ON NVD5890NT4G Power mosfet 40 v, 123 a, single nâ channel dpak Datasheet

NVD5890N
Power MOSFET
40 V, 123 A, Single N−Channel DPAK
Features
•
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
MSL 1/260°C
AEC Q101 Qualified and PPAP Capable
100% Avalanche Tested
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(on)
ID
40 V
3.7 mW @ 10 V
123 A
Applications
• Motor Drivers
• Pump Drivers for Automotive Braking, Steering and Other High
D
Current Systems
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
"20
V
ID
123
A
PD
107
Continuous Drain Current (RqJC)
TC = 25°C
Power Dissipation
(RqJC)
TC = 25°C
Continuous Drain Current (RqJA) (Note 1)
TC = 85°C
Steady
State
tp=10ms
Current Limited by Package
ID
18.5
4.0
W
TA = 25°C
IDM
400
A
TA = 25°C
IDmaxPkg
100
A
TJ, Tstg
−55 to
175
°C
IS
100
A
Drain to Source dV/dt
dV/dt
6.0
V/ns
Single Pulse Drain−to−Source Avalanche Energy (VDD = 32 V, VGS = 10 V,
L = 0.3 mH, IL(pk) = 40 A, RG = 25 W)
EAS
240
mJ
TL
260
°C
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
3
CASE 369C
DPAK
(Bent Lead)
STYLE 2
A
24
PD
Source Current (Body Diode)
1 2
W
TA = 25°C
Operating Junction and Storage Temperature
4
95
TA = 85°C
Power Dissipation
(RqJA) (Note 1)
Pulsed Drain Current
TA = 25°C
S
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
YWW
58
90NG
Parameter
N−Channel
G
2
1 Drain 3
Gate Source
Y
WW
5890N
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 1
1
Publication Order Number:
NVD5890N/D
NVD5890N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case (Drain)
Parameter
RqJC
1.4
°C/W
Junction−to−Ambient − Steady State (Note 1)
RqJA
37
Junction−to−Ambient − Steady State (Note 2)
RqJA
76
1. Surface−mounted on FR4 board using 650 mm2 pad size, 2 oz Cu.
2. Surface−mounted on FR4 board using 36 mm2 pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
40
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25°C
1.0
TJ = 150°C
100
IGSS
VDS = 0 V, VGS = "20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
"100
nA
3.5
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
1.5
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V, ID = 50 A
2.9
gFS
VDS = 15 V, ID = 15 A
16.8
S
4975
pF
Forward Transconductance
7.4
mV/°C
3.7
mW
CHARGES AND CAPACITANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VGS = 0 V, f = 1.0 MHz,
VDS = 12 V
785
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
4760
490
pF
580
385
Total Gate Charge
QG(TOT)
74
Threshold Gate Charge
QG(TH)
5.0
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
16
td(on)
14
VGS = 10 V, VDS = 15 V,
ID = 50 A
100
nC
17
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(off)
VGS = 10 V, VDS = 20 V,
ID = 50 A, RG = 2.0 W
tf
55
35
7.0
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
ns
NVD5890N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
V
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
VGS = 0 V,
IS = 50 A
TJ = 25°C
0.9
1.2
VGS = 0 V,
IS = 20 A
TJ = 25°C
0.8
1.0
tRR
ta
tb
35
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 50 A
QRR
20
15
40
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3
ns
nC
NVD5890N
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
10 V
6V
TJ = 25°C
7V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
TYPICAL PERFORMANCE CURVES
VGS = 5 V
4.5 V
4.2 V
4V
3.8 V
3.6 V
0
1
2
3
4
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
5
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
VDS ≥ 10 V
TJ = 25°C
TJ = 150°C
TJ = −55°C
2
3
4
5
VGS, GATE−TO−SOURCE VOLTAGE (V)
20
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
Figure 1. On−Region Characteristics
TJ = 25°C
18
16
14
ID = 50 A
12
10
8
6
4
2
0
3
4
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
20
16
14
12
VGS = 5 V
10
8
6
VGS = 10 V
4
2
0
40
0
80
120
160
200
240
280
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.0
1000
VGS = 0 V
VGS = 10 V
ID = 50 A
IDSS, LEAKAGE (mA)
RDS(on), NORMALIZED DRAIN−TO−SOURCE
RESISTANCE (mW)
TJ = 25°C
18
Figure 3. On−Resistance vs. Drain Current
1.75
6
1.5
1.25
1.0
100
TJ = 175°C
TJ = 150°C
10
0.75
0.5
−50
−25
0
25
50
75
100
125
150
175
1
0
TJ, JUNCTION TEMPERATURE (°C)
4
8
12
16
20
24
28
32
36
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
40
NVD5890N
C, CAPACITANCE (pF)
6000
VGS = 0 V
TJ = 25°C
f = 1 MHz
Ciss
5000
4000
3000
2000
Coss
1000
0
Crss
0
5
10
15
20
25
30
35
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
20
VGS, GATE−TO−SOURCE VOLTAGE (V)
7000
40
QT
QDS
QGS
VDS = 15 V
ID = 50 A
TJ = 25°C
10
30
20
40
50
60
70
5
0
80
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 7. Capacitance Variation
100
1000
VGS = 10 V
VDD = 20 V
ID = 50 A
IS, SOURCE CURRENT (A)
td(off)
tf
tr
100
td(on)
10
1
10
100
TJ = 150°C
10
100°C
1
0.1
0.3
0.4
0.5
25°C
0.6
0.7
TJ = −55°C
0.8
0.9
1.0
1.1
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
I D, DRAIN CURRENT (AMPS)
t, TIME (ns)
VGS
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1
15
VDS
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TYPICAL PERFORMANCE CURVES
10 ms
100
100 ms
10
1
0.1
VGS ≤ 20 V
SINGLE PULSE
TC = 25°C
1 ms
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
dc
10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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5
100
1.2
NVD5890N
r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (°C/W)
TYPICAL PERFORMANCE CURVES
10
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.000001
0.00001
RqJC = 1.4°C/W
Steady State
0.0001
0.001
0.01
t, TIME (s)
0.1
1
10
100
1000
Figure 12. Thermal Response
ORDERING INFORMATION
Order Number
NVD5890NT4G
Package
Shipping†
DPAK
(Pb−Free)
2500/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
NVD5890N
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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Sales Representative
NVD5890N/D
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