INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP7530，IIRFP7530 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2mΩ ·Enhancement mode: Vth =2.1 to 3.7V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Synchronous Rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 195 A IDM Drain Current-Single Pulsed 760 A PD Total Dissipation @TC=25℃ 341 W Tj Max. Operating Junction Temperature 175 ℃ -55~175 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(j-c) Rth(j-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 0.44 ℃/W 40 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP7530，IIRFP7530 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA 60 VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA 2.1 RDS(on) Drain-Source On-Resistance VGS=10V; ID=100A IGSS Gate-Source Leakage Current VGS= ±20V IDSS Drain-Source Leakage Current VSD Diode forward voltage isc website：www.iscsemi.cn CONDITIONS MIN TYP MAX UNIT V 3.7 V 2.0 mΩ ±0.1 μA VDS=60V; VGS= 0V 1.0 μA IS=100A, VGS = 0V 1.2 V 2 isc & iscsemi is registered trademark