GBJ8005 THRU GBJ810 SINGLE PHASE8.0AMPS.GLASS PASSIVATED BRIDGE RECTIFIERS GBJ FEATURE .UL Listed Under Recognized Component Index, File Number E338195 .Glass passivated chip junctions .High case dielectric stength .Low Reverse Leakage Current .High surge current capability .Ideal for Printed Circuit Board Applications MECHANICAL DATA .Case: GBJ .Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 .Terminals: Pure tin plated, Lead free. Leads solderable per MIL-STD-750, Method 2026. .Polarity: Molded on Body .Mounting: Through Hole for #6 Screw .Mounting Torque: 5.0 in-lbs Maximum .Weight:6.6grams 1.193(30.3) 1.169(29.7) .106(2.7) .096(2.3) .094(2.4) .078(2.0) .043(1.1) .035(0.9) + ~ ~ - .119 (0.5) .165(4.2) .150(3.8) .433(11) .354(9.0) .189(4.8) .177(4.5) HOLE FOR NO. 6 SCREW .800(20.3) .776(19.7) .441(11.2) .425(10.8) + .184(3.4) .122(3.1) .114(2.9) .098(2.5) .708(18.0) .669(17.0) .303(7.7) .303(7.7) .287(7.3) .287(7.3) .150(3.8) .138(3.5) .031(0.8) .023(0.6) ～～ - Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC blocking Voltage Maximum Average Forward (with heatsink Note2) Rectified Current @ TC=110°C(without heatsink) SYM BOL GBJ 8005 GBJ 801 GBJ 802 GBJ 804 GBJ 806 GBJ 808 GBJ 810 units VRRM VRMS VDC 50 100 200 400 600 800 1000 V 35 70 140 280 420 560 700 V 50 100 200 400 600 800 1000 V 8.0 IF(AV) 2.9 A Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rate load (JEDEC IFSM 200 A method) Maximum Forward Voltage @ 8.0A DC Drop per element @ 4.0A DC Maximum DC Reverse Current at rated DC blocking voltage @TJ =25°C @TJ =125°C I2t Rating for Fusing (t﹤8.3ms) Typical Junction Capacitance (Note 1) Typical Thermal Resistance (Note 2) Storage Temperature Operating Junction Temperature 1.1 VF 1.0 5.0 IR 500.0 I2t CJ R(JC) TSTG TJ Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc 2.Device mounted on 100mm x 100mm x 1.6mm Cu Plate Heatsink. - 39 - V μA 166 A2Sec 60 pF 2.0 °C/W -55 to +150 °C -55 to +150 °C RATING AND CHARACTERISTIC CURVES (GBJ8005 THRU GBJ810) FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE FIG.2-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 8.0 With Heatsink 6.0 INSTANEOUS FORWARD CURRENT,(A) AVERGE FORWARD RECTIFIED CURRENT,(A) 10 Single Phase Half Wave 60Hz Resistive or inductive Load 4.0 Without Heatsink 2.0 0 0 25 50 75 100 125 1.0 0.1 .01 150 TJ=25℃ Pulse Width=300μs 1% Duty Cycle 0.8 0.6 .4 1.0 1.2 CASE TEMPERTURE,( ℃) INSTANEOUS FORWARD VOLTAGE,(V) FIG.3-MAXIMUN NON-REPETITIVE FORWARD SURGE CURRENT FIG.4-TYPIAL JUNCTION CAPAOTANCE JUNCTION CAPACITANCE,(pF) 200 8.3ms Single Half Sine-Wave (JEDEC Method) 150 100 50 0 1 100 10 1 100 10 4 1 10 REVERSE VOLTAGE,(V) NUMBER OF CYCLES AT 60Hz FIG.5-TYPICAL REVERSE CHARACTERISTICS 1000 INSTANEOUS REVERSE CURRENT,( μA) PEAK FORWARD SURGE CURRENT,(A) 1000 TJ=150℃ 100 TJ=125℃ 10 TJ=100℃ 1.0 TJ=25℃ 0.1 0 20 40 60 80 100 120 PERCENT OF RATED PEAK REVERSE VOLTAGE,( %) - 40 - 100