ON CPH3145 8-bit withstand voltage microcontroller Datasheet

CPH3145/CPH3245
Low VCE (sat) Bipolar Transistor
(PNP)NPN, (–)50V, (–)2A
Features
• Adoption of MBIT Process
• Large Current Capacity
• Low Collector to Emitter Saturation Voltage
• High Speed Switching
• Ultrasmall Package Facilitates Miniaturization in End Products
(mounting height : 0.9mm)
• High Allowable Power Dissipation
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ELECTRICAL CONNECTION
PNP
NPN
3
Typical Applications
• Relay Drivers
• Lamp Drivers
• Motor Drivers
• Flash
1
1
2
CPH3145
SPECIFICATIONS ( ) : CPH3145
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)
Parameter
Symbol
Value
VCBO
(−50)80
Collector to Emitter Voltage
VCES
(−50)80
V
Collector to Emitter Voltage
VCEO
(−)50
V
Emitter to Base Voltage
VEBO
(−)6
V
Collector Current
IC
(−)2
A
Collector Current (Pulse)
ICP
(−)4
Base Current
Collector Dissipation
When mounted on ceramic substrate
2
(600mm × 0.8mm)
IB
2
CPH3245
1 : Base
2 : Emitter
3 : Collector
Unit
Collector to Base Voltage
V
PACKING TYPE : TL
A
(−)400
mA
PC
0.9
W
Tj
150
°C
TL
CPH3145
LOT No.
DQ
Storage Temperature
Tstg
−55 to +150
°C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
LOT No.
MARKING
BE
Junction Temperature
3
CPH3245
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
June 2015 - Rev. 2
1
Publication Order Number :
CPH3145_CPH3245/D
CPH3145/CPH3245
ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2)
Parameter
Symbol
Value
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(−)40V, IE=0A
(−)1
μA
Emitter Cutoff Current
IEBO
VEB=(−)4V, IC=0A
(−)1
μA
DC Current Gain
hFE
fT
VCE=(−)2V, IC=(−)100mA
VCE=(−)10V, IC=(−)300mA
Output Capacitance
Collector to Emitter Saturation
Voltage
Base to Emitter Saturation Voltage
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown Voltage
Cob
VCB=(−)10V, f=1MHz
Turn-ON Time
ton
Storage Time
tstg
Gain-Bandwidth Product
VCE(sat)
VBE(sat)
200
560
420
MHz
(16)8
IC=(−)1A, IB=(−)50mA
pF
(−165)130
(−330)260
(−)0.9
(−)1.2
mV
V
V(BR)CBO
IC=(−)10μA, IE=0A
(−50)80
V
V(BR)CES
IC=(−)100μA, RBE=0Ω
(−50)80
V
V(BR)CEO
IC=(−)1mA, RBE=∞
(−)50
V
V(BR)EBO
IE=(−)10μA, IC=0A
(−)6
See specified Test Circuit
V
(35)35
ns
(200)330
ns
Fall Time
(24)40
ns
tf
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
INPUT
OUTPUT
IB2
VR
INPUT
RB
IB1
PW=20μs
D.C.≤1%
RL
50Ω
OUTPUT
IB2
VR
RB
RL
50Ω
+
100μF
VBE=5V
+
470μF
+
100μF
VBE= --5V
VCC= --25V
IC= --10IB1=10IB2= --0.7A
IC=10IB1= --10IB2=0.7A
CPH3145
CPH3245
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2
+
470μF
VCC=25V
CPH3145/CPH3245
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3
CPH3145/CPH3245
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4
CPH3145/CPH3245
PACKAGE DIMENSIONS
unit : mm
CPH3
CASE 318BA
ISSUE O
Recommended
Soldering Footprint
1 : Base
2 : Emitter
0.6
2.4
1.4
3 : Collector
0.95
0.95
ORDERING INFORMATION
Device
Marking
Package
Shipping (Qty / Packing)
CPH3145-TL-E
BE
3,000 / Tape & Reel
CPH3245-TL-E
DQ
CPH3
SC-59, SOT-23, TO-236
(Pb-Free)
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
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