NGTB40N60L2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features • • • • • • www.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for Low VCEsat 5 ms Short−Circuit Capability This is a Pb−Free Device 40 A, 600 V VCEsat = 1.65 V EOFF = 0.28 mJ C Typical Applications • Motor Drive Inverters • Industrial Switching • Welding G ABSOLUTE MAXIMUM RATINGS Rating E Symbol Value Unit Collector−emitter voltage VCES 600 V Collector current @ TC = 25°C @ TC = 100°C IC Diode Forward Current @ TC = 25°C @ TC = 100°C IF A 80 40 A C 80 40 Diode Pulsed Current TPULSE Limited by TJ Max IFM 160 A Pulsed collector current, Tpulse limited by TJmax ICM 160 A Short−circuit withstand time VGE = 15 V, VCE = 400 V, TJ ≤ +150°C tSC 5 ms Gate−emitter voltage VGE $20 V V $30 Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −55 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C 40N60L2 AYWWG W 417 208 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. January, 2016 − Rev. 2 E MARKING DIAGRAM Transient gate−emitter voltage (TPULSE = 5 ms, D < 0.10) © Semiconductor Components Industries, LLC, 2016 TO−247 CASE 340AL G 1 A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTB40N60L2WG Package Shipping TO−247 (Pb−Free) 30 Units / Rail Publication Order Number: NGTB40N60L2W/D NGTB40N60L2WG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.36 °C/W Thermal resistance junction−to−case, for Diode RqJC 1.00 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 600 − − V VGE = 15 V, IC = 40 A VGE = 15 V, IC = 40 A, TJ = 175°C VCEsat − − 1.65 1.90 1.90 − V VGE = VCE, IC = 350 mA VGE(th) 4.5 5.8 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 175°C ICES − − − 5.0 0.5 − mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA Cies − 5286 − pF VCE = 20 V, VGE = 0 V, f = 1 MHz Coes − 213 − STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance Reverse transfer capacitance Cres − 147 − Gate charge total Qg − 228 − Gate to emitter charge Qge − 50 − Qgc − 115 − td(on) − 98 − tr − 42 − td(off) − 213 − tf − 60 − Eon − 1.17 − Turn−off switching loss Eoff − 0.28 − Total switching loss Ets − 1.45 − Turn−on delay time td(on) − 98 − tr − 44 − td(off) − 220 − VCE = 480 V, IC = 40 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 25°C VCC = 400 V, IC = 40 A Rg = 10 W VGE = 0 V/ 15 V Rise time Turn−off delay time Fall time TJ = 150°C VCC = 400 V, IC = 40 A Rg = 10 W VGE = 0 V/ 15 V tf − 88 − Eon − 1.45 − Turn−off switching loss Eoff − 0.68 − Total switching loss Ets − 2.13 − VF − − 2.40 2.58 3.00 − Turn−on switching loss ns mJ ns mJ DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current VGE = 0 V, IF = 40 A VGE = 0 V, IF = 40 A, TJ = 175°C TJ = 25°C IF = 40 A, VR = 200 V diF/dt = 200 A/ms TJ = 175°C IF = 40 A, VR = 200 V diF/dt = 200 A/ms V trr − 73 − ns Qrr − 282 − nC Irrm − 6.7 − A trr − 160 − ns Qrr − 912 − nC Irrm − 8.6 − A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NGTB40N60L2WG TYPICAL CHARACTERISTICS VGE = 20 to 15 V 120 13 V 100 80 11 V 60 40 10 V 7V 20 1 2 3 4 6 5 8 13 V 100 80 60 11 V 10 V 40 9V 7V 20 8V 0 1 2 3 4 6 5 7 Figure 1. Output Characteristics Figure 2. Output Characteristics 13 V 80 11 V 60 40 10 V 20 7V−8V 9V 1 2 3 4 5 6 7 8 160 TJ = −55°C 100 0 VGE = 20 to 17 V 120 VCE, COLLECTOR−EMITTER VOLTAGE (V) 120 0 15 V VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE = 20 to 15 V 140 7 TJ = 150°C 140 0 IC, COLLECTOR CURRENT (A) 0 9V 8V 160 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 140 0 VCE, COLLECTOR−EMITTER VOLTAGE (V) 160 TJ = 25°C 140 TJ = 25°C 120 100 80 TJ = 150°C 60 40 20 0 8 0 4 2 8 6 10 14 12 16 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 3.00 10,000 Cies 2.75 IC = 60 A 2.50 2.25 IC = 40 A 2.00 1.75 IC = 20 A 1.50 1.25 C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) 160 1000 Coes 100 Cres 1.00 0.75 −75 −50 −25 TJ = 25°C 10 0 25 50 75 0 100 125 150 175 200 10 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance www.onsemi.com 3 NGTB40N60L2WG TYPICAL CHARACTERISTICS 20 VGE, GATE−EMITTER VOLTAGE (V) 110 IF, FORWARD CURRENT (A) 100 90 80 70 TJ = 25°C 60 50 TJ = 150°C 40 30 20 10 0 0 0.5 1.0 1.5 2.0 2.5 3.5 3.0 16 14 12 10 8 6 4 VCE = 480 V VGE = 15 V IC = 40 A 2 0 4.0 0 50 150 100 