MOTOROLA MMSF3205 Single tmos power mosfet 11 amperes 20 volt Datasheet

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by MMSF3205/D
SEMICONDUCTOR TECHNICAL DATA
Medium Power Surface Mount Products
Motorola Preferred Device
MiniMOS devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process. These
miniature surface mount MOSFETs feature ultra low RDS(on) and true
logic level performance. They are capable of withstanding high energy in
the avalanche and commutation modes and the drain–to–source diode
has a very low reverse recovery time. MiniMOS devices are designed for
use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as
disk drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in designs where inductive loads are switched
and offer additional safety margin against unexpected voltage transients.
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SO–8 Surface Mount Package — Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
G
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for SO–8 Package Provided
DEVICE MARKING
S3205
SINGLE TMOS
POWER MOSFET
11 AMPERES
20 VOLTS
RDS(on) = 0.015 OHM

CASE 751–06, Style 12
SO–8
D
Source
1
8
Drain
Source
2
7
Drain
Source
3
6
Drain
Gate
4
5
Drain
S
Top View
ORDERING INFORMATION
Device
MMSF3205R2
Reel Size
Tape Width
Quantity
13″
12 mm embossed tape
4000 units
HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
TMOS
Motorola
Motorola, Inc.
1998 Power MOSFET Transistor Device Data
1
MMSF3205
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Negative sign for P–Channel devices omitted for clarity
Rating
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage — Continuous
1 inch SQ.
FR–4 or G–10 PCB
10 seconds
Minimum
FR–4 or G–10 PCB
10 seconds
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (1)
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (1)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 4.5 Vdc, Peak IL = 11 Apk, L = TBD mH, RG = 25 W)
Symbol
Max
Unit
VDSS
VDGR
20
V
20
V
VGS
RTHJA
PD
± 12
V
50
2.5
20
11
8.0
55
°C/W
Watts
mW/°C
A
A
A
80
1.56
12.5
8.6
6.4
43
°C/W
Watts
mW/°C
A
A
A
– 55 to 150
°C
ID
ID
IDM
RTHJA
PD
ID
ID
IDM
TJ, Tstg
EAS
mJ
TBD
(1) Repetitive rating; pulse width limited by maximum junction temperature.
2
Motorola TMOS Power MOSFET Transistor Device Data
MMSF3205
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
20
—
—
TBD
—
—
—
—
—
—
1.0
5.0
—
—
100
0.6
—
—
—
—
—
—
—
TBD
TBD
15
25
20
—
—
gFS
40
TBD
—
Mhos
pF
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 70°C)
IDSS
Gate–Body Leakage Current (VGS = ± 12 Vdc, VDS = 0)
IGSS
Vdc
mV/°C
µAdc
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 11 Adc)
(VGS = 2.5 Vdc, ID = 8.6 Adc)
RDS(on)
On–State Drain Current
(VDS ≤ 5.0 V, VGS = 4.5 V)
Vdc
mΩ
ID(on)
Forward Transconductance (VDS = 10 Vdc, ID = 11 Adc)
mV/°C
A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 16 Vdc,
Vdc VGS = 0 Vdc,
Vdc
f = 1.0 MHz)
Transfer Capacitance
Ciss
—
TBD
TBD
Coss
—
TBD
TBD
Crss
—
TBD
TBD
td(on)
—
TBD
TBD
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
(VDD = 10 Vdc,
Vd ID = 1.0
1 0 Adc,
Ad
VGS = 4.5
4 5 Vdc,
Vdc
RG = 6.0 Ω)) ((1))
Fall Time
Gate Charge
See Figure 8
((VDS = 10 Vdc,
Vd , ID = 11 Adc,
Ad ,
VGS = 4.5 Vdc) (1)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(1)
(IS = 2.1 Adc, VGS = 0 Vdc) (1)
(IS = 2.1 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
See Figure 15
((IS = 2
2.1
1 Adc,
Ad , VGS = 0 Vdc,
Vd ,
dIS/dt = 100 A/µs) (1)
Reverse Recovery Stored Charge
tr
—
TBD
TBD
td(off)
—
TBD
TBD
tf
—
TBD
TBD
QT
—
TBD
TBD
Q1
—
TBD
—
Q2
—
TBD
—
Q3
—
TBD
—
—
—
TBD
TBD
1.2
—
trr
—
TBD
TBD
ta
—
TBD
—
tb
—
TBD
—
QRR
—
TBD
—
VSD
ns
nC
Vdc
ns
µC
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
Max limit – Typ
Cpk =
3 x SIGMA
(4) Repetitive rating; pulse width limited by maximum junction temperature.
