MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,25V 25VOptiMOS™5PowerMOSFET BSC0511NDI DataSheet Rev.2.0 Final Industrial&Multimarket BSC0511NDI Dual N-Channel OptiMOS™5 MOSFET Product Summary Features • Dual N-channel OptiMOS™ MOSFET Q1 Q2 25 25 V VGS=10 V 2.8 1.0 mW VGS=4.5 V 4.2 1.4 40 40 VDS • Optimized for high performance buck converters RDS(on),max • Logic level (4.5V rated) • 100% avalanche tested ID • Qualified according to JEDEC for target applications A 1) • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 VPhase • Integrated monolithic Schottky-like diode Type Package BSC0511NDI Marking 0511NDI PG-TISON-8 Maximum ratings2) at T j=25 °C, unless otherwise specified Parameter Value Symbol Conditions Unit Q1 Q2 T C=70 °C, V GS=10 V 40 40 T A=25 °C, V GS=4.5 V3) 19 33 V GS=4.5 V3) 15 26 T A=25 °C, V GS=10 V4) 15 26 I D,pulse T C=70 °C 160 160 Avalanche energy, single pulse E AS Q1: I D=20 A, Q2: I D=20 A, R GS=25 W 12 90 Gate source voltage V GS Power dissipation P tot Continuous drain current ID T A=70 °C, Pulsed drain current5) ±16 T A=25 °C2) T A=25 °C, minimum footprint4) Operating and storage temperature T j, T stg 2.5 1.0 1.0 W °C 55/150/56 IEC climatic category; DIN IEC 68-1 Rev.2.0 mJ V 2.5 -55 ... 150 A page 1 2015-03-04 BSC0511NDI Parameter Values Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction case Q1 R thJC - - 4.3 Q2 - - 1.7 Thermal resistance, junction ambient1) Q1 R thJA 6 cm2 cooling area3) - - 50 minimal footprint, steady state4) - - 125 25 - - V - 15 - mV/K V DS=V GS, I D=250 µA 1.2 1.6 2 V V DS=20 V, V GS=0 V, T j=25 °C - - 1 µA - - 500 V DS=20 V, V GS=0 V, T j=125 °C - - 0.1 - 3 - V GS=16 V, V DS=0 V - - 100 nA - 3.0 4.2 mW - 1.0 1.4 - 2.2 2.8 Q2 - 0.8 1.0 Q1 R G - 0.7 1.2 Q2 - 1.1 1.8 55 110 - 75 150 - K/W Q2 Q1 Q2 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Q1 V (BR)DSS V GS=0 V, I D=10 mA Q2 Breakdown voltage temperature coefficient Q1 dV (BR)DSS I D=10 mA, referenced to 25 °C Q2 /dT j Gate threshold voltage Q1 V GS(th) Q2 Zero gate voltage drain current Q1 I DSS Q2 Q1 Q2 Gate-source leakage current Q1 I GSS mA Q2 Drain-source on-state resistance Q1 R DS(on) V GS=4.5 V, I D=25 A Q2 Q1 V GS=10 V, I D=25 A Gate resistance Transconductance Q1 g fs Q2 Rev.2.0 |V DS|>2|I D|R DS(on)max, I D=30 A page 2 W S 2015-03-04 BSC0511NDI Parameter Values Symbol Conditions Unit min. typ. max. Q1 C iss - 780 1100 Q2 - 2400 3300 - 390 530 - 1400 1900 Q1 Crss - 38 - Q2 - 130 - Q1 t d(on) - 3 - Q2 - 5 - - 3 - - 5 - - 13 - Q2 - 26 - Q1 t f - 2 - Q2 - 4 - Q1 Q gs - 2.0 - Gate to drain charge Q gd - 1.4 - Gate charge total Qg - 5.6 7.8 Gate plateau voltage V plateau - 2.6 - V - 5.6 - nC - 4.3 - Dynamic characteristics Input capacitance6) Output capacitance6) Q1 C oss Q2 Reverse transfer capacitance Turn-on delay time Rise time Q1 t r Q2 Turn-off delay