e ADVANCED LINEAR DEVICES, INC. TM EPAD EN ® AB LE D ALD810017/ALD910017 QUAD/DUAL SUPERCAPACITOR AUTO BALANCING (SAB™) MOSFET ARRAY GENERAL DESCRIPTION FEATURES & BENEFITS The ALD810017/ALD910017 are members of the ALD8100xx (quad) and ALD9100xx (dual) family of Supercapacitor Auto Balancing MOSFETs, or SAB™ MOSFETs. SAB MOSFETs are built with production proven EPAD® technology and are designed to address voltage and leakage-current balancing of supercapacitors connected in series. Supercapacitors, also known as ultracapacitors or supercaps, connected in series can be leakage-current balanced by using a combination of one or more devices connected across each supercapacitor stack to prevent over-voltages. • Simple and economical to use • Precision factory trimmed • Automatically regulates and balances leakage currents • Effective for supercapacitor charge-balancing • Balances up to 4 supercaps with a single IC package • Balances 2-cell, 3-cell, 4-cell series-connected supercaps • Scalable to larger supercap stacks and arrays • Near zero additional leakage currents • Zero leakage at 0.3V below rated voltages • Balances series and/or parallel-connected supercaps • Leakage currents are exponential function of cell voltages • Active current ranges from <0.3nA to >1000µA • Always active, always fast response time • Minimizes leakage currents and power dissipation The ALD810017 offers a set of unique, precise operating voltage and current characteristics for each of four SAB MOSFET devices, as shown in its Operating Electrical Characteristics table. It can be used to balance up to four supercapacitors connected in series. The ALD910017 has its own set of unique precision Operating Electrical Characteristics for each of its two SAB MOSFET devices, suitable for up to two series-connected supercapacitors. Each SAB MOSFET features a precision gate threshold voltage in the Vt mode, which is 1.70V when the gate-drain source terminals (VGS = VDS) are connected together at a drain-source current of IDS(ON) = 1µA. In this mode, input voltage VIN = VGS = VDS. Different VIN produces an Output Current IOUT = IDS(ON) characteristic and results in an effective variable resistor that varies in value exponentially with VIN. This VIN, when connected across each supercapacitor in a series, balances each supercapacitor to within its voltage and current limits. APPLICATIONS • Series-connected supercapacitor cell leakage balancing • Energy harvesting • Long term backup battery with supercapacitor outputs • Zero-power voltage divider at selected voltages • Matched current mirrors and current sources • Zero-power mode maximum voltage limiter • Scaled supercapacitor stacks and arrays PIN CONFIGURATIONS When VIN = 1.70V is applied to an ALD810017/ALD910017, its IOUT is 1µA. For a 100mV increase in VIN, to 1.80V, IOUT increases by about tenfold. For an additional increase in VIN to 1.92V for the ALD910017 (1.94V for the ALD810017), IOUT increases one hundredfold, to 100µA. Conversely, for a 100mV decrease in VIN to 1.60V, IOUT decreases to one tenth of its previous value, to 0.1µA. Another 100mV decrease in input voltage would reduce IOUT to 0.01µA. Hence, when an ALD810017/ALD910017 SAB MOSFET is connected across a supercapacitor that charges to less than 1.50V, it would dissipate essentially no power. (Continued on next page) ALD810017 IC* 1 DN1 2 M1 M2 GN1 3 SN1 4 V- V- V- M4 M3 5 DN4 6 16 IC* 15 DN2 14 GN2 13 SN2 12 V+ 11 DN3 10 GN3 9 SN3 PRODUCT FAMILY SPECIFICATIONS For more information on supercapacitor balancing, how SAB MOSFETs achieve automatic supercapacitor balancing, the device characteristics of the SAB MOSFET family, product family product selection guide, applications, configurations, and package information, please download from www.aldinc.com the document: GN4 7 SN4 8 V- SCL PACKAGE “ALD8100xx/ALD9100xx