ON NLAS4684MR2G Ultra-low resistance dual spdt analog switch Datasheet

NLAS4684
Ultra-Low Resistance
Dual SPDT Analog Switch
The NLAS4684 is an advanced CMOS analog switch fabricated in
Sub−micron silicon gate CMOS technology. The device is a dual
Independent Single Pole Double Throw (SPDT) switch featuring
Ultra−Low RON of 0.5 , for the Normally Closed (NC) switch, and
0.8 for the Normally Opened switch (NO) at 2.7 V.
The part also features guaranteed Break Before Make switching,
assuring the switches never short the driver.
The NLAS4684 is available in a 2.0 x 1.5 mm bumped die array.
The pitch of the solder bumps is 0.5 mm for easy handling.
http://onsemi.com
MARKING
DIAGRAMS
Features
• Ultra−Low RON, t0.5 at 2.7 V
• Threshold Adjusted to Function with 1.8 V Control at
•
•
•
•
•
•
•
•
•
•
•
•
A1
Microbump−10
CASE 489AA
VCC = 2.7−3.3 V
Single Supply Operation from 1.8−5.5 V
Tiny 2 x 1.5 mm Bumped Die
Low Crosstalk, t 83 dB at 100 kHz
Full 0−VCC Signal Handling Capability
High Isolation, −65 dB at 100 kHz
Low Standby Current, t50 nA
Low Distortion, t0.14% THD
RON Flatness of 0.15 Pin for Pin Replacement for MAX4684
High Continuous Current Capability
$300 mA Through Each Switch
Large Current Clamping Diodes at Analog Inputs
$300 mA Continuous Current Capability
Pb−Free Packages are Available
1
1
DFN10
CASE 485C
NLAS
4684
ALYWG
G
1
Micro10
CASE 846B
4684
AYWG
G
A
= Assembly Location
L
= Wafer Lot
Y
= Year
WW, W = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
Applications
•
•
•
•
•
A1
4684
AYWWG
G
Cell Phone
Speaker Switching
Power Switching
Modems
Automotive
FUNCTION TABLE
IN 1, 2
NO 1, 2
NC 1, 2
0
1
OFF
ON
ON
OFF
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 11 of this data sheet.
© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 20
1
Publication Order Number:
NLAS4684/D
NLAS4684
GND
6
5 NC1
NC2
7
4 IN1
IN2
8
3 COM1
COM2
9
2 NO1
NO2 10
1 VCC
(Top View)
Figure 1. Pin Connections and Logic Diagram
(DFN10 and Micro10)
GND
B1
A1
NC2
C2
A2
IN2
COM1
C3
A3
COM2
NO1
C4
A4
NO2
NC1
C1
IN1
B4
VCC
(Top View)
Figure 2. Pin Connections and Logic Diagram
(Microbump−10)
http://onsemi.com
2
NLAS4684
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
*0.5 to )7.0
V
*0.5 v VIS v VCC )0.5
V
*0.5 v VI v)7.0
V
VCC
Positive DC Supply Voltage
VIS
Analog Input Voltage (VNO, VNC, or VCOM)
VIN
Digital Select Input Voltage
Ianl1
Continuous DC Current from COM to NC/NO
$300
mA
Ianl−pk 1
Peak Current from COM to NC/NO, 10 duty cycle (Note 1)
$500
mA
Iclmp
Continuous DC Current into COM/NO/NC
$300
mA
Iclmp 1
Peak Current into Input Clamp Diodes at COM/NC/NO
$500
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Defined as 10% ON, 90% off duty cycle.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
1.8
5.5
V
VCC
DC Supply Voltage
VIN
Digital Select Input Voltage
GND
5.5
V
VIS
Analog Input Voltage (NC, NO, COM)
GND
VCC
V
TA
Operating Temperature Range
*55
)125
°C
tr, tf
Input Rise or Fall Time, SELECT
0
0
100
20
ns/V
ESD
Human Body Model − All Pins
5
kV
VCC = 3.3 V $ 0.3 V
VCC = 5.0 V $ 0.5 V
DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Condition
VCC $10%
*555C to 255C
t855C
t1255C
Unit
VIH
Minimum High−Level Input
Voltage, Select Inputs
(Figure 9)
2.0
2.5
3.0
5.0
1.4
1.4
1.4
2.0
1.4
1.4
1.4
2.0
1.4
1.4
1.4
2.0
V
VIL
Maximum Low−Level Input
Voltage, Select Inputs
(Figure 9)
2.0
2.5
3.0
5.0
0.5
0.5
0.5
0.8
0.5
0.5
0.5
0.8
0.5
0.5
0.5
0.8
V
IIN
Maximum Input Leakage
Current, Select Inputs
VIN = 5.5 V or GND
5.5
$ 1.0
$ 1.0
$ 1.0
A
IOFF
Power Off Leakage Current
VIN = 5.5 V or GND
0
$10
$10
$10
A
ICC
Maximum Quiescent Supply
Current (Note 2)