time Fall time Q1 t d(off) V GS=0 V, V DS= 12 V, f =1 MHz V DD=12 V, V GS=10 V, R G=1.6 W, I D=30 A pF ns Gate Charge Characteristics Gate to source charge Gate to source charge Q2 Q gs V DD=12 V, I D=30 A, V GS=0 to 4.5 V nC Gate to drain charge Q gd Gate charge total Qg 17 23 Gate plateau voltage V plateau 2.3 - V - 7.6 - nC - 28 - Output charge Q1 Q oss V DD=12 V, V GS=0 V Q2 Rev.2.0 page 3 2015-03-04 BSC0511NDI Parameter Values Symbol Conditions Unit min. typ. max. - - 29 - - 40 Q1 I S,pulse - - 160 Q2 - - 160 Reverse Diode Diode continuous forward current Q1 I S Q2 A T C=25 °C Diode pulse current Diode forward voltage Reverse recovery charge Q1 V SD V GS=0 V, I F=25 A, T j=25 °C - 0.83 1 Q2 V GS=0 V, I F=11 A, T j=25 °C - 0.48 0.7 - 5 - - 5 - Q1 Q rr Q2 1) J-STD20 and JESD22 2) One transistor active V R=12 V, I F=10 A, di F/dt =400 A/µs V nC 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 4) Device mounted on a minimum pad (one layer, 70 µm thick). One transistor active. 5) See figure 3 for more detailed information. 6) Defined by design. Not subject to production test Rev.2.0 page 4 2015-03-04 BSC0511NDI 1 Power dissipation (Q1) P tot=f(T A)3) 1.2 1.2 1 1 0.8 0.8 Ptot [W] Ptot [W] P tot=f(T A) 2 Power dissipation (Q2) 3) 0.6 0.6 0.4 0.4 0.2 0.2 0 0 0 40 80 120 160 0 40 TA [°C] 80 120 160 120 160 TA [°C] 3 Drain current (Q1) 4 Drain current (Q2) I D=f(T C) I D=f(T C) parameter: V GS≥10 V parameter: V GS≥10 V 40 40 30 30 ID [A] 50 ID [A] 50 20 20 10 10 0 0 0 40 80 120 160 TC [°C] Rev.2.0 0 40 80 TC [°C] page 5 2015-03-04 BSC0511NDI 5 Safe operating area (Q1) 6 Safe operating area (Q2) I D=f(V DS); T C=25 °C; D =0 I D=f(V DS); T C=25 °C; D =0 parameter: t p parameter: t p 103 103 1 µs 1 µs 10 µs 102 10 µs 102 100 µs 100 µs 10 ms 1 ms 101 ID [A] ID [A] 1 ms 10 ms 101 DC DC 100 100 10-1 10-1 10-1 100 101 102 10-1 100 VDS [V] 101 102 VDS [V] 7 Max. transient thermal impedance (Q1) 8 Max. transient thermal impedance (Q2) Z thJC=f(t p) Z thJC=f(t p) parameter: D =t p/T parameter: D =t p/T 101 101 100 100 ZthJC [K/W] ZthJC [K/W] 0.5 0.2 0.1 0.2 0.1 0.05 10-1 0.05 0.5 0.02 0.01 0.02 0.01 single pulse single pulse 10-1 10-2 10-5 10-4 10-3 10-2 10-1 100 tp [s] Rev.2.0 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 6 2015-03-04 BSC0511NDI 9 Typ. output characteristics (Q1) 10 Typ. output characteristics (Q2) I D=f(V DS); T j=25 °C I D=f(V DS); T j=25 °C parameter: V GS parameter: V GS 160 400 4.5 V 4.5 V 10 V 3.5 V 4V 10 V 3.2 V 4V 3.5 V 120 300 3.3 V 3V ID [A] ID [A] 3V 80 200 2.8 V 2.8 V 40 100 0 0 0 1 2 3 0 1 VDS [V] 2 3 VDS [V] 11 Typ. drain-source on resistance (Q1) 12 Typ. drain-source on resistance (Q2) R DS(on)=f(I D); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 8 3 7 2.5 6 2 3.3 V 4 RDS(on) [mW] RDS(on) [mW] 5 3.5 V 4V 4.5 V 3 5V 3V 1.5 3.3 V 3.5 V 4V 4.5 V 1 5V 10 V 