Family of Supercapacitor Auto Balancing (SAB™) MOSFET ARRAYs” ALD910017 IC* ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS)) Operating Temperature Range Package 16-Pin SOIC 8-Pin SOIC 0°C to +70°C (Commercial) ALD810017SCL ALD910017SAL -40°C to +85°C (Industrial) V- 1 V- 8 V+ GN1 2 7 GN2 DN1 6 DN2 3 SN1 4 5 SN2, V- ALD810017SCLI SAL PACKAGE ALD910017SALI *IC pins are internally connected, connect to V- ©2014 Advanced Linear Devices, Inc., Vers. 2.0 www.aldinc.com 1 of 6 GENERAL DESCRIPTION (CONT.) APPLYING THE ALD810017/ALD910017: The voltage dependent characteristic of the ALD810017/ ALD910017 on-resistance is effective in controlling excessive voltage rise across a supercapacitor when connected across it. In series-connected supercapacitor stacks, when one supercapacitor voltage rises, the voltage of the other supercapacitors drops, with the ones that have the highest leakage currents having the lowest supercapacitor voltages. The SAB MOSFETs connected across these supercapacitors would exhibit complementary opposing current levels, resulting in little additional leakage currents other than those caused by the supercapacitors themselves. 1) Select a maximum supercapacitor leakage current limit for any supercapacitor used in the stack. This is the same as output current, IOUT = IDS(ON), of the ALD810017/ALD910017. Test that each supercapacitor leakage current meets this maximum current limit before use in the stack. For technical assistance, please contact ALD technical support at [email protected]. 2) Determine whether the input voltage VIN (VGS = VDS) at that IOUT is acceptable for the intended application. This voltage is the same voltage as the maximum desired operating voltage of the supercapacitor. For example, with the ALD810017, IOUT = 1000µA corresponds to VIN = 2.22V. 3) Determine that the operating voltage margin, due to various tolerances and/or temperature effects, is adequate for the intended operating environment of the supercapacitor. SCHEMATIC DIAGRAM OF A TYPICAL CONNECTION FOR A FOUR-SUPERCAP STACK ALD8100XX 2, 12 3 V+ ≤ +15.0V IDS(ON) ≤ 80mA + M1 4 SCHEMATIC DIAGRAM OF A TYPICAL CONNECTION FOR A TWO-SUPERCAP STACK C1 15 14 M2 13 11 10 7 + M4 2 V2 + IDS(ON) ≤ 80mA + C1 M1 4 C3 7 V3 + V+ ≤ +15.0V C2 3, 8 M3 9 6 ALD9100XX V1 6 M2 V1 + C2 C4 1, 5 1, 5, 8, 16 1-16 DENOTES PACKAGE PIN NUMBERS C1-C4 DENOTES SUPERCAPACITORS ALD810017/ALD910017 1-8 DENOTES PACKAGE PIN NUMBERS C1-C2 DENOTES SUPERCAPACITORS Advanced Linear Devices, Inc. 2 of 6 ABSOLUTE MAXIMUM RATINGS V+ to V- voltage 15.0V Drain-Source voltage, VDS 10.6V Gate-Source voltage, VGS 10.6V Operating Current 80mA Power dissipation 500mW Operating temperature range SCL 0°C to +70°C Operating temperature range SCLI -40°C to +85°C Storage temperature range -65°C to +150°C Lead temperature, 10 seconds +260°C CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. OPERATING ELECTRICAL CHARACTERISTICS V+ = +5V, V- = GND, TA = 25°C, VIN = VGS =VDS, IOUT = IDS(ON) unless otherwise specified ALD810017 Parameter Symbol Min Typ Max Unit Test Conditions Gate Threshold Voltage Vt 1.68 1.70 1.72 V VGS = VDS; IDS(ON) = 1µA Offset Voltage VOS 5 20 mV Vt1 - Vt2 or Vt3 - Vt4 Offset Voltage Tempco TCVOS 5 µV/C Vt1 - Vt2 or Vt3 - Vt4 Gate Threshold Voltage Tempco TCVt -2.2 mV/C VGS = VDS; IDS(ON) = 1µA Output Current Drain Source On Resistance IOUT RDS(ON) 0.0001 13000 µA MΩ VIN = 1.30V Output Current Drain Source On Resistance IOUT RDS(ON) 0.001 1400 µA MΩ VIN = 1.40V Output Current Drain Source On Resistance IOUT RDS(ON) 0.01 150 µA MΩ VIN = 1.50V Output Current Drain Source On Resistance IOUT RDS(ON) 0.1 16 µA MΩ VIN = 1.60V Output Current Drain Source On Resistance IOUT RDS(ON) 1 1.7 µA MΩ VIN = 1.70V Output Current Drain Source On Resistance IOUT RDS(ON) 10 0.18 µA MΩ VIN = 1.80V Output Current Drain Source On Resistance IOUT