Select and VIS = VCC or GND
5.5
$ 180
$ 200
$ 200
nA
2. Guaranteed by design.
http://onsemi.com
3
NLAS4684
DC ELECTRICAL CHARACTERISTICS − Analog Section
Guaranteed Maximum Limit
−555C to 255C
Symbol
Parameter
Condition
VCC $10%
Min
Max
t855C
Min
Max
t1255C
Min
Max
Unit
RON (NC)
NC “ON” Resistance
(Note 3)
VIN v VIL
VIS = GND to VCC
IINI v 100 mA
2.5
3.0
5.0
0.6
0.5
0.4
0.7
0.5
0.4
0.8
0.5
0.5
RON (NO)
NO “ON” Resistance
(Note 3)
VIN w VIH
VIS = GND to VCC
IINI v 100 mA
2.5
3.0
5.0
1.0
0.8
0.8
1.0
0.8
0.8
1.0
1.0
0.9
RFLAT (NC)
NC_On−Resistance
Flatness (Notes 3, 5)
ICOM = 100 mA
VIS = 0 to VCC
2.5
3.0
5.0
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
RFLAT (NO)
NO_On−Resistance
Flatness (Notes 3, 5)
ICOM = 100 mA
VIS = 0 to VCC
2.5
3.0
5.0
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
RON
On−Resistance Match
Between Channels
(Notes 3 and 4)
VIS = 1.3 V;
ICOM = 100 mA
VIS = 1.5 V;
ICOM = 100 mA
VIS = 2.8 V;
ICOM = 100 mA
2.5
0.18
0.18
0.18
3.0
0.06
0.06
0.06
5.0
0.06
0.06
0.06
INC(OFF)
INO(OFF)
NC or NO Off
Leakage Current
(Figure 13) (Note 3)
VIN = VIL or VIH
VNO or VNC = 1.0
VCOM = 4.5 V
5.5
−1
1
−10
10
−100
100
nA
ICOM(ON)
COM ON
Leakage Current
(Figure 13) (Note 3)
VIN = VIL or VIH
VNO 1.0 V or 4.5 V with
VNC floating or
VNC 1.0 V or 4.5 V with
VNO floating
VCOM = 1.0 V or 4.5 V
5.5
−2
2
−20
20
−200
200
nA
3. Guaranteed by design. Resistance measurements do not include test circuit or package resistance.
4. RON = RON(MAX) − RON(MIN) between NC1 and NC2 or between NO1 and NO2.
5. Flatness is defined as the difference between the maximum and minimum value of on−resistance as measured over the specified analog
signal ranges.
http://onsemi.com
4
NLAS4684
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) (Typical characteristics are at 25°C)
Guaranteed Maximum Limit
Symbol
Parameter
Test Conditions
VCC
(V)
VIS
(V)
*555C to 255C
Min
Typ
Max
t855C
Min
Max
t1255C
Min
Max
Unit
tON
Turn−On Time
RL = 50 CL = 35 pF
(Figures 4 and 5)
2.5
3.0
5.0
1.3
1.5
2.8
60
50
30
70
60
35
70
60
35
ns
tOFF
Turn−Off Time
RL = 50 CL = 35 pF
(Figures 4 and 5)
2.5
3.0
5.0
1.3
1.5
2.8
50
40
30
55
50
35
55
50
35
ns
tBBM
Minimum Break−Before−Make
Time (Note 6)
VIS = 3.0
RL = 300 CL = 35 pF
(Figure 3)
3.0
1.5
2
ns
15
Typical @ 25, VCC = 5.0 V
CNC Off
CNO Off
CNC On
CNO On
NC Off Capacitance, f = 1 MHz
NO Off Capacitance, f = 1 MHz
NC On Capacitance, f = 1 MHz
NO On Capacitance, f = 1 MHz
102
104
322
330
pF
ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)
Symbol
BW
VONL
VISO
Parameter
Condition
Maximum On−Channel −3dB
Bandwidth or Minimum Frequency
Response
VIN = 0 dBm
VIN centered between VCC and GND
(Figure 6)
Maximum Feed−through On Loss
Off−Channel Isolation (Note 7)
VCC
V
Typical
255C
Unit
MHz
NC
3.0
6.5
NO
3.0
9.5
VIN = 0 dBm @ 100 kHz to 50 MHz
VIN centered between VCC and GND (Figure 6)
3.0
−0.05
f = 100 kHz; VIS = 1 V RMS; CL = 5 nF
VIN centered between VCC and GND(Figure 6)
3.0
−65
dB
dB
Q
Charge Injection Select Input to
Common I/O (Figures 10 and 11)
VIN = VCC to GND, RIS = 0 , CL = 1 nF
Q = CL − VOUT (Figure 7)
3.0
15
pC
THD
Total Harmonic Distortion THD +
Noise (Figure 9)
FIS = 20 Hz to 100 kHz, RL = Rgen = 600 , CL = 50 pF
VIS = 1 V RMS
3.0
0.14
%
VCT
Channel−to−Channel Crosstalk
f = 100 kHz; VIS = 1 V RMS, CL = 5 pF, RL = 50 VIN centered between VCC and GND (Figure 6)
3.0
−83
dB
6. −55°C specifications are guaranteed by design.
