LESHAN RADIO COMPANY, LTD. Dual Serise Switching Diodes BAV99WT1 BAV99RWT1 3 The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications • ESD Protection • Polarity Reversal Protection 1 2 BAV99WT1 • Data Line Protection • Inductive Load Protection • Steering Logic CASE 419–02, STYLE 9 SOT–323 (SC–70) BAV99RWT1 CASE 419–02, STYLE 10 SOT–323 (SC–70) CATHODE 2 ANODE 1 3 CATHODE/ANODE ORDERING INFORMATION BAV99WT1 Device Package Shipping BAV99WT1 BAV99RWT1 SOT–323(SC–70) SOT–323(SC–70) 3000/Tape & Reel 3000/Tape & Reel CATHODE ANODE 2 1 Preferred: devices are recommended choices for future use and best overall value. 3 CATHODE/ANODE BAV99RWT1 DEVICE MARKING BAV99WT1 = A7; BAV99RWT1 = F7 MAXIMUM RATINGS (Each Diode) Rating Reverse Voltag Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage Average Rectified Forward Current (Note 1.) (averaged over any 20 ms period) Repetitive Peak Forward Current Non–Repetitive Peak Forward Current t = 1.0 µs t = 1.0 ms t = 1.0 S Symbol VR IF IFM(surge) VRRM IF(AV) IFRM IFSM Value Unit 70 215 500 70 715 Vdc mAdc mAdc V mA 450 mA A 2.0 1.0 0.5 1. FR–5 = 1.0 × 0.75 × 0.062 in. BAV99WT1 BAV99RWT1–1/3 LESHAN RADIO COMPANY, LTD. BAV99WT1 BAV99RWT1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board, (Note 1.) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Symbol PD Max 200 Unit mW 1.6 mW/°C RθJA Total Device Dissipation Alumina Substrate, (Note 2.) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature PD 625 300 °C/W mW RθJA TJ,T stg 2.4 417 –65 to +150 mW/°C °C/W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode) Characteristic Symbol Min Max Unit V(BR) IR 70 –– –– –– –– –– 2.5 30 50 1.5 Vdc µAdc VF –– –– –– –– 715 855 1000 1250 mVdc trr –– 6.0 ns VFR –– 1.75 V OFF CHARACTERISTICS Reverse Breakdown Voltage Reverse Voltage Leakage Current Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (I(BR) = 100 µA) (VR = 70 Vdc) (VR = 25 Vdc, TJ = 150°C) (VR = 70 Vdc, TJ = 150°C) CD (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Reverse Recovery Time RL = 100 Ω (IF=IR=10 mAdc, iR(REC)=1.0mAdc) (Figure 1) Forward Recovery Voltage (IF = 10 mA, t r = 20 ns) pF 1. FR–5 = 1.0 × 0.75 × 0.062 in. 2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina. +10 V 2.0 k 820 Ω 100 µH 0.1 µF 50 Ω OUTPUT PULSE GENERATOR 0.1µF IF tr tp t IF t rr 10% 90% D.U.T. 50 Ω INPUT SAMPLING OSCILLOSCOPE V R INPUT SIGNAL t i R(REC) = 1.0 mA IR OUTPUT PULSE (I F = I R = 10 mA; MEASURED at i R(REC) = 1.0 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA. Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA. Notes: 3. t p » t rr Figure 1. Recovery Time Equivalent Test Circuit BAV99WT1 BAV99RWT1–2/3 LESHAN RADIO COMPANY, LTD. BAV99WT1 BAV99RWT1 10 IR , REVERSE CURRENT (µA) 10 1.0 0.1 1.0 0.1 0.01 0.001 0.2 0.4 0.6 0.8 1.0 0 1.2 10 20 30 40 VF , FORWARD VOLTAGE (VOLTS) VR , REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 50 0.68 CD DIODE CAPACITANCE (pF) IF , FORWARD CURRENT (mA) 100 0.64 0.60 0.56 0.52 0 2 4 6 8 VR , REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance BAV99WT1 BAV99RWT1–3/3