, line. J.S.IILS.U Cx TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IRF430-433/IRF830-833 MTM/MTP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V/500 V Description TO-220AB These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VGS Rated at ± 20 V • Silicon Gate for Fast Switching Speeds • IDSS. VDs(on), SOA and VQS(ih) Specified at Elevated Temperature • Rugged IRF430 IRF431 IRF432 IRF433 MTM4N45 MTM4N50 Maximum Ratings IRF830 IRF831 IRF832 IRF833 MTP4N4S MTP4N50 Rating IRF430/432 IRF830/B32 MTM/MTP4N50 Rating IRF431/433 IRF831/833 MTM/MTP4N4S Unit VDss Drain to Source Voltage 500 450 V VDGR Drain to Gate Voltage RQS = 20 kfl 500 450 V Symbol Characteristic VGS Gate to Source Voltage ±20 ±20 V Tj, Tslfl Operating Junction and Storage Temperature -55 to +150 -55 to +150 •c TL Maximum Lead Temperature for Soldering Purposes, 1/8' From Case for 5 s 275 275 •c Maximum On-State Characteristics RDS(on) Static Drain-to-Source On Resistance ID Drain Current Continuous Pulsed IRF430/431 IRF830/831 IRF432/433 IRF832/833 MTM/MTP4N45 MTM/MTP4N45 1.5 2.0 1.5 4.5 18 4.0 16 4.0 10 n A Maximum Thermal Characteristics RSJC Thermal Resistance, Junction to Case 1.67 1.67 1.67 "C/W RSJA Thermal Resistance, Junction to Ambient 60 60 60 °c/w PD Total Power Dissipation at Tc - 25°C 75 75 75 w NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press, However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors IRF430-433/IRF830-833 Electrical Characteristics (Tc = 25°C unless otherwise noted) Characteristic Symbol Win Max Unit Test Conditions Off Characteristics V(BR)DSS bss Drain Source Breakdown Voltage1 V IRF430/432/830/832 500 IRR31/433/831/833 450 Zero Gate Voltage Drain Current 250 1000 less Gate-Body Leakage Current IRF430-433 ±100 IRF830-833 ±500 VGS - 0 V, b = 250 /uA UA Vps = Rated VDSs, VGS = 0 V M VDS = 0.8 x Rated VDSS, V Q S - O V, T C =125°C nA VGS - ±20 V. VDS = 0 V On Characteristics Vosph) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistanoe2 ais 2.0 4.0 IRF430/431/830/831 1.5 IRF432/433/832/833 2.0 2.S Forward Transconductance V b = 250 |uA, VDS = VGS n VQS =10 V, ID = 2.5 A S ftj) VDS = 10 V, ID = 2.5 A PF VDS = 25 V, VQS - 0 V f - 1.0 MHz Dynamic Characteristics ciss Input Capacitance 800 GOSS Output Capacitance 200 pF GISS Reverse Transfer Capacitance 60 PF Switching Characteristics (TC = 25'1C, Figures 12. 13) td(on) Turn-On Delay Time 30 ns tr Rise Time 30 ns td(oH) Turn-Off Delay Time 55 ns t| Fall Time 30 ns °g Total Gate Charge 30 nC Symbol VQD = 225 V, ID - 2.5 A VGS= 10 V, RGEN = 15 H RGs = 15 fl VGS- 10 V, ID = 7.0 A VDS = 180 v Characteristic Typ Max Unit Test Conditions Source-Drain Diode Characteristics VSD t,, Diode Forward Voltage IRF430/431/830/831 1.4 V ls = 4.5 A; VGS - 0 V IRF432/433/832/833 1,3 V ls = 4.0 A; VGS - 0 V ns ls = 4.5 A; dls/dt=- 100 A/jjS Reverse Recovery Time Notes 1- Tj=+a5°C to +1EO-C 2. Pulso last Pulse width < 60 (is. Duty cycle < 1 % 600 MTM/MTP4N45/4N50 Electrical Characteristics (Tc = 25°C unless otherwise noted) Characteristic Symbol Mln Max Unit Test Conditions Off Characteristics V(BR)DSS loss IGSS Drain Source Breakdown Voltage1 V MTM/MTP4N50 500 MTM/MTP4N45 450 0.25 Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS - 0 V, b - 5-0 mA mA Vos = 0.85 x Rated VDSS, VGS - 0 V 2.5 mA VDs - 0.85 x Rated VQSS. V Q S ^ O V. TC=100°C ±500 nA VGS = ± 20 V, VDS = 0 V ID "1.0 mA, VDS = VGS ID =1.0 mA, VDS = VGS, On Characteristics Vas(ih) Gate Threshold Voltage 2.0 4.5 V 1.5 4.0 V TC = 100°C RDS(on) Static Drain-Source On-Resistance2 1.5 n Ves = 10 V, I0 = 2.0 A VDS(on) Drain-Source On-Voltage2 3.0 V VQS -10 V, ID = 2,0 V 7,0 V VQs-10 V, ID = 4.0 A 6.0 V VGS =10 V, ID -4.0 A T C -100«C S (U) VDS =10 V, ID = 2.0 A pF VDS = 25 V, VGS = 0 V f=1.0 MHz 9ls Forward Transconductance 2.0 Dynamic Characteristics Q83 Input Capacitance coss Output Capacitance Qss Reverse Transfer Capacitance 1200 300 PF 80 PF Switching Characteristics (Tc = 25°C, Figures 12, 13)3 tdton) Turn-On Delay Time 50 ns t, Rise Time 100 ns td(oll) Turn-Off Delay Time 200 ns tf Fall Time 100 ns 60 nC Q9 Total Gate Charge Motes 1. Tj-+25'C to +150-C 2. Pulse lest Pulse width < SO ps, Duly cycle <1% 3. Switching time measurements performed on LEM TR-58 test equipment. VDD = 25 V, ID = 2.0 A VGS =10 V, RGEN-SO « RGS = 50 S7 VGS -10 V, ID = 7.0 A VDD =180 V