ON NGTB40N60L2WG Igbt Datasheet

NGTB40N60L2WG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss.
Features
•
•
•
•
•
•
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Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for Low VCEsat
5 ms Short−Circuit Capability
This is a Pb−Free Device
40 A, 600 V
VCEsat = 1.65 V
EOFF = 0.28 mJ
C
Typical Applications
• Motor Drive Inverters
• Industrial Switching
• Welding
G
ABSOLUTE MAXIMUM RATINGS
Rating
E
Symbol
Value
Unit
Collector−emitter voltage
VCES
600
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
Diode Forward Current
@ TC = 25°C
@ TC = 100°C
IF
A
80
40
A
C
80
40
Diode Pulsed Current
TPULSE Limited by TJ Max
IFM
160
A
Pulsed collector current, Tpulse
limited by TJmax
ICM
160
A
Short−circuit withstand time
VGE = 15 V, VCE = 400 V,
TJ ≤ +150°C
tSC
5
ms
Gate−emitter voltage
VGE
$20
V
V
$30
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
Operating junction temperature
range
TJ
−55 to +175
°C
Storage temperature range
Tstg
−55 to +175
°C
Lead temperature for soldering, 1/8”
from case for 5 seconds
TSLD
260
°C
40N60L2
AYWWG
W
417
208
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
January, 2016 − Rev. 2
E
MARKING DIAGRAM
Transient gate−emitter voltage
(TPULSE = 5 ms, D < 0.10)
© Semiconductor Components Industries, LLC, 2016
TO−247
CASE 340AL
G
1
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGTB40N60L2WG
Package
Shipping
TO−247
(Pb−Free)
30 Units / Rail
Publication Order Number:
NGTB40N60L2W/D
NGTB40N60L2WG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.36
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
1.00
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
600
−
−
V
VGE = 15 V, IC = 40 A
VGE = 15 V, IC = 40 A, TJ = 175°C
VCEsat
−
−
1.65
1.90
1.90
−
V
VGE = VCE, IC = 350 mA
VGE(th)
4.5
5.8
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 175°C
ICES
−
−
−
5.0
0.5
−
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V , VCE = 0 V
IGES
−
−
200
nA
Cies
−
5286
−
pF
VCE = 20 V, VGE = 0 V, f = 1 MHz
Coes
−
213
−
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
Cres
−
147
−
Gate charge total
Qg
−
228
−
Gate to emitter charge
Qge
−
50
−
Qgc
−
115
−
td(on)
−
98
−
tr
−
42
−
td(off)
−
213
−
tf
−
60
−
Eon
−
1.17
−
Turn−off switching loss
Eoff
−
0.28
−
Total switching loss
Ets
−
1.45
−
Turn−on delay time
td(on)
−
98
−
tr
−
44
−
td(off)
−
220
−
VCE = 480 V, IC = 40 A, VGE = 15 V
Gate to collector charge
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 25°C
VCC = 400 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15 V
Rise time
Turn−off delay time
Fall time
TJ = 150°C
VCC = 400 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15 V
tf
−
88
−
Eon
−
1.45
−
Turn−off switching loss
Eoff
−
0.68
−
Total switching loss
Ets
−
2.13
−
VF
−
−
2.40
2.58
3.00
−
Turn−on switching loss
ns
mJ
ns
mJ
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGE = 0 V, IF = 40 A
VGE = 0 V, IF = 40 A, TJ = 175°C
TJ = 25°C
IF = 40 A, VR = 200 V
diF/dt = 200 A/ms