2 10 V 0.5 1 0 0 0 20 40 60 ID [A] Rev.2.0 0 20 40 60 80 ID [A] page 7 2015-03-04 BSC0511NDI I D=f(V GS); |V DS |>2 | I D| R DS(on)max I D=f(V GS); |V DS |>2 | I D| R DS(on)max parameter: T j parameter: T j 160 160 120 120 ID [A] 14 Typ. transfer characteristics (Q2) ID [A] 13 Typ. transfer characteristics (Q1) 80 40 80 40 150 °C 25 °C 150 °C 25 °C 0 0 0 1 2 3 0 4 1 2 VGS [V] 3 4 VGS [V] 15 Drain-source on-state resistance (Q1) 16 Drain-source on-state resistance (Q2) R DS(on)=f(T j); I D=25 A; V GS=10 V R DS(on)=f(T j); I D=25 A; V GS=10 V 1.6 4 3.5 1.2 2.5 typ RDS(on) [mW] RDS(on) [mW] 3 2 0.8 typ 1.5 1 0.4 0.5 0 0 -60 -20 20 60 100 140 180 Tj [°C] Rev.2.0 -60 -20 20 60 100 140 180 Tj [°C] page 8 2015-03-04 BSC0511NDI 18 Typ. gate threshold voltage (Q2) V GS(th)=f(T j); V GS=V DS; I D=250 µA V GS(th)=f(T j); V GS=V DS; I D=10 mA 2.8 2.8 2.4 2.4 2 2 1.6 1.6 VGS(th) [V] VGS(th) [V] 17 Typ. gate threshold voltage (Q1) 1.2 1.2 0.8 0.8 0.4 0.4 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 19 Typ. capacitances (Q1) 20 Typ. capacitances (Q2) C =f(V DS); V GS=0 V; f =1 MHz C =f(V DS); V GS=0 V; f =1 MHz 104 104 Ciss Coss Ciss 103 C [pF] C [pF] 103 Coss 102 Crss 102 Crss 101 101 0 5 10 15 20 25 VDS [V] Rev.2.0 0 5 10 15 20 25 VDS [V] page 9 2015-03-04 BSC0511NDI 21 Forward characteristics of reverse diode (Q1) 22 Forward characteristics of reverse diode (Q2) I F=f(V SD) I F=f(V SD) parameter: T j parameter: T j 103 103 100 °C 102 150 °C 102 25 °C -55 °C 25 °C IF [A] IF [A] 150 °C 101 100 101 100 10-1 10-1 0 0.2 0.4 0.6 0.8 1 1.2 0 0.2 0.4 VSD [V] 0.6 0.8 1 VSD [V] 23 Avalanche characteristics (Q1) 24 Avalanche characteristics (Q2) I AS=f(t AV); R GS=25 W I AS=f(t AV); R GS=25 W parameter: T j(start) parameter: T j(start) 102 102 25 °C IAV [A] IAV [A] 25 °C 101 100 °C 125 °C 100 °C 101 125 °C 100 100 100 101 102 103 tAV [µs] Rev.2.0 100 101 102 103 tAV [µs] page 10 2015-03-04 BSC0511NDI 25 Typ. gate charge (Q1) 26 Typ. gate charge (Q2) V GS=f(Q gate); I D=20 A pulsed V GS=f(Q gate); I D=20 A pulsed parameter: V DD parameter: V DD 10 10 8 8 12 V 12 V 5V 5V 20 V 20 V 6 VGS [V] VGS [V] 6 4 4 2 2 0 0 0 2 4 6 8 10 12 0 10 20 Qgate [nC] 30 40 Qgate [nC] 27 Drain-source breakdown voltage (Q1) 28 Typ. drain-source leakage current (Q2) V BR(DSS)=f(T j); I D=1 mA I DSS=f(V DS ); V GS=0 V parameter: T j 30 10-2 29 28 125 °C 10-3 27 IDSS [A] VBR(DSS) [V] 100 °C 26 25 75 °C 10-4 24 23 10-5 22 25 °C 21 10-6 20 -60 -20 20 60 100 140 180 5 10 15 20 VDSj [V] Tj [°C] Rev.2.0 0 page 11 2015-03-04 BSC0511NDI PG-TISON Rev.2.0 page 12 2015-03-04 BSC0511NDI PG-TISON-8 Rev.2.0 page 13 2015-03-04 25VOptiMOS™5PowerMOSFET BSC0511NDI RevisionHistory BSC0511NDI Revision:2015-03-09,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2015-03-09 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 15 Rev.2.0,2015-03-09