7. Off−Channel Isolation = 20log10 (Vcom/Vno) (See Figure 6).
http://onsemi.com
5
NLAS4684
VCC
DUT
VCC
Input
Output
GND
VOUT
0.1 F
50 tBMM
35 pF
90%
90% of VOH
Output
Switch Select Pin
GND
Figure 3. tBBM (Time Break−Before−Make)
VCC
Input
DUT
VCC
0.1 F
50%
Output
VOUT
Open
50%
0V
50 VOH
90%
35 pF
90%
Output
VOL
Input
tON
tOFF
Figure 4. tON/tOFF
VCC
VCC
Input
DUT
Output
50%
0V
50 VOUT
Open
50%
VOH
35 pF
Output
Input
tOFF
Figure 5. tON/tOFF
http://onsemi.com
6
10%
10%
VOL
tON
NLAS4684
50 DUT
Reference
Transmitted
Input
Output
50 Generator
50 Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is
the bandwidth of an On switch. VISO, Bandwidth and VONL are independent of the input signal direction.
ǒVVOUT
Ǔ for VIN at 100 kHz
IN
VOUT
Ǔ for VIN at 100 kHz to 50 MHz
VONL = On Channel Loss = 20 Log ǒ
VIN
VISO = Off Channel Isolation = 20 Log
Bandwidth (BW) = the frequency 3 dB below VONL
VCT = Use VISO setup and test to all other switch analog input/outputs terminated with 50 Figure 6. Off Channel Isolation/On Channel Loss (BW)/Crosstalk
(On Channel to Off Channel)/VONL
DUT
VCC
VIN
Output
Open
GND
CL
Output
Off
On
VIN
Figure 7. Charge Injection: (Q)
10
THD (%)
1
NC1
0.1
NO1
0.01
1
10
100
1000
10000
100000
FREQUENCY (Hz)
Figure 8. Total Harmonic Distortion Plus Noise Versus Frequency
http://onsemi.com
7
Off
VOUT
NLAS4684
200
CHARGE INJECTION “Q” (pC)
THRESHOLD VOLTAGE (V)
1.6
1.4
Threshold Rising
1.2
1
Threshold Falling
0.8
0.6
0.4
0.2
0
0
2
4
NO, VCC = 5 V
0
NC, VCC = 5 V
−200
−400
−600
−800
0
6
2
VCC (V)
Figure 10. Charge Injection versus Vis
70
100
90
60
80
T−on 2.5 V
50
T−on / T−off (ns)
T−on / T−off (ns)
6
Vin (V)
Figure 9. Voltage in Threshold on Logic Pins
T−off 2.5 V
40
T−on 3.0 V
30
T−off 3.0 V
20
T−on 5.0 V
T−off 5.0 V
70
T−on
60
50
40
T−off
30
20
10
10
0
−55
−30
−5
20
45
70
95
0
1.8
120
TEMPERATURE (°C)
2.8
3.8
4.8
VCC TEMPERATURE (°C)
Figure 11. T−on / T−off Time versus
Temperature
Figure 12. T−on / T−off Time versus Temperature
1000
ICC CURRENT LEAKAGE (nA)
1000
NO/NC CURRENT LEAKAGE (nA)
4
100
Comm / Closed Switch
10
1
0.1
Open Switch
0.01
0.001
−55
−5
45
100
10
1
0.1
0.01
0.001
−55
95
−5
45
95
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 14. ICC Current Leakage versus
Temperature VCC = 5.5 V
Figure 13. NO/NC Current Leakage Off and On,
VCC = 5 V
http://onsemi.com
8
NLAS4684
3
1.8 V
2.5
2.5 V
1.5
2.3 V
1
2.7 V
0.5
0.0
1.0
2.5
2.5 V
3.0 V
5.0 V
0.5
2.0
3.0
4.0
0
0.0
5.0
1.0
2.0
4.0
5.0
Figure 16. NO On−Resistance versus
COM Voltage
1.3
0.45
VCC = 2.5 V
ICOM = 100 mA