TJ = 175°C
IF = 40 A, VR = 200 V
diF/dt = 200 A/ms
V
trr
−
73
−
ns
Qrr
−
282
−
nC
Irrm
−
6.7
−
A
trr
−
160
−
ns
Qrr
−
912
−
nC
Irrm
−
8.6
−
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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NGTB40N60L2WG
TYPICAL CHARACTERISTICS
VGE = 20 to 15 V
120
13 V
100
80
11 V
60
40
10 V
7V
20
1
2
3
4
6
5
8
13 V
100
80
60
11 V
10 V
40
9V
7V
20
8V
0
1
2
3
4
6
5
7
Figure 1. Output Characteristics
Figure 2. Output Characteristics
13 V
80
11 V
60
40
10 V
20
7V−8V
9V
1
2
3
4
5
6
7
8
160
TJ = −55°C
100
0
VGE = 20 to 17 V
120
VCE, COLLECTOR−EMITTER VOLTAGE (V)
120
0
15 V
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE = 20 to
15 V
140
7
TJ = 150°C
140
0
IC, COLLECTOR CURRENT (A)
0
9V
8V
160
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
140
0
VCE, COLLECTOR−EMITTER VOLTAGE (V)
160
TJ = 25°C
140
TJ = 25°C
120
100
80
TJ = 150°C
60
40
20
0
8
0
4
2
8
6
10
14
12
16
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
3.00
10,000
Cies
2.75
IC = 60 A
2.50
2.25
IC = 40 A
2.00
1.75
IC = 20 A
1.50
1.25
C, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (A)
160
1000
Coes
100
Cres
1.00
0.75
−75 −50 −25
TJ = 25°C
10
0
25
50
75
0
100 125 150 175 200
10
20
30
40
50
60
70
80
90 100
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
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NGTB40N60L2WG
TYPICAL CHARACTERISTICS
20
VGE, GATE−EMITTER VOLTAGE (V)
110
IF, FORWARD CURRENT (A)
100
90
80
70
TJ = 25°C
60
50
TJ = 150°C
40
30
20
10
0
0
0.5
1.0
1.5
2.0
2.5
3.5
3.0
16
14
12
10
8
6
4
VCE = 480 V
VGE = 15 V
IC = 40 A
2
0
4.0
0
50
150
100
QG, GATE CHARGE (nC)
Figure 7. Diode Forward Characteristics
Figure 8. Typical Gate Charge
1.25
SWITCHING TIME (ns)
1000
VCE = 400 V
VGE = 15 V
IC = 40 A
Rg = 10 W
1.5
200
VF, FORWARD VOLTAGE (V)
1.75
SWITCHING LOSS (mJ)
18
Eon
1
0.75
Eoff
0.5
250
VCE = 400 V
VGE = 15 V
IC = 40 A
Rg = 10 W
td(off)
td(on)
100
tf
tr
0.25
0
0
20
40
60
80
100
120
140
10
160
0
20
40
80
100
120
140
160
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
4.5
1000
3.5
SWITCHING TIME (ns)
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
4
SWITCHING LOSS (mJ)
60
3
Eon
2.5
2
1.5
Eoff
1
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
td(off)
tf
td(on)
100
tr
0.5
0
5
15
25
35
45
55
65
75
10
85
5
15
25
35
45
55
65
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. IC
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4
75
85
NGTB40N60L2WG
10000
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
VCE = 400 V
VGE = 15 V
TJ = 150°C
IC = 35 A
Eon
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
TYPICAL CHARACTERISTICS
Eoff
td(on)
100
tf
10
5
15
25
35
45
55
65
75
5
45
55
65
75
Figure 14. Switching Time vs. Rg
1000
1
Eoff
0.5
200 250
IC = 40 A
VGE = 15 V
TJ = 150°C
Rg = 10 W
Eon
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
35
Figure 13. Switching Loss vs. Rg
1.5
150
25
Rg, GATE RESISTOR (W)
IC = 40 A
VGE = 15 V
TJ = 150°C
Rg = 10 W
2
15
Rg, GATE RESISTOR (W)
300
350
500
400 450
