HiPerFETTM Power MOSFETs VDSS IXFH/IXFT 68N20 IXFH/IXFT 74N20 RDS(on) 200 V 68 A 35 mW 200 V 74 A 30 mW trr £ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Maximum Ratings ID25 Symbol Test Conditions VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 200 V VGS Continuous ±20 V VGSM Transient ±30 V I D25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM I AR TC = 25°C 68 74 272 296 68 74 A A A A A A 45 mJ 5 V/ns 360 W Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) EAR TC = 25°C dv/dt I S £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W PD TC = 25°C 68N20 74N20 68N20 74N20 68N20 74N20 -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ TL 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque 1.13/10 Nm/lb.in. Weight 6 g TO-247 AD (IXFH) (TAB) TO-268 (D3) ( IXFT) G (TAB) S G = Gate, S = Source, D = Drain, TAB = Drain rated package inductance - easy to drive and to protect Fast intrinsic Rectifier Low Applications Symbol Test Conditions VDSS VGS = 0 V, ID = 1 mA 200 VGS(th) VDS = VGS, ID = 4 mA 2 I GSS VGS = ±20 VDC, VDS = 0 I DSS VDS = 0.8 VDSS VGS = 0 V RDS(on) VGS= 10 V, I D = 0.5 ID25 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 25°C TJ = 125°C 74N20 68N20 Pulse test, t £ 300 ms, duty cycle d £ 2 % © 2000 IXYS All rights reserved V DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Low voltage relays 4 V ±100 nA 200 1 mA mA Advantages 30 35 mW mW Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) High power surface package High power density 97522C (8/00) IXFH 68N20 IXFH 74N20 IXFT 68N20 IXFT 74N20 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs VDS = 10 V; ID = 0.5 ID25, pulse test Ciss Coss Crss VGS = 0 V, VDS = 25 V, f = 1 MHz td(on) tr td(off) tf 35 45 S 5400 1160 560 pF pF pF VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 2 W (External) 40 55 120 26 ns ns ns ns Qg(on) Qgs Qgd VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 280 39 135 nC nC nC RthJC RthCK (TO-247 Package) 0.25 0.35 K/W K/W IXFH68N20 & IXFH74N80 characteristic curves can be found in the IXFK72N20/ IXFK80N20 data sheet. Source-Drain Diode Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 68N20 74N20 68 74 A A ISM Repetitive; pulse width limited by TJM 68N20 74N20 272 296 A A VSD I F = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V 200 ns t rr QRM IRM I F = 25A -di/dt = 100 A/ms, VR = 100 V 0.85 8 TO-247 AD (IXFH) Outline 1 2 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain 3 Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ÆP 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline mC A Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025