MMBV3700LT1, MPN3700 High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general−purpose switching circuits. They are supplied in a cost−effective plastic package for economical, high−volume consumer and industrial requirements. They are also available in surface mount. http://onsemi.com SOT−23 Features 1 Anode • Long Reverse Recovery Time trr = 300 ns (Typ) • Rugged PIN Structure Coupled with Wirebond Construction for 3 Cathode Optimum Reliability • Low Series Resistance @ 100 MHz − MARKING DIAGRAM RS = 0.7 W (Typ) @ IF = 10 mAdc • Reverse Breakdown Voltage = 200 V (Min) • Pb−Free Packages are Available 3 SOT−23 (TO−236AB) CASE 318 −08 STYLE 8 1 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 20 Vdc Forward Power Dissipation @ TA = 25°C MMBV3700LT1 Derate above 25°C PD 200 2.8 mW mW/°C Forward Power Dissipation @ TA = 25°C Derate above 25°C PD MPN3700 280 2.8 mW mW/°C Junction Temperature TJ +125 °C Storage Temperature Range Tstg −55 to +150 °C 4R M G G 1 2 4R = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. TO−92 1 Anode Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 2 Cathode MARKING DIAGRAM TO−92 (TO−226AC) CASE 182−06 STYLE 1 1 MPN 3700 AYWW G G 2 MPN = Device Code 3700 = Specific Device A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 3 1 Publication Order Number: MMBV3700LT1/D MMBV3700LT1, MPN3700 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)R 200 − − Vdc Diode Capacitance (VR = 20 Vdc, f = 1.0 MHz) CT − − 1.0 pF Series Resistance (Figure 5) (IF = 10 mAdc) RS − 0.7 1.0 W Reverse Leakage Current (VR = 150 Vdc) IR − − 0.1 mAdc Reverse Recovery Time (IF = IR = 10 mAdc) trr − 300 − ns Reverse Breakdown Voltage (IR = 10 mAdc) TYPICAL CHARACTERISTICS 800 2.8 TA = 25°C 2.4 700 I F , FORWARD CURRENT (mA) RS , SERIES RESISTANCE (OHMS) 3.2 2.0 1.6 1.2 0.8 600 500 400 300 200 100 0.4 0 2.0 4.0 6.0 8.0 10 12 14 0 16 0.7 0.8 0.9 1.0 IF, FORWARD CURRENT (mA) VF, FORWARD VOLTAGE (VOLTS) Figure 1. Series Resistance Figure 2. Forward Voltage 10 8.0 6.0 100 40 4.0 TA = 25°C 2.0 1.0 0.8 0.6 0.4 I R , REVERSE CURRENT (μ A) C T , DIODE CAPACITANCE (pF) 0 TA = 25°C 0.2 10 4.0 VR = 15 Vdc 1.0 0.4 0.1 0.04 0.01 0.004 0.1 0 −10 −20 −30 −40 0.001 −60 −50 VR, REVERSE VOLTAGE (VOLTS) −20 0 +20 +60 +100 +140 TA, AMBIENT TEMPERATURE (°C) Figure 3. Diode Capacitance Figure 4. Leakage Current ORDERING INFORMATION Device MMBV3700LT1 MMBV3700LT1G MPN3700 MPN3700G Package Shipping † SOT−23 3000 / Tape & Reel SOT−23 (Pb−Free) 3000 / Tape & Reel TO−92 1000 Units / Bulk TO−92 (Pb−Free) 1000 Units / Bulk †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MMBV3700LT1, MPN3700 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 b DIM A A1 b c D E e L L1 HE 0.25 e q A L A1 L1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 3 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 MMBV3700LT1, MPN3700 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 182−06 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND ZONE R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R SEATING PLANE ÉÉ ÉÉ D L P J K SECTION X−X X X D G H V 1 2 C INCHES DIM MIN MAX A 0.175 0.205 B 0.170 0.210 C 0.125 0.165 D 0.016 0.021 G 0.050 BSC H 0.100 BSC J 0.014 0.016 K 0.500 −−− L 0.250 −−− N 0.080 0.105 P −−− 0.050 R 0.115 −−− V 0.135 −−− STYLE 1: PIN 1. ANODE 2. CATHODE MILLIMETERS MIN MAX 4.45 5.21 4.32 5.33 3.18 4.19 0.407 0.533 1.27 BSC 2.54 BSC 0.36 0.41 12.70 −−− 6.35 −−− 2.03 2.66 −−− 1.27 2.93 −−− 3.43 −−− N N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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