550
85
td(off)
td(on)
100
tf
tr
10
175
600
225
275
325
375
425
475
525
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
575
1000
1000
IC, COLLECTOR CURRENT (A)
1 ms
IC, COLLECTOR CURRENT (A)
VCE = 400 V
VGE = 15 V
TJ = 150°C
IC = 40 A
tr
2.5
0
td(off)
1000
100 ms
100
50 ms
dc operation
10
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
1
0.1
1
10
100
1000
VGE = 15 V, TC = 125°C
100
10
1
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
Figure 18. Reverse Bias Safe Operating Area
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NGTB40N60L2WG
Qrr, REVERSE RECOVERY CHARGE (mC)
TYPICAL CHARACTERISTICS
140
TJ = 175°C, IF = 40 A
120
100
80
TJ = 25°C, IF = 40 A
60
40
Irm, REVERSE RECOVERY CURRENT (A)
100
300
500
700
900
1100
2.0
1.5
TJ = 175°C, IF = 40 A
1.0
TJ = 25°C, IF = 40 A
0.5
0
100
300
500
700
900
diF/dt, DIODE CURRENT SLOPE (A/ms)
diF/dt, DIODE CURRENT SLOPE (A/ms)
Figure 19. trr vs. diF/dt
(VR = 400 V)
Figure 20. Qrr vs. diF/dt
(VR = 400 V)
30
1100
3.5
VF, FORWARD VOLTAGE (V)
trr, REVERSE RECOVERY TIME (ns)
160
TJ = 175°C, IF = 40 A
20
TJ = 25°C, IF = 40 A
10
0
100
300
500
700
900
1100
IF = 60 A
3.0
IF = 40 A
2.5
IF = 30 A
2.0
1.5
1.0
−75 −50 −25
0
25
50
75 100 125 150 175 200
diF/dt, DIODE CURRENT SLOPE (A/ms)
TJ, JUNCTION TEMPERATURE (°C)
Figure 21. Irm vs. diF/dt
(VR = 400 V)
Figure 22. VF vs. TJ
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NGTB40N60L2WG
TYPICAL CHARACTERISTICS
SQUARE−WAVE PEAK R(t) (°C/W)
1
RqJA = 0.36
50% Duty Cycle
0.1
20%
10%
5%
0.01
0.01
R1
Junction
2%
R2
C1
Single Pulse
Rn
Case
Ri (°C/W)
Ci (J/°C)
0.0424
0.0269
0.0344
0.0858
0.1370
0.0024
0.0117
0.0291
0.0368
0.0730
0.0287
1.1036
Cn
C2
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.0001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
ON−PULSE WIDTH (sec)
Figure 23. IGBT Die Self−heating Square−wave Duty Cycle Transient Thermal Response
SQUARE−WAVE PEAK R(t) (°C/W)
1
RqJA = 1.00
50% Duty Cycle
20%
Junction
10%
R1
R2
Rn
C1
C2
Cn
Case
0.1
5%
2%
Single Pulse
0.01
0.000001
0.00001
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.0001
0.001
0.01
Ri (°C/W)
Ci (J/°C)
0.015573
0.020609
0.022302
0.051471
0.093296
0.196754
0.133748
0.176718
0.249274
0.037835
0.000064
0.000485
0.001418
0.001943
0.003390
0.005082
0.023644
0.056587
0.126860
2.643021
0.1
ON−PULSE WIDTH (sec)
Figure 24. Diode Die Self−heating Square−wave Duty Cycle Transient Thermal Response
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1
NGTB40N60L2WG
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE A
B
A
NOTE 4
E
SEATING
PLANE
0.635
M
P
A
Q
E2
D
S
NOTE 3
1
2
4
DIM
A
A1
b
b2
b4
c
D
E
E2
e
L
L1
P
Q
S
3
L1
NOTE 5
L
2X
b2
c
b4
3X
e
A1
b
0.25
NOTE 7
M
B A
M
NOTE 6
E2/2
NOTE 4
B A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
M
MILLIMETERS
MIN
MAX
4.70
5.30
2.20
2.60
1.00
1.40
1.65
2.35
2.60
3.40
0.40
0.80
20.30
21.40
15.50
16.25
4.32
5.49
5.45 BSC
19.80
20.80
3.50
4.50
3.55
3.65
5.40
6.20
6.15 BSC
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