HFA06PB120PbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 6 A FEATURES • • • • • • • Base common cathode Anode 1 Available RoHS* COMPLIANT BENEFITS • • • • • 2 3 1 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating temperature Lead (Pb)-free Designed and qualified for industrial level Anode 2 Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION HFA06PB120 is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 V and 6 A continuous current, the HFA06PB120 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA06PB120 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. TO-247AC modified PRODUCT SUMMARY VR 1200 V VF at 6 A at 25 °C 3.0 V IF(AV) 6A trr (typical) 26 ns TJ (maximum) 150 °C Qrr (typical) 116 nC dI(rec)M/dt (typical) at 125 °C 100 A/µs IRRM (typical) 4.4 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage VR Maximum continuous forward current IF Single pulse forward current IFSM Maximum repetitive forward current IFRM Maximum power dissipation PD Operating junction and storage temperature range TEST CONDITIONS TC = 100 °C VALUES UNITS 1200 V 6 80 A 24 TC = 25 °C 62.5 TC = 100 °C 25 TJ, TStg - 55 to + 150 W °C * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94037 Revision: 25-Jul-08 For technical questions, contact: [email protected] www.vishay.com 1 HFA06PB120PbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 6 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Cathode to anode breakdown voltage VBR Maximum forward voltage VFM TEST CONDITIONS IR = 100 µA MIN. TYP. MAX. 1200 - - IF = 6.0 A - 2.7 3.0 IF = 12 A - 3.5 3.9 IF = 6.0 A, TJ = 125 °C - 2.4 2.8 VR = VR rated - 0.26 5.0 TJ = 125 °C, VR = 0.8 x VR rated - 110 500 UNITS V Maximum reverse leakage current IRM Junction capacitance CT VR = 200 V - 9.0 14 pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH UNITS µA DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified) PARAMETER Reverse recovery time Peak recovery current Reverse recovery charge Peak rate of recovery current during tb SYMBOL TEST CONDITIONS MIN. TYP. MAX. - 26 - trr IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V trr1 TJ = 25 °C - 53 80 trr2 TJ = 125 °C - 87 130 - 4.4 8.0 - 5.0 9.0 ns IRRM1 TJ = 25 °C IRRM2 TJ = 125 °C Qrr1 TJ = 25 °C - 116 320 Qrr2 TJ = 125 °C - 233 585 dI(rec)M/dt1 TJ = 25 °C - 180 - dI(rec)M/dt2 TJ = 125 °C - 100 - MIN. TYP. MAX. UNITS - - 300 °C - - 2.0 IF = 6.0 A dIF/dt = 200 A/µs VR = 200 V A nC A/µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Lead temperature Tlead Thermal resistance, junction to case RthJC Thermal resistance, junction to ambient RthJA Typical socket mount - - 80 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.5 - - 2.0 - g - 0.07 - oz. 6.0 (5.0) - 12 (10) kgf · cm (lbf · in) 0.063" from case (1.6 mm) for 10 s Weight Mounting torque Marking device www.vishay.com 2 Case style TO-247AC modified For technical questions, contact: [email protected] K/W HFA06PB120 Document Number: 94037 Revision: 25-Jul-08 HFA06PB120PbF HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 6 A 1000 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) 100 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 1 TJ = 150 °C 100 TJ = 125 °C TJ = 100 °C 10 1 0.1 TJ = 25 °C 0.01 0.1 1 0 4 3 2 5 0 6 400 200 600 800 1000 1200 1400 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 100 TJ = 25 °C 10 1 1 10 100 1000 10 000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Response 10 1 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 PDM D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 0.01 t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94037 Revision: 25-Jul-08 For technical questions, contact: [email protected] www.vishay.com 3 HFA06PB120PbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 6 A 110 1000 100 IF = 6 A IF = 4 A 90 800 VR = 200 V TJ = 125 °C TJ = 25 °C 600 IF = 6 A IF = 4 A Qrr (nC) trr (ns) 80 70 60 400 50 40 30 200 VR = 200 V TJ = 125 °C TJ = 25 °C 20 100 0 100 1000 dIF/dt (A/µs) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt Fig. 7 - Typical Stored Charge vs. dIF/dt 10 000 25 VR = 200 V TJ = 125 °C TJ = 25 °C 15 IF = 6 A IF = 4 A dI(rec)M/dt (A/µs) 20 Irr (A) 1000 dIF/dt (A/µs) IF = 6 A IF = 4 A 10 1000 100 VR = 200 V TJ = 125 °C TJ = 25 °C 5 0 100 www.vishay.com 4 1000 10 100 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 6 - Typical Recovery Current vs. dIF/dt Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt For technical questions, contact: [email protected] Document Number: 94037 Revision: 25-Jul-08 HFA06PB120PbF HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 6 A VR = 200 V 0.01 Ω L = 70 µH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94037 Revision: 25-Jul-08 For technical questions, contact: [email protected] www.vishay.com 5 HFA06PB120PbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 6 A ORDERING INFORMATION TABLE Device code HF A 06 PB 1 2 3 4 1 - HEXFRED® family 2 - Process designator: 120 PbF 6 5 A = A subs. elec. irrad. B = B subs. platinum 3 - Average current: 06 = 6 A 4 - Package outline: PB = TO-247 2 lead 5 - Voltage code: 120 = 1200 V 6 - None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95253 Part marking information http://www.vishay.com/doc?95255 www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 94037 Revision: 25-Jul-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1