MCH3360 Ordering number : EN8109A SANYO Semiconductors DATA SHEET MCH3360 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 Gate-to-Source Voltage VGSS ±20 V ID --1.8 A Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation IDP PD PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) V --7.2 A 0.9 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGS=±16V, VDS=0V --30 IDSS IGSS VGS(off) yfs VDS=--10V, ID=--1mA VDS=--10V, ID=--1A --1.2 RDS(on)1 RDS(on)2 ID=--1A, VGS=--10V ID=--0.5A, VGS=--4V Input Capacitance Ciss pF Coss 43 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz 226 Output Capacitance 36 pF Turn-ON Delay Time td(on) tr See specified Test Circuit. 8.5 ns See specified Test Circuit. 10.5 ns td(off) tf See specified Test Circuit. 29 ns See specified Test Circuit. 22 ns Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Rise Time Turn-OFF Delay Time Fall Time Marking : WM V(BR)DSS 1.1 V --1 µA ±10 µA --2.6 1.8 V S 180 235 mΩ 320 450 mΩ Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 91306PE MS IM TC-00000176 / N2504 TS IM TB-00000651 No.8109-1/4 MCH3360 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--1.8A 5.5 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--1.8A 1 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--1.8A 0.97 Diode Forward Voltage VSD IS=--1.8A, VGS=0V nC --0.91 Package Dimensions --1.5 V Switching Time Test Circuit unit : mm (typ) 7019A-003 VDD= --15V VIN 0V --10V 0.15 0.25 2.0 ID= --1A RL=15Ω VIN 0 to 0.02 1.6 2.1 3 D VOUT PW=10µs D.C.≤1% 0.25 1 2 G 0.65 0.3 0.85 MCH3360 P.G 50Ω S 0.07 1 : Gate 2 : Source 3 : Drain SANYO : MCPH3 ID -- VDS --2.5 --3.0V --0.6 --1.5 --1.0 5°C --0.8 C --0.4 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 500 400 --1.0A ID= --0.5A 200 100 0 0 --2 --4 --6 --8 --10 --12 --14 --16 Gate-to-Source Voltage, VGS -- V --18 --20 IT07303 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 IT07301 RDS(on) -- Ta 600 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 600 --1.0 --0.5 Gate-to-Source Voltage, VGS -- V Ta=25°C 700 300 0 IT07299 RDS(on) -- VGS 800 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 25° --0.5 VGS= --2.5V --0.2 Ta= 7 --1.0 --2.0 °C --1.2 --25 0V .0V VDS= --10V Drain Current, ID -- A Drain Current, ID -- A --1.4 ID -- VGS --3.0 --4 --10 --1.6 --6 . .0V --1.8 500 400 0.5A, I D= -- --4V V GS= 300 0V , V S= --1 I D= --1.0A G 200 100 0 --60 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT07305 No.8109-2/4 MCH3360 yfs -- ID 5 VGS=0V 3 2 3 °C 25 1.0 = Ta 7 5 --2 °C C 75° 5 3 --1.0 7 5 3 Ta= 75 ° C 25° C --25° C 2 2 --0.1 7 5 3 2 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 5 --0.01 --0.4 7 --0.5 --0.6 2 --0.8 --0.9 --1.0 --1.1 --1.2 IT07309 Ciss, Coss, Crss -- VDS 5 VDD= --15V VGS= --10V 3 --0.7 Diode Forward Voltage, VSD -- V IT07307 SW Time -- ID 5 f=1MHz 3 Ciss 2 100 7 5 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns IS -- VSD 5 VDS= --10V Source Current, IS -- A Forward Transfer Admittance, yfs -- S 7 td(off) tf 3 2 td(on) 10 7 5 100 7 5 3 tr 3 Coss Crss 2 2 1.0 --0.01 10 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --10 7 5 --7 --6 --5 --4 3 2 --1 3 2 1 2 3 4 5 6 Total Gate Charge, Qg -- nC IT07315 PD -- Ta 1.0 --25 --30 IT07313 PW≤10µs 10 0µ s 1m 10 s m s ID= --1.8A D C op 10 er 3 2 --2 0 --20 IDP= --7.2A --1.0 7 5 --0.1 7 5 --3 --15 ASO 2 --8 0 --10 Drain-to-Source Voltage, VDS -- V VDS= --10V ID= --1.8A --9 --5 IT07311 VGS -- Qg --10 Allowable Power Dissipation, PD -- W 0 5 at 0m io Operation in this area is limited by RDS(on). n s (T a= 25 °C ) Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT08246 0.9 M 0.8 ou nt ed on ac er 0.6 am ic bo ar 0.4 d (9 00 m m2 ✕ 0. 8m 0.2 m ) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT08247 No.8109-3/4 MCH3360 Note on usage : Since the MCH3360 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2006. Specifications and information herein are subject to change without notice. PS No.8109-4/4