Anpec APM4429KTU-CK P-channel enhancement mode mosfet Datasheet

APM4429
P-Channel Enhancement Mode MOSFET
Features
•
Pin Description
-30V/-13A, RDS(ON) = 8mΩ(typ.) @ VGS = -20V
5
RDS(ON) = 9mΩ(typ.) @ VGS = -10V
RDS(ON) =13mΩ(typ.) @ VGS = -4.5V
•
•
•
5
Super High Density Cell Design
&
,
%
,
5
!
$
,
/
"
#
,
Reliable and Rugged
SO − 8
SO-8 Package
S
S S
Applications
•
Power Management in Notebook Computer,
G
Portable Equipment and Battery Powered
Systems
Ordering and Marking Information
L e a d F re e C o d e
H a n d lin g C o d e
Tem p. R ange
P ackage C ode
APM 4429
XXXXX
X X X X X - D a te C o d e
Absolute Maximum Ratings
Symbol
P-Channel MOSFET
P ackage C ode
K : S O -8
O p e ra tio n J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0 °C
H a n d lin g C o d e
TU : Tube
TR : Tape & Reel
L e a d F re e C o d e
L : L e a d F re e D e v ic e
B la n d : O rg in a l D e v ic e
APM 4429
APM 4429 K :
D D D D
(TA = 25°C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
-30
VGSS
Gate-Source Voltage
±20
*
ID
Maximum Drain Current – Continuous
IDM
Maximum Drain Current – Pulsed
TA = 25°C
-13
-50
Unit
V
A
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003
1
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APM4429
Absolute Maximum Ratings
Symbol
PD
TJ)TSTG
*
RθJA
Parameter
Rating
Maximum Power Dissipation
TA = 25°C
2.5
TA = 100°C
1.0
Maximum Operating and Storage Junction Temperature
P aram eter
Unit
W
-55 to 150
°C
62.5
°C/W
Thermal Resistance - Junction to Ambient
Electrical Characteristics
S ym b o l
(TA = 25°C unless otherwise noted)
(TA = 25°C unless otherwise noted)
Test C o n d itio n
AP M 44 29
Typ = .
M ax.
M in .
U n it
S tatic
B V DSS
ID S S
V G S (th)
IG S S
R D S (O N )
V SD
D rain-S ource B reak dow n
Voltage
Z ero G ate Voltage D rain
C urren t
G ate T hreshold Volta ge
V D S =V G S , I D S =-250 µA
G ate Le ak age C urren t
V G S =±20V , V D S =0V
D rain-S ource O n-state
R esista nce
>
D iode F orw ard Voltag e
V G S =0V , I D S =-250 µA
V D S =-24V , V G S =0V
-1
-1
-1.5
11
9
12
13
17
-0.7
-1.3
135
Qg
Total G ate C harge
V D S =-15V , V G S = -10V
105
Q gs
G ate-S ource C harge
l D = -13A
10.8
Q gd
G ate-D rain C harge
t d (O N )
Turn-on D ela y Tim e
Tr
Turn-on R ise Tim e
Turn-off D ela y Tim e
V D D =-15V , I D =-1A ,
V G E N =-10V , R G =6 Ω
R L =15Ω
Tf
Turn-off F all Tim e
Input C apacitance
V G S =0V
C o ss
O utput C apacitance
V D S =-25V
C rss
R evers e Transfer C a pacitance F requen cy=1.0M H z
b
mΩ
V
nC
13.6
C iss
Notes
a
±100
8
D yn am ic =
t d (O F F )
V
nA
V G S =-10V , I D S =-13A
I S D =-3A , V G S =0V
µA
-2
V G S =-20V , I D S =-13A
V G S =-4.5V , I D =-12A
>
V
-30
15
30
20
30
55
85
40
65
ns
4730
800
pF
240
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
: Guaranteed by design, not subject to production testing
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003
2
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APM4429
Typical Characteristics
Output Characteristics
50
Transfer Characteristics
50
40
-VGS=3V
30
20
-VGS=2.5V
10
30
o
Tj=125 C
20
-ID-Drain Current (A)
40
-ID-Drain Current (A)
-VGS= 4,5,6,7,8,9,10V
o
Tj=25 C
10
o
0
Tj=-55 C
-VGS=2V
0
2
4
6
8
0
10
-VDS - Drain-to-Source Voltage (V)
0
1
Threshold Voltage vs. Junction Temperature
RDS(on)-On-Resistance
(Ω)
1.00
-VGS(th)-Threshold Voltage (V)
(Normalized)
-IDS =250µA
1.25
0.50
0.25
0.00
-50
-25
0
25
50
75
0.025
0.020
-VGS=4.5V
0.015
-VGS=10V
0.010
-VGS=20V
0.005
0.000
100 125 150
Tj - Junction Temperature (°C)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003
4
0.030
1.50
0.75
3
On-Resistance vs. Drain Current
1.75
2
-VGS - Gate-to-Source Voltage (V)
0
20
40
60
80
100
-ID - Drain Current (A)