+85°C
0.4
1.1
+25°C
VCC = 2.5 V
ICOM = 100 mA
+85°C
+25°C
0.9
0.3
RON ()
RON ()
3.0
VCOM (V)
Figure 15. NC On−Resistance versus
COM Voltage
0.25
0.7
−40°C
0.5
0.2
−40°C
0.3
0.15
0.1
0.0
5.0 V
1
VCOM (V)
0.35
2.7 V
2.3 V
2
1.5
3.0 V
TA = +25°C
ICOM = 100 mA
2.0 V
3
2.0 V
RON ()
RON ()
1.8 V
4
3.5
2
0
4.5
TA = +25°C
ICOM = 100 mA
0.5
1.0
1.5
2.0
0.1
2.5
0.0
1.0
2.0
VCOM (V)
3.0
4.0
5.0
VCOM (V)
Figure 17. NC On−Resistance versus
COM Voltage
Figure 18. NO On−Resistance versus
COM Voltage
0.35
0.9
+85°C +25°C
0.8
+85°C
AVERAGE RON ()
AVERAGE RON ()
0.3
+25°C
0.25
−40°C
0.2
0.15
0.1
0.0
VCC = 3 V
ICOM = 100 mA
0.7
0.5
0.4
0.3
0.2
1.0
2.0
0.1
0.0
3.0
−40°C
0.6
VCOM (V)
VCC = 3 V
ICOM = 100 mA
1.0
2.0
VCOM (V)
Figure 19. NC On−Resistance versus
COM Voltage
Figure 20. NC On−Resistance versus
COM Voltage
http://onsemi.com
9
3.0
0.26
0.9
0.24
0.8
−40°C
0.22
0.2
AVERAGE RON ()
+25°C
0.18
0.16
+85°C
0.14
0.12
VCC = 5 V
ICOM = 100 mA
+25°C
0.7
0.6
−40°C
0.5
0.4
0.3
VCC = 5 V
ICOM = 100 mA
0.2
0.1
0.0
0.1
0.0
+85°C
1.0
2.0
3.0
4.0
5.0
1.0
2.0
VCOM (V)
3.0
4.0
5.0
VCOM (V)
Figure 21. NC On−Resistance versus
COM Voltage
Figure 22. NO On−Resistance versus
COM Voltage
0
Bandwidth (On − Loss)
BANDWIDTH (dB/Div)
−1
PHASE (Degrees)
BANDWIDTH (dB/Div)
0
Bandwidth (On − Loss)
−1
10
0
Phase Shift
(Degrees)
−10
0.001
0.01
10
0
Phase Shift
(Degrees)
−10
VCC = 3.0 V
TA = 25°C
−10
VCC = 3.0 V
TA = 25°C
0.1
1.0
10
100
−10
0.001
0.01
FREQUENCY (MHz)
0.1
0
−10
−10
NC Off−Isolation
0.1
1.0
10
100
Figure 24. NO Bandwidth and Phase Shift
versus Frequency
0
0.01
1.0
FREQUENCY (MHz)
Figure 23. NC Bandwidth and Phase Shift
versus Frequency
−100
0.001
PHASE (Degrees)
AVERAGE RON ()
NLAS4684
NO Off−Isolation
Crosstalk
Crosstalk
VCC = 3.0 V
TA = 25°C
VCC = 3.0 V
TA = 25°C
10
−100
0.001
100
FREQUENCY (MHz)
0.01
0.1
1.0
10
FREQUENCY (MHz)
Figure 25. NC Off Isolation and Crosstalk
Figure 26. NO Off Isolation and Crosstalk
http://onsemi.com
10
100
NLAS4684
ORDERING INFORMATION
Device
Package
Shipping†
NLAS4684FCT1
Microbump−10
3000 / Tape & Reel
NLAS4684FCT1G
Microbump−10
(Pb−Free)
3000 / Tape & Reel
NLAS4684FCTCG
Microbump−10
(Pb−Free)
3000 / Tape & Reel
DFN10
3000 / Tape & Reel
DFN10
(Pb−Free)
3000 / Tape & Reel
Micro10
4000 / Tape & Reel
Micro10
(Pb−Free)
4000 / Tape & Reel
NLAS4684MNR2
NLAS4684MNR2G
NLAS4684MR2
NLAS4684MR2G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
11
NLAS4684
PACKAGE DIMENSIONS
Microbump−10
CASE 489AA−01
ISSUE A
D
4X
A
B
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION:
MILLIMETERS.
