AP9992GR-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free BVDSS 60V RDS(ON) 3.5mΩ ID G 165A S Description Advanced Power MOSFETs fromfrom APEC provide the designer with the The Advanced Power MOSFETs APEC provide the best combination of fast switching, ruggedized device design, low ondesigner with the best combination of fast switching, resistance and cost-effectiveness. ruggedized device design, low on-resistance and cost-effectiveness. G D The TO-262 package is widely preferred for commercial-industrial power applications and suited for low voltage applications such as DC/DC converters. S TO-262(R) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Continuous Drain Current (Chip) 165 A 120 A 105 A 300 A ID@TC=25℃ Continuous Drain Current, V GS @ 10V ID@TC=100℃ Continuous Drain Current, V GS @ 10V 3 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation 166 W PD@TA=25℃ Total Power Dissipation 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Units 0.75 ℃/W 62 ℃/W 1 201207171 AP9992GR-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 60 - - V RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=40A - - 3.5 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 5 V gfs Forward Transconductance VDS=10V, ID=40A - 80 - S IDSS Drain-Source Leakage Current VDS=48V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=40A - 135 216 nC Qgs Gate-Source Charge VDS=48V - 21 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 75 - nC td(on) Turn-on Delay Time VDS=30V - 28 - ns tr Rise Time ID=40A - 115 - ns td(off) Turn-off Delay Time RG=3.3Ω - 55 - ns tf Fall Time VGS=10V - 100 - ns Ciss Input Capacitance VGS=0V - 5500 8800 pF Coss Output Capacitance VDS=25V - 930 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 670 - pF Rg Gate Resistance f=1.0MHz - 2 4 Ω Min. Typ. IS=40A, VGS=0V - - 1.3 V Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=10A, VGS=0V, - 60 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 130 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is 120A. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9992GR-HF 300 160 ID , Drain Current (A) 250 ID , Drain Current (A) T C =150 o C 10V 9.0V 8.0V o T C =25 C 7.0V 200 150 V G = 6.0V 100 10V 9.0V 8.0V 7.0V V G =6.0V 120 80 40 50 0 0 0 4 8 12 16 20 24 0 2 Fig 1. Typical Output Characteristics 6 8 10 12 Fig 2. Typical Output Characteristics 2.0 1.2 I D =40A V G =10V Normalized RDS(ON) I D =1mA Normalized BVDSS (V) 4 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) 1.1 1 1.6 1.2 0.8 0.9 0.4 0.8 -50 0 50 100 -50 150 0 50 100 150 T j , Junction Temperature ( o C) T j , Junction Temperature ( o C) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance v.s. Junction Temperature Temperature 2.0 40 I D =250uA 1.6 T j =150 o C Normalized VGS(th) IS(A) 30 T j =25 o C 20 1.2 0.8 10 0.4 0.0 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9992GR-HF f=1.0MHz 12 8000 I D =40A V DS =48V 6000 C iss 8 C (pF) VGS , Gate to Source Voltage (V) 10 6 4000 4 2000 C oss C rss 2 0 0 0 40 80 120 1 160 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 1000 Normalized Thermal Response (Rthjc) Duty factor = 0.5 Operation in this area limited by RDS(ON) 100us ID (A) 100 1ms 10 10ms 100ms DC T C =25 o C Single Pulse 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty Factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 1 0.01 0.1 1 10 100 1000 0.00001 0.0001 V DS ,Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4