Motorola TMOS Power MOSFET Transistor Device Data
3
MMSF3205
INFORMATION FOR USING THE SO–8 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must be
the correct size to ensure proper solder connection interface
between the board and the package. With the correct pad
geometry, the packages will self–align when subjected to a
solder reflow process.
0.060
1.52
0.275
7.0
0.155
4.0
0.024
0.6
0.050
1.270
inches
mm
SO–8 POWER DISSIPATION
The power dissipation of the SO–8 is a function of the input
pad size. This can vary from the minimum pad size for
soldering to the pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, RθJA, the thermal resistance from the
device junction to ambient; and the operating temperature, TA.
Using the values provided on the data sheet for the SO–8
package, PD can be calculated as follows:
PD =
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this case
is 1.6 Watts.
PD =
150°C – 25°C
= 1.6 Watts
80°C/W
The 80°C/W for the SO–8 package assumes the
recommended footprint on a glass epoxy printed circuit board
to achieve a power dissipation of 1.6 Watts using the footprint
shown. Another alternative would be to use a ceramic
substrate or an aluminum core board such as Thermal Clad.
Using board material such as Thermal Clad, the power
dissipation can be doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and soldering
should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
4
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the maximum
temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should be
allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
Motorola TMOS Power MOSFET Transistor Device Data
MMSF3205
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of control
settings that will give the desired heat pattern. The operator
must set temperatures for several heating zones and a figure
for belt speed. Taken together, these control settings make up
a heating “profile” for that particular circuit board. On
machines controlled by a computer, the computer remembers
these profiles from one operating session to the next. Figure
1 shows a typical heating profile for use when soldering a
surface mount device to a printed circuit board. This profile will
vary among soldering systems, but it is a good starting point.
Factors that can affect the profile include the type of soldering
system in use, density and types of components on the board,
type of solder used, and the type of board or substrate material
being used. This profile shows temperature versus time. The
STEP 1
PREHEAT
ZONE 1
“RAMP”
200°C
STEP 2
STEP 3
VENT
HEATING
“SOAK” ZONES 2 & 5
“RAMP”
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
line on the graph shows the actual temperature that might be
experienced on the surface of a test board at or near a central
solder joint. The two profiles are based on a high density and
a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this
profile. The type of solder used was 62/36/2 Tin Lead Silver
with a melting point between 177 –189°C. When this type of
furnace is used for solder reflow work, the circuit boards and
solder joints tend to heat first. The components on the board
are then heated by conduction. The circuit board, because it
has a large surface area, absorbs the thermal energy more
efficiently, then distributes this energy to the components.
Because of this effect, the main body of a component may be
up to 30 degrees cooler than the adjacent solder joints.
STEP 6
VENT
STEP 5
STEP 4
HEATING
HEATING
ZONES 3 & 6 ZONES 4 & 7
“SPIKE”
“SOAK”
170°C
STEP 7
COOLING
205° TO 219°C
PEAK AT
SOLDER JOINT
160°C
150°C
150°C
100°C
140°C
100°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
50°C
TIME (3 TO 7 MINUTES TOTAL)
TMAX
Figure 1. Typical Solder Heating Profile
Motorola TMOS Power MOSFET Transistor Device Data
5
MMSF3205
PACKAGE DIMENSIONS
D
A
8
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. DIMENSIONS ARE IN MILLIMETER.
3. DIMENSION D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE B DIMENSION AT MAXIMUM MATERIAL
CONDITION.
C
5
0.25
H
E
M
B
M
1
4
h
B
X 45 _
e
q
A
C
SEATING
PLANE
L
0.10
A1
B
0.25
M
C B
S
A
S
DIM
A
A1
B
C
D
E
e
H
h
L
q
CASE 751–06
SO–8
ISSUE T
MILLIMETERS
MIN
MAX
1.35
1.75
0.10
0.25
0.35
0.49
0.19
0.25
4.80
5.00
3.80
4.00
1.27 BSC
5.80
6.20
0.25
0.50
0.40
1.25
0_
7_
STYLE 12:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
SOURCE
SOURCE
SOURCE
GATE
DRAIN
DRAIN
DRAIN
DRAIN
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6
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MMSF3205/D
Motorola TMOS Power MOSFET Transistor Device
Data
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