3. COPLANARITY APPLIES TO SPHERICAL
CROWNS OF SOLDER BALLS.
0.10 C
E
PIN ONE
CORNER
A1
0.10 C
A2
A
0.075 C
C
SEATING
PLANE
D1
e
10 X
b
0.15 C A B
0.05 C
C
E1
B
A
1
2
3
4
e
http://onsemi.com
12
MILLIMETERS
DIM MIN
MAX
A
−−− 0.650
A1 0.210 0.270
A2 0.280 0.380
D
1.965 BSC
E
1.465 BSC
b
0.250 0.350
e
0.500 BSC
D1
1.500 BSC
1.000 BSC
E1
NLAS4684
PACKAGE DIMENSIONS
DFN10, 3 x 3mm, 0.5mm Pitch
CASE 485C−01
ISSUE A
D
A
B
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
EDGE OF PACKAGE
L1
E
PIN 1
REFERENCE
2X
0.15 C
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.25 AND 0.30 MM FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
5. TERMINAL b MAY HAVE MOLD COMPOUND
MATERIAL ALONG SIDE EDGE. MOLD
FLASHING MAY NOT EXCEED 30 MICRONS
ONTO BOTTOM SURFACE OF TERMINAL b.
6. DETAILS A AND B SHOW OPTIONAL VIEWS
FOR END OF TERMINAL LEAD AT EDGE OF
PACKAGE.
DETAIL A
Bottom View
(Optional)
TOP VIEW
0.15 C
(A3)
DETAIL B
0.10 C
DIM
A
A1
A3
b
D
D2
E
E2
e
K
L
L1
A
10X
SEATING
PLANE
0.08 C
SIDE VIEW
A1
C
EXPOSED Cu
D2
10X
DETAIL A
e
L
1
MOLD CMPD
5
A1
10X
E2
K
ÉÉ
ÉÉ
MILLIMETERS
MIN
MAX
0.80
1.00
0.00
0.05
0.20 REF
0.18
0.30
3.00 BSC
2.45
2.55
3.00 BSC
1.75
1.85
0.50 BSC
0.19 TYP
0.35
0.45
0.00
0.03
A3
DETAIL B
Side View
(Optional)
SOLDERING FOOTPRINT*
10
10X
2.6016
b
0.10 C A B
0.05 C
6
BOTTOM VIEW
NOTE 3
2.1746
1.8508
3.3048
10X
0.5651
10X
0.3008
0.5000 PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
13
NLAS4684
PACKAGE DIMENSIONS
Micro10
CASE 846B−03
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION “A” DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH, PROTRUSIONS OR GATE
BURRS SHALL NOT EXCEED 0.15 (0.006)
PER SIDE.
4. DIMENSION “B” DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION
SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. 846B−01 OBSOLETE. NEW STANDARD
846B−02
−A−
−B−
K
D 8 PL
0.08 (0.003)
PIN 1 ID
G
0.038 (0.0015)
−T− SEATING
PLANE
M
T B
S
A
S
DIM
A
B
C
D
G
H
J
K
L
C
H
L
J
MILLIMETERS
MIN
MAX
2.90
3.10
2.90
3.10
0.95
1.10
0.20
0.30
0.50 BSC
0.05
0.15
0.10
0.21
4.75
5.05
0.40
0.70
INCHES
MIN
MAX
0.114
0.122
0.114
0.122
0.037
0.043
0.008
0.012
0.020 BSC
0.002
0.006
0.004
0.008
0.187
0.199
0.016
0.028
SOLDERING FOOTPRINT*
10X
1.04
0.041
0.32
0.0126
3.20
0.126
8X
10X
4.24
0.167
0.50
0.0196
SCALE 8:1
5.28
0.208
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
14
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NLAS4684/D
Similar pages