
+
GND
AZ431
R8
Figure 15. Battery Charger
R1 910K
R1 100K
+V1
+
R2 100K
-
+V2
VCC
R2 100K
1/2 AZ358/C
R3 91K
R3 100K
+
VIN(+)
+V4
VO
R6 100K
+V3
RL
R5
1/2 AZ358/C
100K
-
R4 100K
Figure 17. DC Summing Amplifier
Figure 16. Power Amplifier
Aug. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AZ358/358C
Typical Application (Continued)
VCC
R2 1M
R1 100k
C1
0.1µF
-
CO
VO
1/2 AZ358/C
RB
6.2k
+
CIN
R3
1M
AC
+
2V
-
RL
10k
R1
2K
R2
1/2 AZ358/C
R4 100k
R5
100k
I1
+
VCC
C2
10µF
+
2V
-
R3
2K
R4
3K
AV=1+R2/R1
I2
1mA
AV=11 (As shown)
Figure 19. Fixed Current Sources
Figure 18. AC Coupled Non-Inverting Amplifier
R1
1M
C1 0.01µF
0.001µF
R2 100K
R1 16K
+
VO
C2
0.01µF
1/2 AZ358/C
VO
1/2 AZ358/C
-
+
R3 100K
R2 16K
VIN
-
R3
100k
V0
R5 100K
VCC
0
R4
100
K
Figure 20. Pulse Generator
f0
R4
100k
fo=1KHz
Q=1
AV=2
Figure 21. DC Coupled Low-Pass Active Filter
Aug. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AZ358/358C
Mechanical Dimensions
DIP-8
Unit: mm(inch)
0.700(0.028)
7.620(0.300)TYP
1.524(0.060) TYP
6°
5°
6°
3.200(0.126)
3.600(0.142)
3.710(0.146)
4.310(0.170) 4°
4°
0.510(0.020)MIN
3.000(0.118)
3.600(0.142)
0.204(0.008)
0.360(0.014)
8.200(0.323)
9.400(0.370)
0.254(0.010)TYP
2.540(0.100) TYP
0.360(0.014)
0.560(0.022)
0.130(0.005)MIN
6.200(0.244)
6.600(0.260)
R0.750(0.030)
Φ3.000(0.118)
Depth
0.100(0.004)
0.200(0.008)
9.000(0.354)
9.400(0.370)
Aug. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AZ358/358C
Mechanical Dimensions (Continued)
SOIC-8
Unit: mm(inch)
4.800(0.189)
5.000(0.197)
7°
0.320(0.013)
1.350(0.053)
1.750(0.069)
8°
8°
7°
0.675(0.027)
0.725(0.029)
D
5.800(0.228)
1.270(0.050)
6.200(0.244)
TYP
D
20:1
0.300(0.012)
R0.150(0.006)
0.100(0.004)
φ 0.800(0.031)
0.200(0.008)
0°
8°
1.000(0.039)
3.800(0.150)
4.000(0.157)
1°
5°
0.330(0.013)
0.510(0.020)
0.900(0.035)
R0.150(0.006)
0.190(0.007)
0.250(0.010)
Aug. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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