RDS(ON) 100 0.019 µA MΩ VIN = 1.94V Output Current Drain Source On Resistance IOUT RDS(ON) 300 0.007 µA MΩ VIN = 2.04V Output Current Drain Source On Resistance IOUT RDS(ON) 1000 0.002 µA MΩ VIN = 2.22V Output Current Drain Source On Resistance IOUT RDS(ON) 3000 0.001 µA MΩ VIN = 2.52V Output Current Drain Source On Resistance IOUT RDS(ON) 10000 0.0003 µA MΩ VIN = 3.12V Drain Source Breakdown Voltage BVDSX Drain Source Leakage Current1 IDS(OFF) Gate Leakage Current1 IGSS 10.6 V 10 5 400 pA 4 nA 200 pA 1 nA VGS = 5.0V, VDS = 0V VGS = 5.0V, VDS = 0V, TA = +125°C VGS = 0V, VDS = 5.0V Input Capacitance CISS 15 pF Turn-on Delay Time ton 10 ns Turn-off Delay Time toff 10 ns 60 dB Crosstalk ALD810017/ALD910017 Advanced Linear Devices, Inc. VIN = VGS = VDS = Vt - 1.0 VIN = VGS = VDS = Vt - 1.0, TA = +125°C f = 100KHz 3 of 6 ABSOLUTE MAXIMUM RATINGS V+ to V- voltage 15.0V Drain-Source voltage, VDS 10.6V Gate-Source voltage, VGS 10.6V Operating Current 80mA Power dissipation 500mW Operating temperature range SAL 0°C to +70°C Operating temperature range SALI -40°C to +85°C Storage temperature range -65°C to +150°C Lead temperature, 10 seconds +260°C CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. OPERATING ELECTRICAL CHARACTERISTICS V+ = +5V, V- = GND, TA = 25°C, VIN = VGS =VDS, IOUT = IDS(ON) unless otherwise specified ALD910017 Parameter Symbol Min Typ Max Unit Test Conditions Gate Threshold Voltage Vt 1.68 1.70 1.72 V VGS = VDS; IDS(ON) = 1µA Offset Voltage VOS 5 20 mV Vt1 - Vt2 Offset Voltage Tempco TCVOS 5 µV/C Vt1 - Vt2 Gate Threshold Voltage Tempco TCVt -2.2 mV/C VGS = VDS; IDS(ON) = 1µA Output Current Drain Source On Resistance IOUT RDS(ON) 0.0001 13000 µA MΩ VIN = 1.30V Output Current Drain Source On Resistance IOUT RDS(ON) 0.001 1400 µA MΩ VIN = 1.40V Output Current Drain Source On Resistance IOUT RDS(ON) 0.01 150 µA MΩ VIN = 1.50V Output Current Drain Source On Resistance IOUT RDS(ON) 0.1 16 µA MΩ VIN = 1.60V Output Current Drain Source On Resistance IOUT RDS(ON) 1 1.7 µA MΩ VIN = 1.70V Output Current Drain Source On Resistance IOUT RDS(ON) 10 0.18 µA MΩ VIN = 1.80V Output Current Drain Source On Resistance IOUT RDS(ON) 100 0.019 µA MΩ VIN = 1.92V Output Current Drain Source On Resistance IOUT RDS(ON) 300 0.007 µA MΩ VIN = 2.00V Output Current Drain Source On Resistance IOUT RDS(ON) 1000 0.002 µA MΩ VIN = 2.14V Output Current Drain Source On Resistance IOUT RDS(ON) 3000 0.001 µA MΩ VIN = 2.20V Output Current Drain Source On Resistance IOUT RDS(ON) 10000 0.0003 µA MΩ VIN = 2.70V Drain Source Breakdown Voltage BVDSX Drain Source Leakage Current1 IDS(OFF) Gate Leakage Current1 IGSS 10.6 V 10 5 400 pA 4 nA 200 pA 1 nA VGS = 5.0V, VDS = 0V VGS = 5.0V, VDS = 0V, TA = +125°C VGS = 0V, VDS = 5.0V Input Capacitance CISS 30 pF Turn-on Delay Time ton 10 ns Turn-off Delay Time toff 10 ns 60 dB Crosstalk ALD810017/ALD910017 Advanced Linear Devices, Inc. VIN = VGS = VDS = Vt - 1.0 VIN = VGS = VDS = Vt - 1.0, TA = +125°C f = 100KHz 4 of 6 SOIC-16 PACKAGE DRAWING 16 Pin Plastic SOIC Package E Millimeters Dim S (45°) D A Min 1.35 Max 1.75 Min 0.053 Max 0.069 A1 0.10 0.25 0.004 0.010 b 0.35 0.45 0.014 0.018 C 0.18 0.25 0.007 0.010 D-16 9.80 10.00 0.385 0.394 E 3.50 4.05 0.140 0.160 1.27 BSC e e Inches 0.050 BSC H 5.70 6.30 0.224 0.248 L 0.60 0.937 0.024 0.037 A ø 0° 8° 0° 8° A1 S 0.25 0.50 0.010 0.020 b S (45°) H L ALD810017/ALD910017 C ø Advanced Linear Devices, Inc. 5 of 6 SOIC-8 PACKAGE DRAWING 8 Pin Plastic SOIC Package E Millimeters Dim S (45°) D A Min 1.35 Max 1.75 Min 0.053 Max 0.069 A1 0.10 0.25 0.004 0.010 b 0.35 0.45 0.014 0.018 C 0.18 0.25 0.007 0.010 D-8 4.69 5.00 0.185 0.196 E 3.50 4.05 0.140 0.160 1.27 BSC e A A1 e b Inches 0.050 BSC H 5.70 6.30 0.224 0.248 L 0.60 0.937 0.024 0.037 ø 0° 8° 0° 8° S 0.25 0.50 0.010 0.020 S (45°) H L ALD810017/ALD910017 C ø Advanced Linear Devices, Inc. 6 of 6