3
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APM4429
Typical Characteristics
On-Resistance vs. Gate-to-Source
Voltage
0.04
0.02
0
5
10
15
-VGS = 10V
-ID = 13A
1.50
1.25
RDS(on)-On-Resistance (Ω)
(Normalized)
-ID= 13A
0.06
0.00
1.75
RDS(on)-On-Resistance
(Ω)
0.08
On-Resistance vs. Junction Temperature
1.00
0.75
0.50
-50
20
-25
10
7000
-VDS= 15 V
-ID= 13 A
75
Frequency=1MHz
4
2
Ciss
5000
4000
3000
6
2000
Coss
1000
0
30
100 125 150
6000
Capacitance (pF)
-VGS-Gate-Source Voltage (V)
50
Capacitance
Gate Charge
0
25
(°C)
TJ - Junction Temperature
-VGS - Gate-to-Source Voltage (V)
8
0
60
90
0
120
QG - Gate Charge (nC)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003
Crss
0
5
10
15
20
25
30
-VDS - Drain-to-Source Voltage (V)
4
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APM4429
Typical Characteristics
Source-Drain Diode Forward Voltage
50
120
o
90
Power (W)
Tj=150 C
o
Tj=25 C
1
60
10
-IS-Source Current (A)
Single Pulse Power
30
0.1
0.0
0.4
0.8
1.2
1.6
0
0.01
2.0
0.1
1
-VSD-Source-to-Drain Voltage (V )
10
30
Time (sec)
Normalized Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle=0.5
0.1
D=0.2
D=0.1
0.01
Normalized Effective Transient
Thermal Impedance
2
D=0.05
1.Duty Cycle, D= t1/t2
o
2.Per Unit Base=RthJA=62.5 C/W
3.TJM-TA=PDMZthJA
4.Surface Mounted
D=0.02
SINGLE PULSE
1E-3
1E-4
1E-3
0.01
0.1
1
10
30
Square Wave Pulse Duration (sec)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003
5
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APM4429
Packaging Information
E
e1
0.015X45
SOP-8 pin ( Reference JEDEC Registration MS-012)
H
e2
D
A1
A
1
L
0.004max.
Dim
Mi ll im et er s
Inche s
A
Min.
1. 35
Max .
1. 75
Min.
0. 053
Max .
0. 069
A1
D
E
0. 10
4. 80
3. 80
0. 25
5. 00
4. 00
0. 004
0. 189
0. 150
0. 010
0. 197
0. 157
H
L
e1
e2
5. 80
0. 40
0. 33
6. 20
1. 27
0. 51
0. 228
0. 016
0. 013
0. 244
0. 050
0. 020
φ 1
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003
1. 27BSC
0. 50BSC
8°
8°
6
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APM4429
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
(IR/Convection or VPR Reflow)
temperature
Reflow Condition
Peak temperature
183°C
Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/
Convection
Average ramp-up rate(183°C to Peak)
3°C/second max.
120 seconds max
Preheat temperature 125 ± 25°C)
60 – 150 seconds
Temperature maintained above 183°C
Time within 5°C of actual peak temperature 10 –20 seconds
Peak temperature range
220 +5/-0°C or 235 +5/-0°C
Ramp-down rate
6 °C /second max.
6 minutes max.
Time 25°C to peak temperature
VPR
10 °C /second max.
60 seconds
215-219°C or 235 +5/-0°C
10 °C /second max.
Package Reflow Conditions
pkg. thickness ≥ 2.5mm
and all bgas
Convection 220 +5/-0 °C
VPR 215-219 °C
IR/Convection 220 +5/-0 °C
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003
7
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 235 +5/-0 °C
VPR 235 +5/-0 °C
IR/Convection 235 +5/-0 °C
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APM4429
Reliability test program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
D
P
Po
E
t
P1
Bo
F
W
Ao
D1
Ko
T2
J
C
A
B
T1
Application
SOP- 8
A
B
330 ± 1
F
5.5± 1
J
T1
T2
W
P
E
62 +1.5
C
12.75+
0.15
2 ± 0.5
12.4 ± 0.2
2 ± 0.2
12± 0. 3
8± 0.1
1.75±0.1
D
D1
Po
P1
Ao
Bo
Ko
t
1.55 +0.1 1.55+ 0.25 4.0 ± 0.1
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003
2.0 ± 0.1 6.4 ± 0.1
8
5.2± 0. 1
2.1± 0.1 0.3±0.013
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APM4429
Cover Tape Dimensions
Application
SOP- 8
Carrier Width
12
Cover Tape Width
9.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003
9
www.anpec.com.tw
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