QG, GATE CHARGE (nC) Figure 7. Diode Forward Characteristics Figure 8. Typical Gate Charge 1.25 SWITCHING TIME (ns) 1000 VCE = 400 V VGE = 15 V IC = 40 A Rg = 10 W 1.5 200 VF, FORWARD VOLTAGE (V) 1.75 SWITCHING LOSS (mJ) 18 Eon 1 0.75 Eoff 0.5 250 VCE = 400 V VGE = 15 V IC = 40 A Rg = 10 W td(off) td(on) 100 tf tr 0.25 0 0 20 40 60 80 100 120 140 10 160 0 20 40 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature 4.5 1000 3.5 SWITCHING TIME (ns) VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 4 SWITCHING LOSS (mJ) 60 3 Eon 2.5 2 1.5 Eoff 1 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W td(off) tf td(on) 100 tr 0.5 0 5 15 25 35 45 55 65 75 10 85 5 15 25 35 45 55 65 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC www.onsemi.com 4 75 85 NGTB40N60L2WG 10000 6 5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 VCE = 400 V VGE = 15 V TJ = 150°C IC = 35 A Eon SWITCHING TIME (ns) SWITCHING LOSS (mJ) TYPICAL CHARACTERISTICS Eoff td(on) 100 tf 10 5 15 25 35 45 55 65 75 5 45 55 65 75 Figure 14. Switching Time vs. Rg 1000 1 Eoff 0.5 200 250 IC = 40 A VGE = 15 V TJ = 150°C Rg = 10 W Eon SWITCHING TIME (ns) SWITCHING LOSS (mJ) 35 Figure 13. Switching Loss vs. Rg 1.5 150 25 Rg, GATE RESISTOR (W) IC = 40 A VGE = 15 V TJ = 150°C Rg = 10 W 2 15 Rg, GATE RESISTOR (W) 300 350 500 400 450 550 85 td(off) td(on) 100 tf tr 10 175 600 225 275 325 375 425 475 525 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE 575 1000 1000 IC, COLLECTOR CURRENT (A) 1 ms IC, COLLECTOR CURRENT (A) VCE = 400 V VGE = 15 V TJ = 150°C IC = 40 A tr 2.5 0 td(off) 1000 100 ms 100 50 ms dc operation 10 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 1 0.1 1 10 100 1000 VGE = 15 V, TC = 125°C 100 10 1 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area www.onsemi.com 5 NGTB40N60L2WG Qrr, REVERSE RECOVERY CHARGE (mC) TYPICAL CHARACTERISTICS 140 TJ = 175°C, IF = 40 A 120 100 80 TJ = 25°C, IF = 40 A 60 40 Irm, REVERSE RECOVERY CURRENT (A) 100 300 500 700 900 1100 2.0 1.5 TJ = 175°C, IF = 40 A 1.0 TJ = 25°C, IF = 40 A 0.5 0 100 300 500 700 900 diF/dt, DIODE CURRENT SLOPE (A/ms) diF/dt, DIODE CURRENT SLOPE (A/ms) Figure 19. trr vs. diF/dt (VR = 400 V) Figure 20. Qrr vs. diF/dt (VR = 400 V) 30 1100 3.5 VF, FORWARD VOLTAGE (V) trr, REVERSE RECOVERY TIME (ns) 160 TJ = 175°C, IF = 40 A 20 TJ = 25°C, IF = 40 A 10 0 100 300 500 700 900 1100 IF = 60 A 3.0 IF = 40 A 2.5 IF = 30 A 2.0 1.5 1.0 −75 −50 −25 0 25 50 75 100 125 150 175 200 diF/dt, DIODE CURRENT SLOPE (A/ms) TJ, JUNCTION TEMPERATURE (°C) Figure 21. Irm vs. diF/dt (VR = 400 V) Figure 22. VF vs. TJ www.onsemi.com 6 NGTB40N60L2WG TYPICAL CHARACTERISTICS SQUARE−WAVE PEAK R(t) (°C/W) 1 RqJA = 0.36 50% Duty Cycle 0.1 20% 10% 5% 0.01 0.01 R1 Junction 2% R2 C1 Single Pulse Rn Case Ri (°C/W) Ci (J/°C) 0.0424 0.0269 0.0344 0.0858 0.1370 0.0024 0.0117 0.0291 0.0368 0.0730 0.0287 1.1036 Cn C2 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.0001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 ON−PULSE WIDTH (sec) Figure 23. IGBT Die Self−heating Square−wave Duty Cycle Transient Thermal Response SQUARE−WAVE PEAK R(t) (°C/W) 1 RqJA = 1.00 50% Duty Cycle 20% Junction 10% R1 R2 Rn C1 C2 Cn Case 0.1 5% 2% Single Pulse 0.01 0.000001 0.00001 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.0001 0.001 0.01 Ri (°C/W) Ci (J/°C) 0.015573 0.020609 0.022302 0.051471 0.093296 0.196754 0.133748 0.176718 0.249274 0.037835 0.000064 0.000485 0.001418 0.001943 0.003390 0.005082 0.023644 0.056587 0.126860 2.643021 0.1 ON−PULSE WIDTH (sec) Figure 24. Diode Die Self−heating Square−wave Duty Cycle Transient Thermal Response www.onsemi.com 7 1 NGTB40N60L2WG PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE A B A NOTE 4 E SEATING PLANE 0.635 M P A Q E2 D S NOTE 3 1 2 4 DIM A A1 b b2 b4 c D E E2 e L L1 P Q S 3 L1 NOTE 5 L 2X b2 c b4 3X e A1 b 0.25 NOTE 7 M B A M NOTE 6 E2/2 NOTE 4 B A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. M MILLIMETERS MIN MAX 4.70 5.30 2.20 2.60 1.00 1.40 1.65 2.35 2.60 3.40 0.40 0.80 20.30 21.40 15.50 16.25 4.32 5.49 5.45 BSC 19.80 20.80 3.50 4.50 3.55 3.65 5.40 6.20 6.15 BSC ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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