AP2305GN
Pb Free Plating Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Small Package Outline
D
▼ Surface Mount Device
BVDSS
-20V
RDS(ON)
65mΩ
ID
- 4.2A
S
SOT-23
Description
G
D
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
, low on-resistance and cost-effectiveness.
G
S
The SOT-23 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
- 20
V
± 12
V
3
-4.2
A
3
-3.4
A
Continuous Drain Current
Continuous Drain Current
1,2
IDM
Pulsed Drain Current
-10
A
PD@TA=25℃
Total Power Dissipation
1.38
W
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Linear Derating Factor
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
90
℃/W
200509032
AP2305GN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
-20
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-
-0.1
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V, ID=-4.5A
-
-
53
mΩ
VGS=-4.5V, ID=-4.2A
-
-
65
mΩ
VGS=-2.5V, ID=-2.0A
-
-
100
mΩ
VGS=-1.8V, ID=-1.0A
-
-
250
mΩ
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-0.5
-
-
V
gfs
Forward Transconductance
VDS=-5V, ID=-2.8A
-
9
-
S
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=-20V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=55 C)
VDS=-16V, VGS=0V
-
-
-10
uA
Gate-Source Leakage
VGS= ± 12V
-
-
±100
nA
ID=-4.2A
-
10.6
-
nC
VGS(th)
o
IGSS
2
VGS=0V, ID=-250uA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-16V
-
2.32
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
3.68
-
nC
VDS=-15V
-
5.9
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-4.2A
-
3.6
-
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=-10V
-
32.4
-
ns
tf
Fall Time
RD=3.6Ω
-
2.6
-
ns
Ciss
Input Capacitance
VGS=0V
-
740
-
pF
Coss
Output Capacitance
VDS=-15V
-
167
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
126
-
pF
Source-Drain Diode
Min.
Typ.
VSD
Symbol
Forward On Voltage2
Parameter
IS=-1.2A, VGS=0V
Test Conditions
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-4.2A, VGS=0V,
-
27.7
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
22
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
Max. Units
AP2305GN
40
36
-5.0V
o
T A =25 C
28
30
-4.0V
-ID , Drain Current (A)
-ID , Drain Current (A)
-5.0V
TA=150oC
32
20
-3.0V
10
-4.0V
24
65mΩ
20
-3.0V
16
12
8
V G = -2.0V
V G = -2.0V
4
0
0
0
2
4
6
8
0
10
2
4
6
8
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
160
I D = -4.2A
V GS = -4.5V
I D =-4.2A
1.6
Normalized RDS(ON)
T A =25 o C
RDS(ON) (Ω )
120
80
1.4
1.2
1
0.8
0.6
40
0
1
2
3
4
5
-50
6
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
100
10
1
T j =25 o C
-VGS(th) (V)
-IS(A)
T j =150 o C
1
0.5
0.1
2.01E+08
0
0.01
0
0.4
0.8
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
T j , Junction Temperature (
100
o
150
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AP2305GN
f=1.0MHz
10000
12
I D = -4.2A
V DS = -16V
65mΩ
1000
8
Ciss
C (pF)
-VGS , Gate to Source Voltage (V)
10
6
Coss
100
4
Crss
2
0
10
0
5
10
15
20
25
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthja)
DUTY=0.5
10
-ID (A)
1ms
1
10ms
100ms
0.1
1s
o
T A =25 C
Single Pulse
DC
0.01
0.2
0.1
0.1
0.05
PDM
t
0.01
T
Duty factor = t/T
Peak T j = PDM x Rthja + Ta
0.01
Single Pulse
Rthja = 270℃
℃/W
0.001
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
Fig 10. Effective Transient Thermal Impedance
RD
VDS
D
VDS
0.8 x RATED VDS
G
G
S
S
-10 V
TO THE
OSCILLOSCOPE
D
TO THE
OSCILLOSCOPE
0.75 x RATED VDS
RG
VGS
VGS
-1~-3mA
IG
Fig 11. Switching Time Circuit
1000
t , Pulse Width (s)
ID
Fig 12. Gate Charge Circuit